Abstract:
A graphics display adapter has a row interpolator circuit connected to receive the source pixel data synchronized at a first clock rate and to interpolate groups of pixels of row at a second clock rate. A row interpolated storage device receives and retains interpolated source pixel data of each row at the second clock rate. A column interpolator circuit extracts the interpolated source pixel data at a third clock rate. The column interpolator circuit then interpolates groupings of the interpolated source pixel data at the third clock rate and transmits the destination graphic pixel data for display. The second clock rate maybe equal to the first clock rate or the faster of the first and third clock rates.
Abstract:
A system and a method for control of fan rotational speed are applied in an electronic device with a fan for temperature adjustment. The electronic device at least records a first fan rotational speed of the fan when a temperature of the fan is higher than a predetermined temperature interval and a second fan rotational speed of the fan when the temperature of the fan is lower than the temperature interval. A fan rotational speed during operation of the fan is recorded. The electronic device detects a temperature of an exothermic object being adjusted by the fan, and outputs a temperature parameter. The electronic device determines whether the temperature parameter belongs to the temperature interval and accordingly adjusts the fan rotational speed of the fan. The system and method make change of the fan rotational speed less sensitive to oscillations in system temperature and prolong the lifetime of the fan.
Abstract:
Retention-enhanced, programmable, shared floating gate logic circuits are employed as NVM cells. In one embodiment, the NVM cell is formed by a dual transistor logic gate circuit with a shared floating gate. The logic circuit is an inverter. The shared floating gate is doped partially or completely with p-type impurities to enhance retention. A charge adjustment circuit is arranged to inject and remove electrons to and from the shared floating gate determining the output of the logic gate circuit when supply voltage is applied to the logic gate circuit. In another embodiment, four transistors are employed to form another logic circuit such as a NOR gate or a NAND gate.
Abstract:
Methods of introducing genetic material into cells of an individual and compositions and kits for practicing the same are disclosed. The methods comprise the steps of contacting cells of an individual with a polynucleotide function enhancer and administering to the cells, a nucleic acid molecule that is free of retroviral particles. The nucleic acid molecule comprises a nucleotide sequence that encodes a protein that comprises at least one epitope that is identical or substantially similar to an epitope of a pathogen antigen or an antigen associated with a hyperproliferative or autoimmune disease, a protein otherwise missing from the individual due to a missing, non-functional or partially functioning gene, or a protein that produces a therapeutic effect on an individual. Methods of prophylactically and therapeutically immunizing an individual against HIV am disclosed. Pharmaceutical compositions and kits for practicing methods of the present invention are disclosed.
Abstract:
NVM arrays include rows and columns of NVM cells comprising a floating gate, dual transistor, inverter storage element. Supply voltage for selected storage elements is turned off during a programming and an erase mode. Isolation transistors for each NVM cell or for each row of NVM cells may be used to control the supply voltage.
Abstract:
An integrated circuit formed on a semiconductor substrate having multiple input/output signal paths such that the semiconductor substrate can be mounted to more than one package type. The integrated circuit formed on the semiconductor substrate has at least three pluralities of input output connector pads. The first plurality of input/output connector pads is placed on the semiconductor substrate and is attached to a first functional circuit of the integrated circuit. The second and third pluralities of input/output connector pads are placed on the semiconductor substrate and are attached to a second functional circuit of the integrated circuit. The third plurality of input/output connector pads is placed in an area separated from the first and second pluralities of input/output connector pads. Each input/output connector pads of the third plurality of input/output connector pads is connected to a corresponding input/output connector pad of the second plurality of input/output connector pads and thus to the second functional circuit. If the semiconductor substrate is mounted in a first package type, the second plurality of input/output connector pads is bonded to pins of the first package type to connect the second functional circuit to the external circuit, and the third plurality of input/output connector pads remain unbonded. If the semiconductor substrate is mounted in a second package type, the third plurality of input/output connector pads is bonded to pins of the second package type to connect the second functional circuit to the external circuit and the second plurality of input/output connector pads remain unbonded.
Abstract:
Methods of introducing genetic material into cells of an individual and compositions and kits for practicing the same are disclosed. The methods comprise the steps of contacting cells of an individual with a genetic vaccine facilitator and administering to the cells, a nucleic acid molecule that is free of retroviral particles. The nucleic acid molecule comprises a nucleotide sequence that encodes a protein that comprises at least one epitope that is identical or substantially similar to an epitope of a pathogen antigen or an antigen associated with a hyperproliferative or autoimmune disease, a protein otherwise missing from the individual due to a missing, non-functional or partially functioning gene, or a protein that produce a therapeutic effect on an individual. Methods of prophylactically and therapeutically immunizing an individual against HIV are disclosed. Pharmaceutical compositions and kits for practicing methods of the present invention are disclosed.
Abstract:
Circuits and a method are disclosed for a semiconductor memory which decode from a system supplied input address two outputs which are either adjacent or boundary adjacent to each other. The two decoded outputs derived from the input address select then, in one cycle, two locations in a Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM). The circuits producing the two decoded outputs allow for sequential and interleaved mode, for data bursts of various lengths, and for addressing of redundant columns.
Abstract:
A fast CMOS sense amplifier for semiconductor memories is disclosed. The memory sense amplifier configuration is comprised of differential pre-sense amplifier stage and a sense amplifier second stage. The pre-sense amplifier stage is composed of two sections with feedback between the sections which reduces the output swing by means of a clamping action, therefore improving output switching recovery time in response to differential input. The feedback between the sections is provided by cross connecting the sub outputs of each section to the gate of a clamping transistor at each section. The reduced recovery time produces reduced delay at the output which speeds up the operation of the sense amplifier. Additionally, the clamping devices have the effect of reducing the average DC current in the pre-sense amplifier.
Abstract:
A method of depositing a polymer film onto a semiconductor wafer is provided which includes the steps of connecting the wafer to one terminal of a voltage source, connecting an electrode to an other pole of the voltage source and placing the electrode and substrate in superposed orientation to form a parallel plate capacitor, wherein an electric field is produced between the electrode and substrate. The parallel plate capacitor is placed in a chamber where pressure andc temperature are maintained at predetermined levels and gaseous monomers of the desired film to be polymerized are introduced into the chamber. The gaseous monomers are then permitted to flow between the electrode and wafer while the voltage of the electric field is maintained at a level sufficient to polarize the monomers without breaking their chemical bonds wherein the polarized monomers react to form a polymer film on the wafer at an enhanced rate.