利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

195 条记录 (耗时 0.021 秒)

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    21.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20150053645A1

    公开(公告)日：2015-02-26

    申请号：US14301450

    申请日：2014-06-11

    申请人： Panasonic Corporation

    发明人： Tomohiro OKUMURA

    IPC分类号： H01J37/32

    CPC分类号： H01J37/321 ,  H01J37/32119 ,  H01J37/32935

    摘要： The plasma processing apparatus includes a dielectric member for defining a chamber, a gas introducing part for introducing a gas into the chamber, a discharge coil disposed on one side of the dielectric member and supplied with AC power to generate a plasma in the chamber into which the gas has been introduced, a conductor member disposed on the other side of the dielectric member and facing the discharge coil with the chamber of the dielectric member interposed therebetween, an AC power source for supplying AC voltage to the discharge coil, an opening communicating with the chamber and serving for applying the plasma to a substrate to be processed, and a moving mechanism for moving the substrate relative to the chamber so that the substrate passes across a front of the opening. The discharge coil is grounded or connected to the conductor member via a voltage generating capacitor or a voltage generating coil.

    摘要翻译： 等离子体处理装置包括用于限定腔室的电介质构件，用于将气体引入腔室的气体引入部件，设置在电介质构件的一侧上并且供给AC电力以在腔室中产生等离子体的放电线圈， 已经引入了气体，导体部件设置在电介质部件的另一侧并面对放电线圈，电介质部件的室插入其间，用于向放电线圈提供AC电压的AC电源，与 所述室并用于将等离子体施加到待处理的基板;以及移动机构，用于相对于所述室移动所述基板，使得所述基板穿过所述开口的前部。 放电线圈经由电压产生电容器或电压产生线圈接地或连接到导体部件。

    Inductive plasma source with high coupling efficiency
    22.
    发明授权
    Inductive plasma source with high coupling efficiency 有权
    具有高耦合效率的感应等离子体源

    公开(公告)号：US08920600B2

    公开(公告)日：2014-12-30

    申请号：US11843595

    申请日：2007-08-22

    申请人： Valery Godyak

    发明人： Valery Godyak

    IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H05H1/46

    CPC分类号： H01J37/32119 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32137 ,  H01J37/32449 ,  H01J37/3266 ,  H05H1/46

    摘要： A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.

    摘要翻译： 提供了一种用于在制造装置中用射频感应等离子体处理衬底的方法和装置。 用具有一个或多个电感耦合元件的感应等离子体施加器来维持感应等离子体。 电感耦合元件和处理室内部之间有薄窗。 各种实施例在感应耦合元件中具有磁通量聚集器和散布在感应耦合元件之间的馈送气体孔。 薄窗，磁通集中器和散布的进料气孔可用于实现均匀加工，高功率转移效率和施加器与等离子体之间的高度耦合度。 在一些实施例中，使用平衡电压来抑制电容电流以为感应耦合元件供电。

    Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield
    24.
    发明申请
    Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield 审中-公开
    具有掺杂材料屏蔽的电感耦合等离子体离子源室

    公开(公告)号：US20140097752A1

    公开(公告)日：2014-04-10

    申请号：US13647540

    申请日：2012-10-09

    申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

    发明人： Costel Biloui ,  Timonthy J. Miller ,  Bon-Woong Koo ,  Anthony Renau

    IPC分类号： H01J27/16

    CPC分类号： H01J37/32119 ,  H01J27/16 ,  H01J37/32477 ,  H01J37/32651 ,  H01J49/105 ,  H01J2237/0815

    摘要： A plasma ion source including a plasma chamber, gas inlets, an RF antenna, an RF window, an extraction plate, a window shield, and a chamber liner. The RF window may be positioned intermediate the RF antenna and the plasma chamber. The window shield may be disposed intermediate the RF widow and the interior of the plasma chamber and the chamber liner may cover the interior surface of the plasma chamber. During operation of the ion source, the window shield sustains ionic bombardment that would otherwise be sustained by the RF window. Fewer impurity ions are therefore released into the plasma chamber. Simultaneously, additional dopant atoms are released from the window shield into the plasma chamber. Ionic bombardment is also sustained by the chamber liner, which also contributes a quantity of dopant atoms to the plasma chamber. Dopant ion production within the plasma chamber is thereby increased while impurities are minimized.

    摘要翻译： 一种等离子体离子源，包括等离子体室，气体入口，RF天线，RF窗，提取板，窗户屏蔽和室衬垫。 RF窗口可以位于RF天线和等离子体室之间。 窗口屏蔽件可以设置在RF寡围和等离子体室的内部之间，并且腔室衬套可以覆盖等离子体室的内表面。 在离子源操作期间，窗口屏蔽件维持否则由RF窗口维持的离子轰击。 因此，较少的杂质离子被释放到等离子体室中。 同时，另外的掺杂剂原子从窗口屏蔽释放到等离子体室中。 离子轰击也由腔室衬垫维持，这也有助于等离子体室的掺杂剂原子的量。 因此，等离子体室内的掺杂离子产生增加，同时使杂质最小化。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    26.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20120248066A1

    公开(公告)日：2012-10-04

    申请号：US13434802

    申请日：2012-03-29

    申请人： Yohei YAMAZAWA

    发明人： Yohei YAMAZAWA

    IPC分类号： H05H1/46 ,  B44C1/22 ,  B05C13/02

    CPC分类号： H01J37/32697 ,  H01J37/02 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32137 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/3341

    摘要： An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna 54 disposed above a dielectric window 52 is segmented in a diametrical direction into an inner coil 58, an intermediate coil 60, and an outer coil 62 in order to generate inductively coupled plasma. Between a first node NA and a second node NB provided in high frequency transmission lines of the high frequency power supply unit 66, a variable intermediate capacitor 86 and a variable outer capacitor 88 are electrically connected in series to the intermediate coil 60 and the outer coil 62, respectively, and no reactance device is connected to the inner coil 58.

    摘要翻译： 提供电感耦合等离子体处理可以有效且适当地控制处理室中的环形等离子体中的等离子体密度分布。 在电感耦合等离子体处理装置中，设置在电介质窗52之上的RF天线54沿直径方向分割为内线圈58，中间线圈60和外线圈62，以便产生电感耦合等离子体。 在高频电源单元66的高频传输线中提供的第一节点NA和第二节点NB之间，可变中间电容器86和可变外部电容器88串联地电连接到中间线圈60和外部线圈 62，并且没有电抗装置连接到内线圈58。

    Inductively Coupled Plasma Reactor
    28.
    发明申请
    Inductively Coupled Plasma Reactor 审中-公开
    电感耦合等离子体反应器

    公开(公告)号：US20080124254A1

    公开(公告)日：2008-05-29

    申请号：US11751758

    申请日：2007-05-22

    申请人： Dae-Kyu Choi

    发明人： Dae-Kyu Choi

    IPC分类号： B01J19/08

    CPC分类号： H01J37/3266 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32128 ,  H01J37/32137 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32449

    摘要： There is provided a plasma reactor comprising: a vacuum chamber having a substrate support on which a treated substrate is positioned; a gas shower head supplying gas into the interior of the vacuum chamber; a dielectric window installed at an upper portion of the vacuum chamber; and a radio frequency antenna installed above the dielectric window. The gas shower head and the substrate support are capacitively coupled to plasma in the interior of the vacuum chamber and the radio frequency antenna is inductively coupled to the plasma in the interior of the vacuum chamber. The capacitive and inductive coupling of the plasma reactor allows generation of plasma in a large area inside the vacuum chamber more uniformly and more accurate control of plasma ion energy, thereby increasing the yield and the productivity. The plasma reactor includes a magnetic core installed above the dielectric window so that an entrance for a magnetic flux faces the interior of the vacuum chamber and covers the radio frequency antenna. Since the radio frequency antenna is covered by the magnetic core, the magnetic flux can be more strongly collected and the loss of the magnetic flux can be minimized.

    摘要翻译： 提供了一种等离子体反应器，包括：具有基板支撑件的真空室，处理的基板位于该基板支撑件上; 将气体供给到真空室的内部的气体喷头; 安装在真空室的上部的电介质窗; 以及安装在电介质窗口上方的射频天线。 气体喷淋头和衬底支撑件电容耦合到真空室内部的等离子体，并且射频天线感应耦合到真空室内部的等离子体。 等离子体反应器的电容和电感耦合允许在真空室内的大面积内产生等离子体，更均匀和更准确地控制等离子体离子能量，从而提高产率和生产率。 等离子体反应器包括安装在电介质窗口上方的磁芯，使得磁通的入口面向真空室的内部并覆盖射频天线。 由于射频天线被磁芯覆盖，因此可以更强烈地收集磁通量并且可以使磁通量的损失最小化。