System and method of controlling broad beam uniformity
    1.
    发明授权
    System and method of controlling broad beam uniformity 有权
    控制宽光束均匀性的系统和方法

    公开(公告)号:US07858955B2

    公开(公告)日:2010-12-28

    申请号:US12145713

    申请日:2008-06-25

    IPC分类号: H01J27/02 H01J27/00

    摘要: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

    摘要翻译: 一种离子束均匀性控制系统,其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室,其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ,并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数,其中使用产生磁场的偏转器去除宽离子束的电荷交换部分, 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流,以获得所需的宽离子束。

    SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY
    2.
    发明申请
    SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY 有权
    控制广播光束均匀性的系统和方法

    公开(公告)号:US20090321657A1

    公开(公告)日:2009-12-31

    申请号:US12145713

    申请日:2008-06-25

    IPC分类号: H01J27/02 H01J27/00

    摘要: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

    摘要翻译: 一种离子束均匀性控制系统,其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室,其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ,并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数,其中使用产生磁场的偏转器去除宽离子束的电荷交换部分, 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流,以获得所需的宽离子束。

    Broad ribbon beam ion implanter architecture with high mass-energy capability
    3.
    发明授权
    Broad ribbon beam ion implanter architecture with high mass-energy capability 有权
    具有高质量能量能力的宽带束离子注入架构

    公开(公告)号:US07705328B2

    公开(公告)日:2010-04-27

    申请号:US11932117

    申请日:2007-10-31

    IPC分类号: G21K5/10 H01J37/08

    摘要: A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).

    摘要翻译: 一种带状离子束系统,包括被配置为沿着第一光束路径产生带状离子束的离子源,其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸(h1)和长尺寸(w1)的质量分析磁体 其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束,其中离开质量分析的带状离子束 磁体在非分散xz平面中发散并且在xy平面中收敛,质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类,角度校正装置被配置为 将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中,并沿着第三层在xy平面中分散带状离子束 光束路径,并且其中所述平行带状束具有可变高度(h2)和长尺寸宽度(w2)。

    BROAD RIBBON BEAM ION IMPLANTER ARCHITECTURE WITH HIGH MASS-ENERGY CAPABILITY
    4.
    发明申请
    BROAD RIBBON BEAM ION IMPLANTER ARCHITECTURE WITH HIGH MASS-ENERGY CAPABILITY 有权
    具有高能量能力的BROAD RIBBON BEAM离子植绒建筑

    公开(公告)号:US20090108198A1

    公开(公告)日:2009-04-30

    申请号:US11932117

    申请日:2007-10-31

    IPC分类号: H01J49/30

    摘要: A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).

    摘要翻译: 一种带状离子束系统,包括被配置为沿着第一光束路径产生带状离子束的离子源,其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸(h1)和长尺寸(w1)的质量分析磁体 其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束,其中离开质量分析的带状离子束 磁体在非分散xz平面中发散并且在xy平面中收敛,质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类,角度校正装置被配置为 将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中,并沿着第三层在xy平面中分散带状离子束 光束路径,并且其中所述平行带状束具有可变高度(h2)和长尺寸宽度(w2)。

    Ion implanter having combined hybrid and double mechanical scan architecture
    7.
    发明授权
    Ion implanter having combined hybrid and double mechanical scan architecture 有权
    离子注入机具有组合的混合和双机械扫描架构

    公开(公告)号:US08124947B2

    公开(公告)日:2012-02-28

    申请号:US12554277

    申请日:2009-09-04

    IPC分类号: H01J37/317 H01J29/51 G21K1/08

    摘要: A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

    摘要翻译: 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量,并且由离子源形成点离子束,并通过质量分析器进行质量分析。 基于所需的离子剂量,将离子以第一模式和第二模式中的一种注入到工件中,其中在第一模式中,离子束由位于质量分析器下游的束扫描系统扫描,并由 位于光束扫描系统下游的并联器。 在第一模式中,工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中,离子束通过光束扫描系统,并行扫描未扫描,工件通过点离子束二维扫描。

    Wafer handling apparatus and method

    公开(公告)号:US07059817B2

    公开(公告)日:2006-06-13

    申请号:US10307022

    申请日:2002-11-27

    IPC分类号: B65G49/07

    摘要: A high-speed wafer-processing apparatus and method that employs a vacuum chamber having at least two wafer transport robots and a process station. The vacuum chamber interfaces with a number of single-wafer load locks that are loaded and unloaded one wafer at a time by a robot in atmosphere. Four load locks are sized to allow for a gentle vacuum cycling of each wafer without significant pumpdown delays. The robots in the vacuum chamber move wafers sequentially from one of the load locks to a process station for processing and then to another one of the load locks for unloading by the atmospheric robot.

    Ion implanter having combined hybrid and double mechanical scan architecture
    9.
    发明授权
    Ion implanter having combined hybrid and double mechanical scan architecture 有权
    离子注入机具有组合的混合和双机械扫描架构

    公开(公告)号:US07586111B2

    公开(公告)日:2009-09-08

    申请号:US11831744

    申请日:2007-07-31

    IPC分类号: H01J37/317 H01J29/51 G21K1/08

    摘要: A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

    摘要翻译: 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量,并且由离子源形成点离子束,并通过质量分析器进行质量分析。 基于所需的离子剂量,将离子以第一模式和第二模式中的一种注入到工件中,其中在第一模式中,离子束由位于质量分析器下游的束扫描系统扫描,并由 位于光束扫描系统下游的并联器。 在第一模式中,工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中,离子束通过光束扫描系统,并行扫描未扫描,工件通过点离子束二维扫描。

    ION IMPLANTER HAVING COMBINED HYBRID AND DOUBLE MECHANICAL SCAN ARCHITECTURE
    10.
    发明申请
    ION IMPLANTER HAVING COMBINED HYBRID AND DOUBLE MECHANICAL SCAN ARCHITECTURE 有权
    具有组合混合和双机械扫描架构的离子植绒

    公开(公告)号:US20090032726A1

    公开(公告)日:2009-02-05

    申请号:US11831744

    申请日:2007-07-31

    IPC分类号: H01J37/20

    摘要: A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

    摘要翻译: 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量,并且由离子源形成点离子束,并通过质量分析器进行质量分析。 基于所需的离子剂量,将离子以第一模式和第二模式中的一种注入到工件中,其中在第一模式中,离子束被位于质量分析器下游的束扫描系统扫描,并由 位于光束扫描系统下游的并联器。 在第一模式中,工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中,离子束通过光束扫描系统,并行扫描未扫描,工件通过点离子束二维扫描。