公开(公告)号：US20130092085A1

公开(公告)日：2013-04-18

申请号：US13647974

申请日：2012-10-09

Applicant: Synos Technology, Inc.

Inventor： Sang In LEE

IPC: C23C16/458 ,  C23C16/04

CPC classification number: C23C16/45551

Abstract: Embodiments relate to a linear deposition apparatus with mechanism for securing a shadow mask and a substrate onto a susceptor. The linear deposition apparatus includes a set of members attached to latches that are raised to unlock the shadow mask and the substrate from the susceptor. The latches are lowered to secure the shadow mask and the substrate to the susceptor. Another set of members are provided in the linear deposition apparatus to move and align the shadow mask with the substrate. The linear deposition apparatus also includes a main body and two wings provided at both sides of the main body to receive the substrate as the substrate moves linearly to expose the substrate to materials or radicals injected by reactors.

Abstract translation: 实施例涉及具有用于将荫罩和基板固定到基座上的机构的线性沉积设备。 线性沉积装置包括附接到闩锁的一组构件，其被升高以从基座解锁荫罩和基板。 锁定器被降低以将荫罩和基板固定到基座。 在线性沉积设备中设置另一组构件以使荫罩与衬底移动和对齐。 线性沉积装置还包括主体和设置在主体的两侧的两个翼片，以在衬底线性移动时接收衬底，以将衬底暴露于由反应器注入的材料或自由基。

公开(公告)号：US08333839B2

公开(公告)日：2012-12-18

申请号：US11965235

申请日：2007-12-27

Applicant: Jae-eung Oh

Inventor： Jae-eung Oh

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/46 ,  C23C16/511 ,  C23C16/54

CPC classification number: C23C16/45551

Abstract: A vapor deposition reactor has a configuration where a substrate or a vapor deposition reactor moves in a non-contact state with each other to allow the substrate to pass by the reactor and an injection unit and an exhaust unit are installed as a basic module of the reactor for receiving a precursor or a reactant and for receiving and pumping a purge gas, respectively. With the use of a small-size inlet for the reactor, homogeneous film properties are obtained, the deposition efficiency of precursors is improved, and an amount of time required for a purge/pumping process can be reduced. In addition, since the reactor itself is configured to reflect each step of ALD, it does not need a valve. Moreover, the reactor makes it easier for users to apply remote plasma, use super high frequencies including microwave, and UV irradiation.

Abstract translation: 气相沉积反应器具有其中基板或气相沉积反应器以非接触状态彼此移动以允许基板通过反应器并且注入单元和排气单元作为基本模块安装的构造 用于接收前体或反应物并用于分别接收和泵送吹扫气体的反应器。 通过使用反应器的小尺寸入口，获得均匀的膜性质，提高了前体的沉积效率，并且可以减少吹扫/泵送过程所需的时间。 另外，由于反应器本身被配置为反映ALD的每个步骤，所以不需要阀。 此外，反应器使用户更容易应用远程等离子体，使用超高频，包括微波和紫外线照射。

公开(公告)号：US20120251738A1

公开(公告)日：2012-10-04

申请号：US13410545

申请日：2012-03-02

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/50 ,  C23C16/45517 ,  C23C16/45544

Abstract: Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.

Abstract translation: 实施例涉及在注入的极性前体分子的路径上施加磁场以引起前体分子相对于基底表面的螺旋运动。 当极性前体分子到达基底表面时，极性前体分子由于其惯性而在表面上产生横向运动。 极性前体分子的这种侧向运动增加了分子在位置（例如成核位点，断裂键和阶梯表面位置）处发现并沉降或在基底表面上反应的机会。 由于极性前体分子的吸收或反应的机会增加，所以可以减少注射时间或注射次数。

公开(公告)号：US20120213945A1

公开(公告)日：2012-08-23

申请号：US13397590

申请日：2012-02-15

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/42 ,  C23C16/02

CPC classification number: C23C16/45534 ,  B05D1/36 ,  B05D1/38 ,  B05D1/60 ,  B05D1/62 ,  C23C16/345 ,  C23C16/45517 ,  C23C16/45553 ,  C23C16/513

Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

Abstract translation: 实施例涉及在不同的沉积过程阶段使用自由基。 可以通过在远离衬底的电抗器中的电极上施加电压来产生自由基。 在分子层沉积（MLD），原子层沉积（ALD）和化学气相沉积（CVD）的不同阶段将基团注入到衬底上，以改善沉积层的特性，从而能够沉积不可行的材料和/或 增加沉积速率。 用于产生自由基的气体可包括惰性气体和其它气体。 基团可以分解前体，活化沉积层的表面或引起沉积的分子之间的交联。

公开(公告)号：US20120021252A1

公开(公告)日：2012-01-26

申请号：US13185793

申请日：2011-07-19

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C01F7/02 ,  H05H1/00 ,  B32B9/00 ,  C23C16/50

CPC classification number: C23C16/45534 ,  C23C16/45551 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32752 ,  H01J37/32779 ,  H01J2237/332

Abstract: Depositing one or more layers of material on a substrate using atomic layer deposition (ALD) followed by surface treating the substrate with radicals of inert gas before subjecting the substrate to further deposition of layers. The radicals of the inert gas appear to change the surface state of the deposited layer to a state more amenable to absorb subsequent source precursor molecules. The radicals of the inert gas disconnect bonding of molecules on the surface of the substrate, and render the molecules on the surface to have dangling bonds. The dangling bonds facilitate absorption of subsequently injected source precursor molecules into the surface. Exposure to the radicals of the inert gas thereby increases the deposition rate and improves the properties of the deposited layer.

Abstract translation: 使用原子层沉积（ALD）在衬底上沉积一层或多层材料，然后在使衬底进一步沉积层之前用惰性气体的自由基进行表面处理。 惰性气体的自由基似乎将沉积层的表面状态改变为更适于吸收后续的源前体分子的状态。 惰性气体的自由基分离在基底表面上的分子结合，并使表面上的分子具有悬挂键。 悬挂键有助于随后将注入的源前体分子吸收到表面中。 暴露于惰性气体的自由基因而增加了沉积速率并改善了沉积层的性能。

公开(公告)号：US20100041179A1

公开(公告)日：2010-02-18

申请号：US12539289

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/20 ,  H01L21/31 ,  H01L21/3205

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20100006145A1

公开(公告)日：2010-01-14

申请号：US12498298

申请日：2009-07-06

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/02168 ,  H01L31/02165 ,  H01L31/022466 ,  Y02E10/50

Abstract: Example embodiments relate to a solar cell and a method for fabricating the same, and more particularly, to a solar cell in which a substrate capable of functioning as electrode is used and a method for fabricating the same. The solar cell may include a substrate and a semiconductor layer laminated on the substrate. The solar cell may include a conductive substrate. The substrate may be a flexible substrate having a coefficient of thermal expansion comparable to that of the semiconductor layer. The semiconductor layer may be formed on the substrate. The solar cell may include a front electrode formed on the semiconductor layer.

Abstract translation: 示例性实施例涉及一种太阳能电池及其制造方法，更具体地说，涉及一种使用能够起电极作用的基板的太阳能电池及其制造方法。 太阳能电池可以包括层叠在基板上的基板和半导体层。 太阳能电池可以包括导电基板。 衬底可以是具有与半导体层的热膨胀系数相当的热膨胀系数的柔性衬底。 半导体层可以形成在基板上。 太阳能电池可以包括形成在半导体层上的前电极。

公开(公告)号：US20140065307A1

公开(公告)日：2014-03-06

申请号：US13966103

申请日：2013-08-13

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee

IPC: B05C3/00 ,  B05D1/40

CPC classification number: B05C3/005 ,  B05D1/40 ,  C23C16/45551 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/463

Abstract: Cooling a heated substrate undergoing a deposition process (e.g., ALD, MLD or CVD) and a deposition reactor for performing the deposition process by routing a cooled purge gas through a path in the deposition reactor and then injecting the cooled purge gas onto the substrate. The deposition reactor may include a heater to heat precursor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. As a result of operating the heater and routing the heated precursor, the temperature of the substrate and the deposition reactor may be increased. To drop the temperature of the substrate and the deposition reactor, a purge gas cooled to a temperature lower than the heated precursor is injected onto the substrate via the deposition reactor

Abstract translation: 冷却经历沉积工艺（例如ALD，MLD或CVD）的加热衬底和沉积反应器，用于通过将冷却的吹扫气体穿过沉积反应器中的路径，然后将冷却的吹扫气体注入到衬底上来执行沉积工艺。 沉积反应器可以包括加热器以加热前体。 当前体通过加热器时，将前体加热到有利于沉积过程的温度。 作为操作加热器并布置加热的前体的结果，可以增加基板和沉积反应器的温度。 为了降低基板和沉积反应器的温度，将冷却到低于被加热前体的温度的吹扫气体经由沉积反应器

公开(公告)号：US20140030447A1

公开(公告)日：2014-01-30

申请号：US13742148

申请日：2013-01-15

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/26

CPC classification number: C23C16/26 ,  C23C16/452 ,  H01J37/32082

Abstract: Depositing a layer of graphene or conjugate carbons on a surface of a substrate using carbon radicals generated by exposing a carbon material to radicals of a gas. The radicals of the gas are generated by injecting the gas into a plasma chamber and then applying voltage difference to electrodes within or surrounding the plasma chamber. The radicals of the gas come into contact with the carbon material (e.g., graphite) and excite carbon radicals. The excited carbon radicals are injected onto the surface of the substrate, passes through a constriction zone of the reactor assembly and are then exhausted through a discharge portion of the reactor assembly. When the excited carbon radicals come into contact with the substrate, the carbon radicals form a layer of graphene or conjugated carbons on the substrate.

Abstract translation: 使用通过将碳材料暴露于气体的自由基而产生的碳自由基，在基体的表面上沉积一层石墨烯或共轭碳。 气体的自由基通过将气体注入到等离子体室中，然后将电压差施加到等离子体室内或周围的电极而产生。 气体的自由基与碳材料（例如石墨）接触并激发碳自由基。 将激发的碳自由基注入基材的表面，通过反应器组件的收缩区域，然后通过反应器组件的排出部分排出。 当激发的碳自由基与基底接触时，碳自由基在基底上形成一层石墨烯或共轭碳。

公开(公告)号：US20130260034A1

公开(公告)日：2013-10-03

申请号：US13849477

申请日：2013-03-23

Applicant: SYNOS TECHNOLOGY, INC.

Inventor： Samuel S. Pak ,  Sang In Lee ,  Ilsong Lee ,  Hyo Seok Yang

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45561 ,  C23C16/45589

Abstract: An injection module assembly (IMA) that moves along a predetermined path to inject gas onto a substrate and discharge excess gas is described. The IMA may be used for processing a substrate that is difficult to move for various reasons such as a large size and weight of the substrate. The IMA is connected to one or more sets of jointed arms with structures to provide one or more paths for injecting the gas or discharging the excess gas. The IMA is moved by a first driving mechanism (e.g., linear motor) and the jointed arms are separately operated by a second driving mechanism (e.g., pulleys and cables) to reduce force or torque caused by the weight of the jointed arms. The movement of the first driving mechanism and the second driving mechanism is synchronized to move the IMA and the jointed arms.

Abstract translation: 描述了沿着预定路径移动以将气体注入基板并排出多余气体的注射模块组件（IMA）。 IMA可以用于处理由于各种原因（例如基板的大尺寸和重量）而难以移动的基板。 IMA连接到具有结构的一组或多组接合臂，以提供用于喷射气体或排出多余气体的一个或多个路径。 IMA由第一驱动机构（例如，线性马达）移动，并且连接的臂由第二驱动机构（例如，滑轮和电缆）分开操作，以减少由连接的臂的重量引起的力或扭矩。 第一驱动机构和第二驱动机构的运动被同步以移动IMA和连接臂。