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643 条记录 (耗时 0.024 秒)

    Two-zone ion beam carbon deposition
    22.
    发明授权
    Two-zone ion beam carbon deposition 有权
    双区离子束碳沉积

    公开(公告)号：US08008632B2

    公开(公告)日：2011-08-30

    申请号：US12179234

    申请日：2008-07-24

    申请人： Paul Stephen Mcleod ,  Kueir-Weei Chour

    发明人： Paul Stephen Mcleod ,  Kueir-Weei Chour

    IPC分类号： H01J27/00 ,  H01T23/00

    CPC分类号： H01J27/028 ,  G11B5/8408

    摘要： The invention relates an ion source for ion beam deposition comprising multiple anodes, wherein the ion source deposits multiple zones of a source material and thicknesses of at least two of the multiple zones are different.

    摘要翻译： 本发明涉及用于包括多个阳极的离子束沉积的离子源，其中离子源沉积源材料的多个区域，并且多个区域中的至少两个区域的厚度是不同的。

    IONIZATION ANALYSIS METHOD AND APPARATUS
    23.
    发明申请
    IONIZATION ANALYSIS METHOD AND APPARATUS 有权
    离子化分析方法和装置

    公开(公告)号：US20110108726A1

    公开(公告)日：2011-05-12

    申请号：US13001330

    申请日：2009-06-04

    申请人： Kenzo Hiraoka ,  Lee Chuin Chen

    发明人： Kenzo Hiraoka ,  Lee Chuin Chen

    IPC分类号： H01J49/00 ,  H01J27/00

    CPC分类号： H01J49/142 ,  H01J49/165 ,  H05H1/2406 ,  H05H2001/2443

    摘要： It is arranged so that ions can be analyzed accurately and with high sensitivity. A first electrode 11 is provided on the outer periphery of a dielectric cylindrical body 13 and a second electrode 12 is placed inside the cylindrical body 13 leaving a clearance between itself and the inner surface of the cylindrical body 13. When an AC high voltage is impressed across the first electrode 11 and second electrode 12, a barrier discharge occurs within the cylindrical body 13. When a distal end portion 12a of the second electrode 12 projects outwardly from the distal end of the cylindrical body 13, a thermal equilibrium plasma P having a low electron temperature is generated outwardly of the distal end of the cylindrical body 13 without a plasma jet ascribable to the barrier discharge emerging outwardly from the distal end of the cylindrical body 13. By exposing a sample S to the thermal equilibrium plasma P, particles (atoms, molecules) desorbed from the sample S undergo soft ionization without being decomposed or polymerized. The ions generated are introduced to a mass analyzer 50.

    摘要翻译： 这样可以精确地，高灵敏度地分析离子。 第一电极11设置在电介质筒体13的外周，第二电极12放置在圆筒体13的内部，在其本身与圆柱体13的内表面之间留有间隙。当施加交流高压时 在第一电极11和第二电极12之间，在圆柱体13内发生阻挡放电。当第二电极12的远端部分12a从圆柱体13的远端向外突出时，具有 在圆柱体13的远端外部产生低电子温度，而不产生等离子体射流，这种等离子体射流可归因于从圆柱体13的远端向外露出的阻挡放电。通过将样品S暴露于热平衡等离子体P， 从样品S解吸的原子，分子）进行软电离而不分解或聚合。 所产生的离子被引入质量分析器50。

    Ion generating apparatus and method of removing a fluorine compound deposited in a source housing thereof
    24.
    发明申请
    Ion generating apparatus and method of removing a fluorine compound deposited in a source housing thereof 有权
    离子发生装置和除去沉积在其源壳体中的氟化合物的方法

    公开(公告)号：US20110062346A1

    公开(公告)日：2011-03-17

    申请号：US12807852

    申请日：2010-09-15

    申请人： Kiyohiro Tsuru

    发明人： Kiyohiro Tsuru

    IPC分类号： H01J27/00 ,  B08B7/00

    CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J2237/022

    摘要： Provided is an ion generating apparatus. The ion generating apparatus includes opposed electrodes connected to a high-frequency power supply, and hence, even in a case where a cathode filament is broken, hydride gas can be ionized to generate hydrogen ion. Thus, a fluorine compound deposited in a source housing is reduced in vacuum, and gas containing fluorine generated due to the above-mentioned reduction reaction is discharged with a vacuum pump.

    摘要翻译： 提供了一种离子产生装置。 离子发生装置包括与高频电源连接的相对电极，因此即使在阴极灯丝断裂的情况下，也可以将氢化物气体离子化而产生氢离子。 因此，沉积在源壳体中的氟化合物在真空中减少，并且由于上述还原反应而产生的含氟气体用真空泵排出。

    INDIRECT HEATED CATHODE OF ION IMPLANTER
    25.
    发明申请
    INDIRECT HEATED CATHODE OF ION IMPLANTER 审中-公开
    离子植入物的间接加热阴极

    公开(公告)号：US20110018423A1

    公开(公告)日：2011-01-27

    申请号：US12509753

    申请日：2009-07-27

    申请人： Terry SHENG ,  Linnan CHEN ,  Jason HONG

    发明人： Terry SHENG ,  Linnan CHEN ,  Jason HONG

    IPC分类号： H01J17/26 ,  H01J27/00

    CPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082

    摘要： A proposed indirect heated cathode has an inner tubular shell inserted into an arc chamber for creating plasma by a filament, which is disposed in the inner tubular shell and then covered by an end cap. There are at least two outstanding talons disposed on the end surface of the inner tubular shell, and a step gap is configured on between the end surface of the inner tubular shell and the outstanding talons. The end cap can be lodged into the step gap, and fixed. Therefore, the end cap can be easily uncovered from the end of the inner tubular shell, as a result to simplify the replacement of the filament.

    摘要翻译： 所提出的间接加热阴极具有插入到电弧室中的内管状壳体，用于通过细丝产生等离子体，灯丝设置在内管壳中，然后被端盖覆盖。 在内管壳的端面上设置有至少两个突出的爪，并且在内筒管的端面与突出的爪之间构成台阶间隙。 端盖可以放入台阶间隙并固定。 因此，端盖可以容易地从内部管状壳体的端部露出，从而简化了灯丝的更换。

    Focused negative ion beam field source
    26.
    发明授权
    Focused negative ion beam field source 有权
    聚焦负离子束场源

    公开(公告)号：US07863581B2

    公开(公告)日：2011-01-04

    申请号：US12135464

    申请日：2008-06-09

    申请人： Paulo Lozano ,  Manuel Martinez-Sanchez

    发明人： Paulo Lozano ,  Manuel Martinez-Sanchez

    IPC分类号： H01J27/00

    CPC分类号： H01J37/08 ,  H01J27/028 ,  H01J27/26 ,  H01J2237/0048 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31749

    摘要： An apparatus for producing negative ions including an emitter coated with an ionic liquid room-temperature molten salt, an electrode positioned downstream relative to the emitter, a power supply that applies a voltage to the emitter with respect to the electrode. The power supply is sufficient to generate a stable high brightness beam of negative ions having minimal chromatic and spherical aberrations in the beam. An electrostatic lens and deflector is used to focus and direct the beam to a target.

    摘要翻译： 一种用于产生负离子的装置，包括涂覆有离子液体室温熔融盐的发射体，位于发射极下游的电极，相对于电极向发射极施加电压的电源。 电源足以产生稳定的高亮度的负离子束，该束具有在光束中最小的色差和球面像差。 静电透镜和偏转器用于聚焦并将光束引导到目标。

    System and method of controlling broad beam uniformity
    27.
    发明授权
    System and method of controlling broad beam uniformity 有权
    控制宽光束均匀性的系统和方法

    公开(公告)号：US07858955B2

    公开(公告)日：2010-12-28

    申请号：US12145713

    申请日：2008-06-25

    申请人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

    发明人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

    IPC分类号： H01J27/02 ,  H01J27/00

    CPC分类号： H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

    摘要： An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

    摘要翻译： 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ，并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

    Dual mode ion source for ion implantation
    28.
    发明授权
    Dual mode ion source for ion implantation 有权
    用于离子注入的双模离子源

    公开(公告)号：US07838842B2

    公开(公告)日：2010-11-23

    申请号：US11268005

    申请日：2005-11-07

    申请人： Thomas N. Horsky

    发明人： Thomas N. Horsky

    IPC分类号： H01J27/00 ,  H05B31/26

    CPC分类号： C23C14/48 ,  H01J27/026 ,  H01J27/08 ,  H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/31701 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

    摘要： An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+ or As4+, or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomers implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

    摘要翻译： 公开了一种离子源，用于提供由诸如B 2 H x +，B 5 H x +，B 10 H x +，B 18 H x +，P 4 +或As 4+的离子化簇或诸如Ge +，In +，Sb +，B +，As +和P + ，以使集群植入物和单体植入物进入硅衬底以制造CMOS器件，并以高生产率进行。 离子束的范围由根据本发明的通用离子源产生，其被配置为以两种离散模式操作：电子冲击模式，其有效地产生离子簇，以及电弧放电模式，其有效地产生单体离子 。