公开(公告)号：US20090321657A1

公开(公告)日：2009-12-31

申请号：US12145713

申请日：2008-06-25

申请人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

发明人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

IPC分类号： H01J27/02 ,  H01J27/00

CPC分类号： H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

摘要： An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

摘要翻译： 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ，并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

公开(公告)号：US07858955B2

公开(公告)日：2010-12-28

申请号：US12145713

申请日：2008-06-25

申请人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

发明人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

IPC分类号： H01J27/02 ,  H01J27/00

CPC分类号： H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

摘要： An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

摘要翻译： 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ，并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

公开(公告)号：US08963107B2

公开(公告)日：2015-02-24

申请号：US13348855

申请日：2012-01-12

申请人： Edward C. Eisner ,  Bo H. Vanderberg

发明人： Edward C. Eisner ,  Bo H. Vanderberg

IPC分类号： G01K5/00 ,  H01J37/147

CPC分类号： H01J37/147 ,  G01K5/00 ,  H01J37/05 ,  H01J37/16 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

摘要： Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.

摘要翻译： 可以将用于减少能量污染的方法和装置提供给用于离子注入的束线组件。 包括其间的表面区域和凹槽的突起可以在来自光束线组件内的工件的视线范围内面对中性轨迹。 突起可以改变中性轨迹离开工件的过程，或者在撞击工件之前引起交替的轨迹以进一步冲击，从而进一步减少更敏感的植入物的能量污染。

公开(公告)号：US08421039B2

公开(公告)日：2013-04-16

申请号：US13077329

申请日：2011-03-31

申请人： Edward C. Eisner

发明人： Edward C. Eisner

IPC分类号： G21K5/10 ,  H01J3/12

CPC分类号： H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

摘要： The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

摘要翻译： 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US08378313B2

公开(公告)日：2013-02-19

申请号：US13077112

申请日：2011-03-31

申请人： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

发明人： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC分类号： H01J3/26 ,  H01J37/147

CPC分类号： H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

摘要： One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

摘要翻译： 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

公开(公告)号：US20080061228A1

公开(公告)日：2008-03-13

申请号：US11716622

申请日：2007-03-09

申请人： Bo H. Vanderberg ,  Edward C. Eisner

发明人： Bo H. Vanderberg ,  Edward C. Eisner

IPC分类号： G21K1/093

CPC分类号： H01J37/3171 ,  H01J37/1471 ,  H01J37/1472 ,  H01J2237/24528

摘要： An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

公开(公告)号：US08803110B2

公开(公告)日：2014-08-12

申请号：US11541087

申请日：2006-09-29

申请人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

发明人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC分类号： H01J37/317 ,  H01L21/265 ,  H01J37/32

CPC分类号： H01J37/3233 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32935 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01L21/265

摘要： Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.

摘要翻译： 通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。 离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。 确定射束电流调节量。 然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。 提供具有调制束电流的束电流。

公开(公告)号：US20120248326A1

公开(公告)日：2012-10-04

申请号：US13077112

申请日：2011-03-31

申请人： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

发明人： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC分类号： H01J3/14 ,  G21K5/10

CPC分类号： H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

摘要： One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

摘要翻译： 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

公开(公告)号：US20110272567A1

公开(公告)日：2011-11-10

申请号：US12774037

申请日：2010-05-05

申请人： Edward C. Eisner ,  Bo Vanderberg

发明人： Edward C. Eisner ,  Bo Vanderberg

IPC分类号： H01J37/317 ,  G12B13/00

CPC分类号： H01J37/3171 ,  H01J37/1472 ,  H01J37/3026 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

摘要： Some aspects of the present disclosure increase throughput beyond what has previously been achievable by changing the scan rate of a scanned ion beam before the entire cross-sectional area of the ion beam extends beyond an edge of a workpiece. In this manner, the techniques disclosed herein help provide greater throughput than what has previously been achievable. In addition, some embodiments can utilize a rectangular (or other non-circularly shaped) scan pattern that allows real-time beam flux measurements to be taken off-wafer during actual implantation. In these embodiments, the workpiece implantation routine can be changed in real-time to account for real-time changes in beam flux. In this manner, the techniques disclosed herein help provide improved throughput and more accurate dosing profiles for workpieces than previously achievable.

摘要翻译： 本公开的一些方面通过在离子束的整个横截面积延伸超过工件的边缘之前改变扫描离子束的扫描速率而增加了超过先前可实现的吞吐量。 以这种方式，本文公开的技术有助于提供比先前可实现的更大的吞吐量。 此外，一些实施例可以利用允许实际光束通量测量在实际植入期间离开晶片的矩形（或其它非圆形）扫描图案。 在这些实施例中，可以实时地改变工件注入程序以考虑光束通量的实时变化。 以这种方式，本文公开的技术有助于为先前可实现的工件提供改善的生产量和更准确的工件配量曲线。

公开(公告)号：US07615763B2

公开(公告)日：2009-11-10

申请号：US11523148

申请日：2006-09-19

申请人： Bo H. Vanderberg ,  Robert D. Rathmell ,  Edward C. Eisner

发明人： Bo H. Vanderberg ,  Robert D. Rathmell ,  Edward C. Eisner

IPC分类号： H01J37/317

CPC分类号： H01J37/026 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/055

摘要： A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.

摘要翻译： 磁扫描仪采用恒定磁场来减轻零场效应。 该扫描器包括上极片和下极片，其在离子束的路径上产生振荡时变磁场并使扫描方向偏转离子束。 一组入口磁体围绕扫描器的入口定位，并且在离子束的路径上产生恒定的入射磁场。 一组出口磁体围绕扫描器的出口定位，并在离子束的路径上产生恒定的出射磁场。