公开(公告)号：US06444085B1

公开(公告)日：2002-09-03

申请号：US09675319

申请日：2000-09-29

Applicant: Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC: C23C1600

CPC classification number: H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract translation: 本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线 包括相对于工件的平面空间分布在非平面中的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。 平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。 在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

公开(公告)号：US20020096259A1

公开(公告)日：2002-07-25

申请号：US10021195

申请日：2001-10-30

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael Rice ,  Farahmand E. Askarinam ,  Douglas A. Buchberger JR. ,  Craig A. Roderick

IPC: C23F001/02

CPC classification number: H01J37/32458 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing RF power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.

Abstract translation: 在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为 （a）容纳RF功率的电容电极，以将等离子体源功率电容耦合到腔室中，以及（b）将RF功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。

公开(公告)号：US20020092826A1

公开(公告)日：2002-07-18

申请号：US10002397

申请日：2001-10-31

Inventor： Jian Ding

IPC: C23F001/00

CPC classification number: H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

Abstract: A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.

Abstract translation: 一种高等离子体密度蚀刻工艺，用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体 包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料 包括氟清除剂前体材料。 优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。 在一些情况下，等离子体源功率施加器是覆盖在半导体天花板上的感应天线，天花板具有通过半导体环接触天花板的冷却/加热设备。 在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

公开(公告)号：US06333273B1

公开(公告)日：2001-12-25

申请号：US09648772

申请日：2000-08-28

Applicant: Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

Inventor： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC: H01L2100

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32935 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

Abstract translation: 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁​​的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。

公开(公告)号：US06165311A

公开(公告)日：2000-12-26

申请号：US648254

申请日：1996-05-13

Applicant: Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC: H05H1/46 ,  B01D53/22 ,  B01D53/26 ,  C23C16/517 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  C23F1/02

CPC classification number: H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract translation: 本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线 包括相对于工件的平面以非平面方式空间分布的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。 平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。 在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

公开(公告)号：US6136721A

公开(公告)日：2000-10-24

申请号：US480477

申请日：2000-01-11

Applicant: Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

Inventor： Takao Kumihashi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32935 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01J2237/3322 ,  H01J2237/334 ,  H01J2237/3343

Abstract: A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

公开(公告)号：US06063233A

公开(公告)日：2000-05-16

申请号：US733555

申请日：1996-10-21

Applicant: Kenneth Collins ,  Michael Rice ,  Eric Askarinam ,  Douglas Buchberger ,  Craig Roderick

Inventor： Kenneth Collins ,  Michael Rice ,  Eric Askarinam ,  Douglas Buchberger ,  Craig Roderick

IPC: H05H1/46 ,  C23C16/517 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  C23F1/02 ,  C23C16/00

CPC classification number: H01J37/32458 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346

Abstract: The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material. The reactor can include a gas manifold in the cold body communicable with a source of the thermally conductive gas an inlet through the cold body from the gas manifold and opening out to the cold body interface. The reactor can further include an O-ring apparatus sandwiched between the cold body and the thermal conductor and defining a gas-containing volume in the cold body interface of nearly infinitesimal thickness in communication with the inlet from the cold body. More generally, the reactor can include the facilitation of thermal transfer across an interface between a hot and/or cold sink and any part exposed to the reactor chamber interior atmosphere, such as the ceiling, wall or polymer-hardening precursor ring, for example, by the insertion into that interface of a thermally conductive gas or substance.

公开(公告)号：US5990017A

公开(公告)日：1999-11-23

申请号：US104550

申请日：1998-06-25

Applicant: Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

Inventor： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US5837093A

公开(公告)日：1998-11-17

申请号：US383990

申请日：1995-02-06

Applicant: Makoto Hasegawa ,  Atsuo Sanda

Inventor： Makoto Hasegawa ,  Atsuo Sanda

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  C23F1/02

CPC classification number: H01L21/67069 ,  H01J37/3244 ,  H01L21/32137 ,  H01J2237/3343 ,  Y10S438/941

Abstract: Disclosed herein are a dry etching method and a dry etching apparatus. The method comprises a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is high, while the workpiece is being etched with reactive-gas plasma. The apparatus comprises functions for holding a reactive etching gas, a first electrode located within the gas-holding functions, for supporting a workpiece, a second electrode located within the gas-holding functions and spaced apart from the first electrode by a predetermined distance, functions for supplying high-frequency power, thereby to convert the reactive etching gas into a plasma in the space between the first and second electrodes, and functions for supplying an etching inhibiting gas to that portion of the workpiece where etching speed is high.

Abstract translation: 这里公开了干蚀刻方法和干蚀刻装置。 该方法包括在用反应气体等离子体蚀刻工件的同时，将蚀刻抑制气体施加到蚀刻速度高的工件的那部分。 该装置包括用于保持反应性蚀刻气体的功能，位于气体保持功能内的用于支撑工件的第一电极，位于气体保持功能内并与第一电极间隔预定距离的第二电极，功能 用于提供高频电力，从而将反应性蚀刻气体转换成在第一和第二电极之间的空间中的等离子体，以及用于向蚀刻速度高的工件的那部分提供蚀刻抑制气体的功能。

公开(公告)号：US5477975A

公开(公告)日：1995-12-26

申请号：US138060

申请日：1993-10-15

Applicant: Michael Rice ,  Jeffrey Marks ,  David W. Groechel ,  Nicolas J. Bright

Inventor： Michael Rice ,  Jeffrey Marks ,  David W. Groechel ,  Nicolas J. Bright

IPC: C23F4/00 ,  B44C1/22 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/32871 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J2237/3343 ,  H01J2237/3346 ,  Y10S438/909

Abstract: The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.