公开(公告)号：US20120139079A1

公开(公告)日：2012-06-07

申请号：US13296832

申请日：2011-11-15

申请人： Norihito TOKURA ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Shinya Sakurai ,  Takashi Suzuki

发明人： Norihito TOKURA ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Shinya Sakurai ,  Takashi Suzuki

IPC分类号： H01L29/47

CPC分类号： H01L21/76283 ,  H01L27/0814 ,  H01L27/1203 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/08 ,  H01L29/405 ,  H01L29/8611

摘要： A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.

摘要翻译： 二极管在半导体层的表面上具有半导体层和阴极和阳极电极。 半导体层具有分别与阴极和阳极电极接触的阴极和阳极区域。 阳极区域具有表面浓度高的第一扩散区域，具有中间表面浓度的第二扩散区域和具有低表面浓度的第三扩散区域。 第一扩散区被第二和第三扩散区覆盖。 第二扩散区域具有面对阴极区域的第一侧表面，与阴极区域相对的第二侧表面和在第一和第二侧表面之间延伸的底表面。 第三扩散区域覆盖连接第一侧表面与底表面的第一角部和将第二侧表面与底表面连接的第二角部中的至少一个。

公开(公告)号：US20110210766A1

公开(公告)日：2011-09-01

申请号：US13105021

申请日：2011-05-11

申请人： Takaaki AOKI ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki AOKI ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03B1/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20110073904A1

公开(公告)日：2011-03-31

申请号：US12923469

申请日：2010-09-23

申请人： Youichi Ashida ,  Norihito Tokura ,  Shigeki Takahashi ,  Yoshiaki Nakayama ,  Satoshi Shiraki ,  Kouji Senda

发明人： Youichi Ashida ,  Norihito Tokura ,  Shigeki Takahashi ,  Yoshiaki Nakayama ,  Satoshi Shiraki ,  Kouji Senda

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/78 ,  H01L21/762

CPC分类号： H01L27/1203 ,  H01L21/76264 ,  H01L21/84 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66128 ,  H01L29/7394 ,  H01L29/7824 ,  H01L29/8611

摘要： A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.

摘要翻译： 半导体器件包括：SOI衬底; 半导体元件，其具有设置在所述SOI衬底的有源层中的第一和第二杂质层，所述第二杂质层围绕所述第一杂质层; 以及设置在与SOI衬底的嵌入式绝缘膜相邻的有源层的一部分中的多个第一和第二导电类型区域。 交替地布置第一和第二导电类型区域。 第一和第二导电类型区域具有对应于半导体元件的布局。

公开(公告)号：US07893458B2

公开(公告)日：2011-02-22

申请号：US11892819

申请日：2007-08-28

申请人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H01L29/74 ,  H01L29/76

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.

摘要翻译： 半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。 晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。 该设备具有最小的尺寸和高切换速度。 此外，改善了开关损耗和浪涌电压两者。

公开(公告)号：US20090233565A1

公开(公告)日：2009-09-17

申请号：US12382139

申请日：2009-03-10

申请人： Youichirou Suzki ,  Noboru Maeda ,  Takahisa Koyasu ,  Koji Kondo ,  Shigeki Takahashi

发明人： Youichirou Suzki ,  Noboru Maeda ,  Takahisa Koyasu ,  Koji Kondo ,  Shigeki Takahashi

IPC分类号： H04B7/00

CPC分类号： H04L25/12 ,  H04L25/0272 ,  H04L25/0278 ,  H04L25/0294

摘要： A receiving device is provided capable of avoiding reception of unnecessary energy when a signal waveform actually changes on a receiving side. An impedance control circuit includes a sensing unit to sense one or more of a voltage, current, or power of a signal to be received by a receiving circuit. The impedance control unit varies an input impedance according to the change in the sensed one or more quantities so that the received signal will be reflected. Thus the excess energy of the signal is reflected and fed to any other receiving circuit achieving stable communications.

摘要翻译： 提供一种接收装置，其能够在信号波形在接收侧实际改变时避免接收不必要的能量。 阻抗控制电路包括感测单元，用于感测由接收电路接收的信号的电压，电流或功率中的一个或多个。 阻抗控制单元根据感测的一个或多个量的变化来改变输入阻抗，使得接收到的信号将被反射。 因此，信号的过剩能量被反射并馈送到实现稳定通信的任何其它接收电路。

公开(公告)号：US07059847B2

公开(公告)日：2006-06-13

申请号：US10485754

申请日：2003-07-15

申请人： Takeshi Takeda ,  Shigeki Takahashi ,  Kunihito Seta ,  Nihei Kaishita

发明人： Takeshi Takeda ,  Shigeki Takahashi ,  Kunihito Seta ,  Nihei Kaishita

IPC分类号： B29C45/32

CPC分类号： B29C45/1759 ,  B29C45/14655

摘要： To provide a resin molding machine that can reduce cost by eliminating the need for a residual-material remover, and can reduce cycle time and the amount of residual material, the resin molding machine includes a stationary cavity plate that has a gate communicating with a cavity, a sprue bushing in which a sprue is formed for feeding a molding material through the gate into the cavity, a runner plate disposed between the stationary cavity plate 13 and the sprue bushing, a cylinder unit (runner-plate driving mechanism) for rectilinearly reciprocating the runner plate between ejecting positions and via a molding position, the ejecting positions being separated from the molding position A and provided for ejecting the residual material, and an ejecting channel (residual-material ejecting mechanism) for ejecting the residual material at the ejecting positions.

摘要翻译： 为了提供能够通过不需要残留材料去除剂来降低成本的树脂成型机，并且可以减少周期时间和剩余材料的量，树脂成型机包括具有与腔连通的门的固定腔板 浇口套管，其中形成有用于将成型材料通过浇口进入空腔的浇道;设置在固定腔板13和浇口衬套之间的流道板，用于直线往复运动的缸单元（流道板驱动机构） 排出位置之间的流道板和模制位置，排出位置与模制位置A分离并被设置用于喷射剩余材料，以及用于将残留材料排出在排出位置的排出通道（残留材料排出机构） 。

公开(公告)号：US07056111B2

公开(公告)日：2006-06-06

申请号：US10000012

申请日：2001-12-04

申请人： Makoto Kitamura ,  Yoshio Oda ,  Shigeki Takahashi

发明人： Makoto Kitamura ,  Yoshio Oda ,  Shigeki Takahashi

IPC分类号： B29C43/08

CPC分类号： B30B11/10 ,  B28B3/021 ,  B28B3/08 ,  B28B3/083 ,  B28B5/08 ,  B29C43/08 ,  B30B11/04

摘要： A dry forming apparatus includes a carrying table (mold-transfer mechanism) which transfers a mold containing a die and punch units at least between a powder supply stage, a pressing stage, and a formed-product removing stage, a pressing driving mechanism which drives the punch units for pressing in the pressing stage, a connecting mechanism which connects punch units to the pressing driving mechanism when the mold is transferred to the pressing stage, and releases the connection of the punch units, and a unit holding mechanism which holds the punch units while the units are transferred to the next stage.

公开(公告)号：US20050026480A1

公开(公告)日：2005-02-03

申请号：US10729900

申请日：2003-12-09

申请人： Masayasu Fujii ,  Toshiki Hayashi ,  Toshikazu Sakurai ,  Shigeki Takahashi

发明人： Masayasu Fujii ,  Toshiki Hayashi ,  Toshikazu Sakurai ,  Shigeki Takahashi

IPC分类号： H01R13/652 ,  H01R13/645 ,  H01R13/648 ,  H01R31/08 ,  H01R4/66

CPC分类号： H01R13/648 ,  H01R13/6456

摘要： Four fitting recessed portions 15A to 15D are provided in a connector housing 11, and four separate mating connectors in which ground wires are introduced, respectively, are allowed to be fitted into the fitting recessed portions so provided, respectively. A ground terminal 20 is formed by folding an elongate bus bar 21 in a plurality of stages, and each stage is formed into a configuration in which a plurality of tabs 23 are provided in a straight line along one or both edges of the bus bar 21. The ground terminal 20 is installed with tabs 23 being arranged so as to face the respective fitting recessed portions 15A to 15D and an ground plate 25 being made to protrude outwardly.

摘要翻译： 四个嵌合凹部15A至15D设置在连接器壳体11中，并且分别将接地线分别插入其中的四个单独的配合连接器分别装配到如此设置的配件凹部中。 接地端子20通过以多级折叠细长母线21而形成，并且每个级形成为其中多个突片23沿着母线21的一个或两个边缘沿直线设置的构造 接地端子20安装有突出部23，其布置成面向相应的嵌合凹部15A至15D以及接地板25向外突出。

公开(公告)号：US06839206B2

公开(公告)日：2005-01-04

申请号：US10093390

申请日：2002-03-11

申请人： Yoshiaki Saito ,  Masayuki Sagoi ,  Minoru Amano ,  Kentaro Nakajima ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Saito ,  Masayuki Sagoi ,  Minoru Amano ,  Kentaro Nakajima ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01F10/26 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3954 ,  G11C11/15 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.

公开(公告)号：US06707711B2

公开(公告)日：2004-03-16

申请号：US10357217

申请日：2003-02-04

申请人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

发明人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

IPC分类号： G11C1100

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3231 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

摘要翻译： 提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一 插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属 纳米颗粒膜。