利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

34 条记录 (耗时 0.01 秒)

    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
    22.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    制造碳化硅半导体器件的方法

    公开(公告)号：US20130210208A1

    公开(公告)日：2013-08-15

    申请号：US13736582

    申请日：2013-01-08

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Hideki Hayashi ,  Takeyoshi Masuda

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66068 ,  H01L21/02378 ,  H01L21/0445 ,  H01L21/0465 ,  H01L21/047 ,  H01L21/048 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66477 ,  H01L29/7802 ,  H01L29/7813

    摘要： A first layer constituting a first surface of a silicon carbide layer and of a first conductivity type is prepared. An internal trench is formed at a face opposite to the first surface of the first layer. Impurities are implanted such that the conductivity type of the first layer is inverted on the sidewall of the internal trench. By the implantation of impurities, there are formed from the first layer an implantation region located on the sidewall of the internal trench and of a second conductivity type, and a non-implantation region of the first conductivity type. A second layer of the first conductivity type is formed, filling the internal trench, and constituting the first region together with the non-implantation region.

    摘要翻译： 制备构成碳化硅层的第一表面并具有第一导电类型的第一层。 在与第一层的第一表面相对的表面处形成内部沟槽。 植入杂质，使得第一层的导电类型在内部沟槽的侧壁上反转。 通过注入杂质，从第一层形成位于内部沟槽的侧壁和第二导电类型的注入区域以及第一导电类型的非注入区域。 形成第一导电类型的第二层，填充内部沟槽，并与非注入区域一起构成第一区域。

    LATERAL JUNCTION FIELD-EFFECT TRANSISTOR
    24.
    发明申请
    LATERAL JUNCTION FIELD-EFFECT TRANSISTOR 有权
    横向连接场效应晶体管

    公开(公告)号：US20100090259A1

    公开(公告)日：2010-04-15

    申请号：US12517761

    申请日：2007-09-21

    申请人： Takeyoshi Masuda ,  Yasuo Namikawa

    发明人： Takeyoshi Masuda ,  Yasuo Namikawa

    IPC分类号： H01L29/808

    CPC分类号： H01L29/808 ,  H01L21/048 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66901

    摘要： On a p− epitaxial layer, an n-type epitaxial layer and a gate region are formed in this order. A gate electrode is electrically connected to the gate region, and a source electrode and a drain electrode are spaced apart from each other with the gate electrode sandwiched therebetween. A control electrode is used for applying to the p− epitaxial layer a voltage that causes a reverse biased state of the p− epitaxial layer and the n-type epitaxial layer in an OFF operation.

    摘要翻译： 在p-外延层上依次形成n型外延层和栅极区。 栅电极电连接到栅极区，源电极和漏极彼此间隔开，栅电极夹在其间。 控制电极被用于向p-外延层施加一个电压，该电压导致p型外延层和n型外延层在OFF操作中的反向偏压状态。

    Electrode structure of the touch panel, method thereof and touch panel
    28.
    发明授权
    Electrode structure of the touch panel, method thereof and touch panel 有权
    触摸面板的电极结构，方法和触摸面板

    公开(公告)号：US09153385B2

    公开(公告)日：2015-10-06

    申请号：US14184673

    申请日：2014-02-19

    申请人： TPK Touch Solutions (Xiamen) Inc.

    发明人： Jing Yu ,  Huilin Ye ,  Rongwu Wang

    IPC分类号： H01B13/00 ,  H01L21/28 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461 ,  H01G9/048 ,  H01L21/04 ,  G06F3/044

    CPC分类号： H01G9/048 ,  G06F3/044 ,  G06F2203/04111 ,  G06F2203/04112 ,  H01L21/0425 ,  H01L21/044 ,  H01L21/048

    摘要： An electrode structure is provided. The electrode structure comprises a plurality of first conductive cells and second conductive cells separated from each other and disposed on a substrate; a plurality of first conductive lines connecting adjacent said first conductive cells and a plurality of second conductive lines connecting adjacent said second conductive cells; wherein each said second conductive line comprises a conducting element and a pair of second conductive branches disposed at two sides of said conducting elements and connecting said conducting element to adjacent said second conductive cells; said first conductive lines and said second conductive lines are insulated and intersected. The method of forming an electrode structure is also provided.

    摘要翻译： 提供电极结构。 电极结构包括彼此分离并设置在基板上的多个第一导电单元和第二导电单元; 连接邻近所述第一导电单元的多个第一导线和连接邻近所述第二导电单元的多个第二导线; 其中每个所述第二导线包括导电元件和设置在所述导电元件的两侧的一对第二导电分支，并将所述导电元件连接到相邻的所述第二导电单元; 所述第一导线和所述第二导线绝缘并相交。 还提供了形成电极结构的方法。

    Lateral junction field-effect transistor
    29.
    发明授权
    Lateral junction field-effect transistor 有权
    侧面场效应晶体管

    公开(公告)号：US08921903B2

    公开(公告)日：2014-12-30

    申请号：US12517761

    申请日：2007-09-21

    申请人： Takeyoshi Masuda ,  Yasuo Namikawa

    发明人： Takeyoshi Masuda ,  Yasuo Namikawa

    IPC分类号： H01L29/808 ,  H01L29/66 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20

    CPC分类号： H01L29/808 ,  H01L21/048 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66901

    摘要： On a p− epitaxial layer, an n-type epitaxial layer and a gate region are formed in this order. A gate electrode is electrically connected to the gate region, and a source electrode and a drain electrode are spaced apart from each other with the gate electrode sandwiched therebetween. A control electrode is used for applying to the p− epitaxial layer a voltage that causes a reverse biased state of the p− epitaxial layer and the n-type epitaxial layer in an OFF operation.

    摘要翻译： 在p-外延层上依次形成n型外延层和栅极区。 栅电极电连接到栅极区，源电极和漏极彼此间隔开，栅电极夹在其间。 控制电极被用于向p-外延层施加一个电压，该电压导致p型外延层和n型外延层在OFF操作中的反向偏压状态。