公开(公告)号：US07541257B2

公开(公告)日：2009-06-02

申请号：US11519064

申请日：2006-09-12

Applicant: Eiji Ishikawa ,  Takaaki Aoki

Inventor： Eiji Ishikawa ,  Takaaki Aoki

IPC: H01L21/76

CPC classification number: H01L31/035281 ,  B81B2201/058 ,  B81B2201/06 ,  B81C1/00071 ,  B81C2201/0169 ,  Y02E10/50

Abstract: A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.

Abstract translation: 半导体器件包括：硅衬底; 以及设置在硅衬底上的氧化硅膜。 氧化硅膜包括从硅衬底的表面分离的部分，使得氧化硅膜提供三维结构。 通过使用三维构造，在该装置中容易添加诸如电阻器或电容器的附加功能。 此外，该三维构造的制造方法简单，成本低。

公开(公告)号：US07371600B2

公开(公告)日：2008-05-13

申请号：US10344006

申请日：2001-06-13

Applicant: Kiyoshi Ishibashi ,  Makio Horikawa ,  Mika Okumura ,  Masaaki Aoto ,  Daisaku Yoshida ,  Hirofumi Takakura

Inventor： Kiyoshi Ishibashi ,  Makio Horikawa ,  Mika Okumura ,  Masaaki Aoto ,  Daisaku Yoshida ,  Hirofumi Takakura

IPC: H01L21/00 ,  H01L29/82

CPC classification number: B81C1/00666 ,  B81B2201/0235 ,  B81C2201/0164 ,  B81C2201/0169 ,  G01P15/125 ,  G01P2015/0814 ,  H01G4/33 ,  H01G5/16

Abstract: A thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof. The thin-film structural body allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker. The thin-film member forms a mass body and, beams and fixed electrodes of the semiconductor acceleration sensor are constituted by a plurality of doped polysilicon thin-films that are laminated by performing a step of film deposition of polysilicon while, for example, phosphorous is being doped as impurities plural times.

Abstract translation: 通过使用半导体加工技术形成的薄膜结构体及其制造方法，特别是构成半导体加速度传感器的薄膜结构体及其制造方法。 薄膜结构体允许薄膜构件易于受到应力控制，并且容易使薄膜构件的膜厚变厚。 薄膜构件形成质量体，并且半导体加速度传感器的束和固定电极由多个掺杂的多晶硅薄膜构成，所述多个多晶硅薄膜通过执行多晶硅的薄膜沉积步骤而被层压，而例如磷是 作为杂质多次掺杂。

公开(公告)号：US20070066052A1

公开(公告)日：2007-03-22

申请号：US11519064

申请日：2006-09-12

Applicant: Eiji Ishikawa ,  Takaaki Aoki

Inventor： Eiji Ishikawa ,  Takaaki Aoki

IPC: H01L21/4763 ,  H01L29/06

CPC classification number: H01L31/035281 ,  B81B2201/058 ,  B81B2201/06 ,  B81C1/00071 ,  B81C2201/0169 ,  Y02E10/50

Abstract: A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.

Abstract translation: 半导体器件包括：硅衬底; 以及设置在硅衬底上的氧化硅膜。 氧化硅膜包括从硅衬底的表面分离的部分，使得氧化硅膜提供三维结构。 通过使用三维构造，在该装置中容易添加诸如电阻器或电容器的附加功能。 此外，该三维构造的制造方法简单，成本低。

公开(公告)号：US06602428B2

公开(公告)日：2003-08-05

申请号：US09991986

申请日：2001-11-26

Applicant: Hiroyuki Wado ,  Makiko Sugiura ,  Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yasushi Kohno

Inventor： Hiroyuki Wado ,  Makiko Sugiura ,  Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yasushi Kohno

IPC: H01L2100

CPC classification number: G01F1/6845 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00182 ,  B81C2201/014 ,  B81C2201/0169 ,  G01L9/0042

Abstract: A sensor for measuring a physical amount such as an amount of air includes a membrane structure composed of metal stripes sandwiched between first and second insulating layers. A metal layer made of platinum or the like is formed on the first insulating layer and then heat-treated to improve its properties. Then, the metal layer is etched into a form of the metal stripes. The second insulating layer made of a material such as silicon dioxide is formed on the etched metal stripes. Since the metal layer is heat-treated before it is etched into the form of metal stripes, the metal stripes are not deformed by the heat-treatment. The second insulating layer can be formed on the metal stripes without generating cracks in the second insulating layer.

公开(公告)号：US20020070195A1

公开(公告)日：2002-06-13

申请号：US09991986

申请日：2001-11-26

Inventor： Hiroyuki Wado ,  Makiko Sugiura ,  Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yasushi Kohno

IPC: C23F001/00

CPC classification number: G01F1/6845 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00182 ,  B81C2201/014 ,  B81C2201/0169 ,  G01L9/0042

Abstract: A sensor for measuring a physical amount such as an amount of air includes a membrane structure composed of metal stripes sandwiched between first and second insulating layers. A metal layer made of platinum or the like is formed on the first insulating layer and then heat-treated to improve its properties. Then, the metal layer is etched into a form of the metal stripes. The second insulating layer made of a material such as silicon dioxide is formed on the etched metal stripes. Since the metal layer is heat-treated before it is etched into the form of metal stripes, the metal stripes are not deformed by the heat-treatment. The second insulating layer can be formed on the metal stripes without generating cracks in the second insulating layer.

Abstract translation: 用于测量诸如空气量的物理量的传感器包括由夹在第一和第二绝缘层之间的金属条构成的膜结构。 在第一绝缘层上形成由铂等制成的金属层，然后进行热处理以改善其性能。 然后，金属层被蚀刻成金属条纹的形式。 在蚀刻的金属条纹上形成由诸如二氧化硅的材料制成的第二绝缘层。 由于金属层在被蚀刻成金属条纹之前被热处理，金属条不会因热处理而变形。 可以在金属条上形成第二绝缘层，而不会在第二绝缘层中产生裂纹。

公开(公告)号：US06204085B1

公开(公告)日：2001-03-20

申请号：US09392136

申请日：1999-09-08

Applicant: Mark H. Strumpell ,  Judith C. Frederic ,  Michael R. Douglass

Inventor： Mark H. Strumpell ,  Judith C. Frederic ,  Michael R. Douglass

IPC: H01L2100

CPC classification number: B81C1/00666 ,  B81B2201/042 ,  B81C2201/0169 ,  G02B26/0841

Abstract: A method and system of reducing the permanent accumulated deformation of a deflectable member of a micromechanical device through thermal stabilization. The accumulated deformation is due to the repeated bending or twisting of a flexible component of the micromechanical deice typically the repetitive deformation of a flexible hinge connecting a rigid member to substrate. After the device is fabricated, passivated (316), and packaged (322), the packaged device is baked (326) at a temperature of at least 120° C. A 150° C. bake for 12 to 16 hours is preferred. Lower temperatures required longer baking periods.

Abstract translation: 一种通过热稳定来减少微机械装置的偏转构件的永久累积变形的方法和系统。 累积的变形是由于微机械装置的柔性部件的反复弯曲或扭曲通常是将刚性构件连接到基板的柔性铰链的重复变形。 在器件制造之后，钝化（316）和封装（322），封装的器件在至少120℃的温度下烘烤（326）。优选150℃烘烤12至16小时。 较低的温度需要更长的烘烤时间。

公开(公告)号：US20180222748A1

公开(公告)日：2018-08-09

申请号：US15875943

申请日：2018-01-19

Applicant: Georgia Tech Research Corporation

Inventor： Benoit Hamelin ,  Farrokh Ayazi

IPC: B81C1/00 ,  B23K26/20

CPC classification number: B81C1/0065 ,  B23K26/0006 ,  B23K26/20 ,  B23K26/34 ,  B23K26/351 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/52 ,  B81B3/007 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0166 ,  B81C2201/0167 ,  B81C2201/0169 ,  H01L41/253 ,  H03H3/013 ,  H03H3/04

Abstract: Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.

公开(公告)号：US09776854B2

公开(公告)日：2017-10-03

申请号：US15068511

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akira Fujimoto ,  Naofumi Nakamura ,  Tamio Ikehashi

IPC: H01L29/786 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81C1/00365 ,  B81C2201/0167 ,  B81C2201/0169 ,  G01P15/0802 ,  G01P15/125

Abstract: According to one embodiment, a method of manufacturing a device is provided. A amorphous metal layer is formed. A metal layer containing metal and having a crystal plane oriented to a predetermined plane is formed on the amorphous metal layer. A first layer containing semiconductor including silicon, and metal identical to the metal contained in the metal layer is formed on the metal layer. The first layer is changed to a second layer containing a compound of the semiconductor and the metal, the compound having a crystal plane oriented to the predetermined plane. A third layer containing polycrystalline silicon-germanium and having a crystal plane oriented to the predetermined plane is formed on the second layer.

公开(公告)号：US20160289060A1

公开(公告)日：2016-10-06

申请号：US15068511

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akira FUJIMOTO ,  Naofumi NAKAMURA ,  Tamio IKEHASHI

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81C1/00365 ,  B81C2201/0167 ,  B81C2201/0169 ,  G01P15/0802 ,  G01P15/125

Abstract: According to one embodiment, a method of manufacturing a device is provided. A amorphous metal layer is formed. A metal layer containing metal and having a crystal plane oriented to a predetermined plane is formed on the amorphous metal layer. A first layer containing semiconductor including silicon, and metal identical to the metal contained in the metal layer is formed on the metal layer. The first layer is changed to a second layer containing a compound of the semiconductor and the metal, the compound having a crystal plane oriented to the predetermined plane. A third layer containing polycrystalline silicon-germanium and having a crystal plane oriented to the predetermined plane is formed on the second layer.

Abstract translation: 根据一个实施例，提供了一种制造装置的方法。 形成非晶金属层。 在非晶金属层上形成含有金属并具有取向为规定面的晶面的金属层。 包含硅的第一层和包含在金属层中的金属相同的金属形成在金属层上。 将第一层改变为包含半导体和金属的化合物的第二层，该化合物具有定向到预定平面的晶体面。 在第二层上形成含有多晶硅锗并且具有定向到预定平面的晶体面的第三层。

公开(公告)号：US20150054096A1

公开(公告)日：2015-02-26

申请号：US14529824

申请日：2014-10-31

Applicant: RUBEN B. MONTEZ ,  Robert F. Steimle

Inventor： RUBEN B. MONTEZ ,  Robert F. Steimle

IPC: B81B3/00

CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

Abstract: A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

Abstract translation: 提供了一种用于通过减少在制造期间可能积聚在多晶硅表面上的基于TEOS的氧化硅膜的碳来减少MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层和基于TEOS的氧化硅层之间沉积碳阻挡材料膜。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。