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    Method of etching a semiconductor device by an ion beam
    2.
    发明授权
    Method of etching a semiconductor device by an ion beam 失效
    通过离子束蚀刻半导体器件的方法

    公开(公告)号：US5086015A

    公开(公告)日：1992-02-04

    申请号：US394364

    申请日：1989-08-15

    申请人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

    发明人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768

    CPC分类号： H01L21/76802 ,  Y10S148/046

    摘要： A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.

    摘要翻译： 公开了一种通过离子束蚀刻具有多层布线的半导体器件的方法，该方法包括以下步骤：从高密度离子源提取高强度离子束; 聚焦提取的离子束; 使聚焦离子束通过施加到偏转电极的电压进行扫描操作; 通过所述聚焦离子束在所述半导体器件中形成第一孔至能够到达形成在上部和下部布线导体之间的绝缘膜的深度，使得所述第一孔具有对应于所述上部布线导体的起伏的弯曲底部，并且 上部布线导体在第一个孔的底部不存在; 并用聚焦离子束扫描第一孔的底部的一部分，以在绝缘膜中形成能够到达下布线导体的深度的第二孔，从而防止上布线导体和下布线导体之间的短路。 此外，公开了一种通过离子束在具有半导体器件的阶梯状部分的表面区域形成预定形状的孔的方法，该方法包括：扫描步骤的高级区域的预蚀刻步骤 具有离子束的部分，使得高级区域变得与阶梯状部分的低级区域相等，并且主要步骤是用离子束扫描整个表面积直到孔 在半导体器件中形成预定形状。

    Optical mask and method of correcting the same
    5.
    发明授权
    Optical mask and method of correcting the same 失效
    光学掩模及其校正方法

    公开(公告)号：US5439763A

    公开(公告)日：1995-08-08

    申请号：US22909

    申请日：1993-02-26

    申请人： Akira Shimase ,  Junzou Azuma ,  Satoshi Haraichi ,  Fumikazu Itoh ,  Yasuhiro Koizumi

    发明人： Akira Shimase ,  Junzou Azuma ,  Satoshi Haraichi ,  Fumikazu Itoh ,  Yasuhiro Koizumi

    IPC分类号： G03F1/26 ,  G03F1/30 ,  G03F1/72 ,  G03F9/00

    CPC分类号： G03F1/72 ,  G03F1/26 ,  G03F1/30

    摘要： An optical mask for a projection optical system and a method of correcting the mask wherein the mask includes a light intercepting pattern formed on a transparent substrate and a phase shifter for changing the phase of an exposure light provided at predetermined openings of the light intercepting pattern. An etching stopper film which transmits the exposure light is provided between said phase shifter and said light intercepting pattern and for correction of the mask a focused ion beam is utilized for removal of defects by the phase shifter.

    摘要翻译： 一种用于投影光学系统的光学掩模和一种校正掩模的方法，其中掩模包括形成在透明基板上的遮光图案和用于改变设置在遮光图案的预定开口处的曝光光的相位的移相器。 在所述移相器和所述遮光图案之间设置有曝光光的蚀刻停止膜，并且为了校正掩模，使用聚焦离子束来消除由移相器产生的缺陷。

    Ion beam processing method and apparatus
    6.
    发明授权
    Ion beam processing method and apparatus 失效
    离子束处理方法和装置

    公开(公告)号：US5223109A

    公开(公告)日：1993-06-29

    申请号：US766328

    申请日：1991-09-27

    申请人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Junzou Azuma

    发明人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Junzou Azuma

    IPC分类号： B23K15/00 ,  H01J37/305

    CPC分类号： H01J37/3056 ,  H01J2237/202 ,  H01J2237/31

    摘要： There is disclosed an ion beam processing method of processing a rotating workpiece for a very small-size rotary member, using an ion beam or a focused ion beam. Apparatus for performing this method is also disclosed. In the formation of a product having a non-circular cross-section, when the amount of application of the ion beam is kept constant, the rotational angular velocity of the workpiece is varied in accordance with the rotational angular position of the workpiece. On the other hand, when the rotational angular velocity of the workpiece is kept constant, the amount of application of the ion beam is varied. When it is difficult to align the axis of the workpiece with the axis of rotation of a workpiece holder, the focused ion beam is applied in accordance with the oscillation of the workpiece.

    摘要翻译： 公开了使用离子束或聚焦离子束来处理非常小尺寸的旋转构件的旋转工件的离子束处理方法。 还公开了用于执行该方法的装置。 在形成具有非圆形横截面的产品时，当离子束的施加量保持恒定时，工件的旋转角速度根据工件的旋转角度位置而变化。 另一方面，当工件的旋转角速度保持恒定时，离子束的施加量变化。 当难以将工件的轴线与工件保持架的旋转轴对齐时，根据工件的振动施加聚焦离子束。

    Processing method and apparatus using focused energy beam
    7.
    发明授权
    Processing method and apparatus using focused energy beam 失效
    使用聚焦能量束的加工方法和装置

    公开(公告)号：US5683547A

    公开(公告)日：1997-11-04

    申请号：US273780

    申请日：1994-07-12

    申请人： Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

    发明人： Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

    IPC分类号： H01J37/305 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/30

    CPC分类号： H01L21/76892 ,  H01J37/3056 ,  H01L21/32136 ,  H01L21/76879 ,  H01J2237/006 ,  H01J2237/31744

    摘要： A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.

    摘要翻译： 一种处理方法和装置，其特征在于，在蚀刻气体气氛中，通过用离子束或电子束等聚焦能量束照射样品，使用聚焦能量束进行聚焦能量束照射区域的局部能量束处理。 作为蚀刻气体，使用与常规方法不同组成的混合气体，并将气体均匀地供给到蚀刻区域，并且这种混合气体的至少一个成分是用于蚀刻样品的自发反应气体 自发和各向同性。 通过这种布置，由于单一蚀刻气体引起反应太剧烈或几乎几乎不发生反应，因此可以局部蚀刻局部蚀刻不可能提供的材料。

    Phase shift mask, method of correcting the same and apparatus for carrying out the method
    8.
    发明授权
    Phase shift mask, method of correcting the same and apparatus for carrying out the method 失效
    相移掩模，校正方法以及执行该方法的装置

    公开(公告)号：US5358806A

    公开(公告)日：1994-10-25

    申请号：US854861

    申请日：1992-03-19

    申请人： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

    发明人： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

    IPC分类号： G03F1/26 ,  G03F1/74 ,  G03F9/00

    CPC分类号： H01J37/228 ,  G03F1/74 ,  H01J37/3056 ,  G03F1/26 ,  H01J2237/2482 ,  H01J2237/30466

    摘要： A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase shifter is selectively etched.

    摘要翻译： 具有设置在透明基板上的移相器的相移掩模的缺陷形成为预定图案并且用于移动透过其的曝光光的相位和设置在移相器和透明基板之间的蚀刻阻挡层， 对于移相器经受的蚀刻和曝光的透明度的蚀刻是通过沿相位的整个厚度相对于蚀刻停止层选择性蚀刻缺陷型缺陷的相移器的缺陷部分而被校正的 并且通过将位于蚀刻的缺陷部分下方的蚀刻阻挡层和透明基板的一部分穿孔相当于用于曝光光的移相器的光路的大小的深度，蚀刻是使用的反应性蚀刻 带电粒子束和反应性气体，并且通过利用被蚀刻的部分的底表面变平 移相器被选择性蚀刻的事实。

    Method of providing a semiconductor IC device with an additional conduction path
    9.
    发明授权
    Method of providing a semiconductor IC device with an additional conduction path 失效
    提供具有附加传导路径的半导体IC器件的方法

    公开(公告)号：US5026664A

    公开(公告)日：1991-06-25

    申请号：US334145

    申请日：1989-04-06

    申请人： Mikio Hongo ,  Katsuro Mizukoshi ,  Shuzo Sano ,  Takashi Kamimura ,  Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi

    发明人： Mikio Hongo ,  Katsuro Mizukoshi ,  Shuzo Sano ,  Takashi Kamimura ,  Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi

    IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52

    CPC分类号： H01L21/76838 ,  H01L21/32051 ,  H01L21/76892 ,  Y10S148/093

    摘要： A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film. The provision of the additional conduction path and/or the removal of part of the patterned conductor layer is preformed in a chemical vapor deposition apparatus which includes a vacuum chamber and an ion beam radiation unit having a housing partitioned into, for example, first, second and third compartments. The ion beam radiation unit has an ion source placed in the first compartment, an ion beam focusing and deflecting device placed in the second compartment and pressure buffer constituted by the third compartment. The third compartment is coupled to and pneumatically isolated from the vacuum chamber for conducting an ion beam emitted from the ion source, passing the second compartment and ejected from the second compartment to the vacuum chamber.

    摘要翻译： 具有衬底，用于衬底中的区域的互连的图案化导体层和覆盖该器件的钝化层的半导体IC器件被设置有去除图案和/或图案化导体层的一部分的附加传导路径用于断开 评估设备特点的目的。 附加传导路径是通过在钝化层中形成一个孔而露出导体层的一部分而形成的，该导体层的一部分在包含金属化合物气体的气氛中引导离子束到孔上并延伸到钝化层的预定部分上 其形成图案的附加传导路径，从而形成从金属化合物气体分解的金属的图案化膜，并在图案化膜上形成附加导体。 提供额外的传导路径和/或去除图案化的导体层的一部分在化学气相沉积设备中预先形成，该化学气相沉积设备包括真空室和离子束辐射单元，该单元具有被分隔成例如第一，第二 和第三个隔间。 离子束辐射单元具有放置在第一隔室中的离子源，放置在第二隔室中的离子束聚焦和偏转装置以及由第三隔间构成的压力缓冲器。 第三隔室与真空室联接并气动隔离，用于传导从离子源发射的离子束，通过第二隔室并从第二隔室喷射到真空室。