Abstract:
A technique for measuring the chemical composition of surface particles or other small features which may be present on semiconductor wafers or other substrates. A particle is irradiated with a variable energy, focused incident electron beam. X-ray or electron emissions from the particle are monitored to detect an increase in output indicating the ionization threshold of the materials in the particle. The incident beam energy is correlated with the thresholds detected to determine the species present in the particle.
Abstract:
An electron multiplier having an access for allowing a beam to pass is presented. The electron multiplier collects particles traveling back along the beam and is capable of collecting the particles arbitrarily close to the beam. The electron multiplier includes at least two plates having secondary electron emitting surfaces, the at least two plates being separated by a small distance. The electron multiplier has a beam access through the at least two plates. Particles enter the electron multiplier in a direction opposite that of propagation of the beam and impact a secondary electron emitting surface, thereby being captured between the top plate and the bottom plate. In some embodiments of the invention, the electron multiplier is segmented so that azimuthal distributions of the particles can be determined. In some embodiments, the electron multiplier includes a stack of electron emitting surfaces arranged so that an angular distribution of the particles can be determined.
Abstract:
A KLM marker display controller for use with an electron probe microanalyzer or the like. This controller has a marker information table holding positional information about markers, line species and orders in tabular form for each element. When the human operator specifies an element, line species and orders through a marker-specifying portion to display markers, positional information about the line species of this element is read from the marker information table and the markers are displayed at positions determined by the positional information and the orders.
Abstract:
An X-ray analyzing method includes the steps of applying an irradiated electron beam, converged by a condenser lens and an objective lens into a thin beam, to the inside of a fine hole existing on the surface of a sample; observing X-rays generated from a residual substance existing inside the fine hole; and performing a qualitative and quantitative analysis of the residual substance. The X-rays are observed by an X-ray detector installed in an internal space of the condenser lens, an internal space of the objective lens, or between the condenser lens and the objective lens, by detecting only the X-rays radiated within the angular range -.theta. to +.theta., where .theta. is an angle formed with a center axis of the electron beam, and so defined that tan .theta. is substantially equal to a/d, where a and d are the radius and the depth of the fine hole, respectively.
Abstract:
The present invention is to provide a method for detecting hydrogen with ultra high sensitivity based on slow multiply-charged ion wherein damages of a target surface can be remarkably reduced and a quantitative analysis of hydrogen atoms on a solid surface can be compactly realized with extremely high efficiency by employing slow multiply-charged ions derived from an ion source for efficiently generating multiply-charged ions. The present invention relate to a method of ultra high sensitivity hydrogen detection based on slow multiply-charged ions comprising: arranging an EBIS type slow multiply-charged ion source for generating slow multiply-charged ions having potential energy higher than kinetic energy, a Wien filter type mass analyzer, a deflector for producing a pulsed ion beam, an acceleration ring provided with apertures lenses and a secondary ion detector, a target on a Cu mesh provided on the acceleration ring and a secondary electron multiplier in order on a beam line for carrying ions from the ion source, detecting secondary ions generated upon the collision of slow multiply-charged ions with the target by accelerating the secondary ions toward the secondary ion detector, detecting secondary electrons in the secondary electron multiplier by repelling toward the mesh target and measuring a time difference between a secondary electron detection time on the secondary electron multiplier and a secondary ion detection time on the secondary ion detector, thereby effecting a quantitative analysis of hydrogen atoms on a solid surface of the target on the Cu mesh.
Abstract:
An electron microscope capable of performing accurate x-ray analysis is provided. An objective lens having a bottom polepiece from which unwanted x-rays are not produced is attached to the electron microscope. An EDS (energy-dispersive x-ray spectrometer) detector is also attached to the electron microscope to make an x-ray analysis. A film consisting of a light element such as beryllium is coated on the top surface and the tapering portion of the bottom polepiece to prevent the electron beam transmitted through the sample or the secondary electrons and the scattered electrons emanating from the sample from colliding against the surface of the bottom polepiece; otherwise x-rays characteristic of Fe and Co would be generated.
Abstract:
A combination apparatus having a scanning electron microscope includes equipment for performing any of observing, measuring and processing operations on a sample placed in a sample chamber. The sample chamber contains a focused electron beam irradiating unit apart from the components for performing the observing, measuring and processing operations. The focused electron beam irradiating unit irradiates a finely focused electron beam onto the surface of the sample for electron microscopic observation in scanning fashion. This setup allows the observing, measuring or processing equipment to combine with the scanning electron microscope without appreciably enlarging the construction of the combination apparatus.
Abstract:
A sample is irradiated with an electron beam and analyzed by detecting characteristics X-rays obtained from the sample and electron beams transmitted thereby. There is provided means, which collects analysis results obtained by this analysis to compare the analysis results thus collected.
Abstract:
A Rutherford backscattering analyzer comprising in combination:a hollow electrode,a voltage source for impressing upon said hollow electrode a positive voltage of the order of 10.sup.6 volts,a first acceleration tube connected between said voltage source and ground,a second acceleration tube connected said voltage source and ground,a deflecting magnet within said terminal having pole pieces between which is supported an evacuated region connecting said acceleration tubes to each other,a source of positive helium ions,a lithium charge-exchange canal,means for analyzing said helium ions and directing them into said canal,an electron stripper within said terminal,said magnet being adapted to direct said stripped ions into said second acceleration tube for acceleration therethrough,a sample holder for holding a sample to be analyzed in the path of the ions emerging from said second acceleration tube, andmeans for analyzing the energy and yield of helium ions backscattered from said sample,said magnet including permanently magnetized members producing a magnetic flux of a least 3000 gauss and having a magnetic hardness no less than that of samarium cobalt.
Abstract:
An apparatus for the performance of the SNMS process, having a separate ion source, a sample holder, a system for the production of a radio-frequency plasma and a mass analyzer, in which the ion source and the mass analyzer are disposed side by side on the same side of the chamber provided for the radio-frequency plasma, and in which the sample mounted on the sample holder is situated within the chamber provided for the radio-frequency plasma. This apparatus can be used not only for the performance of the two kinds of SNMS operation (DMB and SBM) but also secondary ion mass spectroscopy (SIMS) under optimum spatial conditions.