公开(公告)号：US08385446B2

公开(公告)日：2013-02-26

申请号：US12384156

申请日：2009-04-01

Applicant: Jong-Ho Lee ,  Joo-Hyun Lee ,  Sung-Hwan Kim ,  Jong-Hyeuk Lee ,  Sung-Yoon Jung ,  Chungyong Lee ,  Jaesang Ham ,  Myoung-Seok Kim

Inventor： Jong-Ho Lee ,  Joo-Hyun Lee ,  Sung-Hwan Kim ,  Jong-Hyeuk Lee ,  Sung-Yoon Jung ,  Chungyong Lee ,  Jaesang Ham ,  Myoung-Seok Kim

IPC: H04L5/12

CPC classification number: H04L27/2614 ,  H04L5/0007 ,  H04L25/0202 ,  H04L25/03178 ,  H04L25/0321 ,  H04L25/03229

Abstract: A receiving apparatus and method of a Maximum Likelihood (ML) scheme in a Single-Carrier (SC) system are provided. The apparatus includes at least two antennas, at least two Orthogonal Frequency Division Multiplexing (OFDM) demodulators, at least two subcarrier mappers, at least two OFDM modulators, and a detector. The antennas receive signals. The OFDM demodulators convert the signals into frequency domain signals. The subcarrier mappers confirm signals mapped to frequency domain subcarriers. The OFDM modulators convert the signals into time domain signals. The detector constructs at least one set for candidate transmission symbols and detects receive signals through ML detection using the set.

公开(公告)号：US08314465B2

公开(公告)日：2012-11-20

申请号：US13039811

申请日：2011-03-03

Applicant: Jong-Ho Lee ,  Nae-In Lee

Inventor： Jong-Ho Lee ,  Nae-In Lee

IPC: H01L29/76

CPC classification number: H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02192 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7881 ,  H01L29/94

Abstract: A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.

Abstract translation: 半导体器件包括硅酸盐界面层和覆盖硅酸盐界面层的高k电介质层。 高k电介质层包括金属合金氧化物。

公开(公告)号：US08304336B2

公开(公告)日：2012-11-06

申请号：US12605162

申请日：2009-10-23

Applicant: Chaehwan Jeong ,  Jong Ho Lee ,  Ho-Sung Kim ,  Seongjae Boo

Inventor： Chaehwan Jeong ,  Jong Ho Lee ,  Ho-Sung Kim ,  Seongjae Boo

IPC: H01L21/44

CPC classification number: H01L21/02381 ,  C23C16/24 ,  C23C16/507 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.

Abstract translation: 一种使用包括第一电极，P层，本征层，N型层和第二电极的电感耦合等离子体化学气相沉积（ICP-CVD）制造太阳能电池的方法。 该方法包括通过使用包含氢（H 2）气和硅烷（SiH 4）气体的混合气体的电感耦合等离子体化学气相沉积（ICP-CVD）装置形成包括氢化非晶硅（Si）薄膜的本征层。 在混合气体中，相对于混合气体，硅烷气体的比率为8〜10。

公开(公告)号：US20120259932A1

公开(公告)日：2012-10-11

申请号：US13438889

申请日：2012-04-04

Applicant: Min-kyoung KANG ,  Sung-wook AHN ,  Eun NAMGUNG ,  Jong-ho LEE

Inventor： Min-kyoung KANG ,  Sung-wook AHN ,  Eun NAMGUNG ,  Jong-ho LEE

IPC: G06F15/16

CPC classification number: H04L51/38 ,  H04L51/066

Abstract: A message to be transmitted is converted into an image file. The image file is stored and location information about a location where the image file is stored, is generated. The image file is transmitted to at least one device based on the location information.

Abstract translation: 要发送的消息被转换为图像文件。 存储图像文件，并生成有关存储图像文件的位置的位置信息。 基于位置信息将图像文件发送到至少一个设备。

公开(公告)号：US08283245B2

公开(公告)日：2012-10-09

申请号：US13312020

申请日：2011-12-06

Applicant: Chaehwan Jeong ,  Jong Ho Lee ,  Ho-Sung Kim ,  Seongjae Boo

Inventor： Chaehwan Jeong ,  Jong Ho Lee ,  Ho-Sung Kim ,  Seongjae Boo

IPC: H01L21/44

CPC classification number: H01L21/02381 ,  C23C16/24 ,  C23C16/507 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. At least one of the second-type layer, the intrinsic layer and the first-type layer is formed as a crystallized Si layer by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas, the mixed gas having a silane gas (SiH4) in a ratio of 0.016 to 0.02.

Abstract translation: 在一个实例中，公开了一种制造包括第一电极，第一类型层，本征层，第二类型层和第二电极的太阳能电池的方法。 通过使用包含氢（H 2）气体的混合气体的电感耦合等离子体化学气相沉积（ICP-CVD）装置将第二类型层，本征层和第一类型层中的至少一个形成为结晶化的Si层， 硅烷（SiH 4）气体，混合气体的硅烷气体（SiH4）的比例为0.016〜0.02。

公开(公告)号：US08275076B2

公开(公告)日：2012-09-25

申请号：US12386299

申请日：2009-04-16

Applicant: Sung-Yoon Jung ,  Sung-Soo Hwang ,  Joo-Hyun Lee ,  Jong-Ho Lee ,  Sung-Hwan Kim ,  Jong-Soo Seo ,  Jong-Kyung Kim ,  Jin-Yong Choi

Inventor： Sung-Yoon Jung ,  Sung-Soo Hwang ,  Joo-Hyun Lee ,  Jong-Ho Lee ,  Sung-Hwan Kim ,  Jong-Soo Seo ,  Jong-Kyung Kim ,  Jin-Yong Choi

IPC: H04L27/06

CPC classification number: H04B7/0854 ,  H04L25/03038

Abstract: Provided are a receiver and a method for detecting a signal in a multiple antenna system. The receiver includes a filter coefficient calculator and a signal detector. After separating a first signal portion and a second signal portion, the filter coefficient calculator calculates an MMSE filter coefficient using a Matrix Inversion Lemma such that an inverse matrix of the first signal portion has a predetermined constant value regardless of a repetition signal detection process. The signal detector detects a relevant transmission signal from an interference-removed reception signal using the MMSE filter coefficient.

Abstract translation: 提供了一种用于检测多天线系统中的信号的接收机和方法。 接收机包括滤波器系数计算器和信号检测器。 在分离第一信号部分和第二信号部分之后，滤波器系数计算器使用矩阵反转引理来计算MMSE滤波器系数，使得第一信号部分的逆矩阵具有预定的常数值，而与重复信号检测处理无关。 信号检测器使用MMSE滤波器系数从去除干扰的接收信号检测相关的发送信号。

公开(公告)号：US08252674B2

公开(公告)日：2012-08-28

申请号：US13195935

申请日：2011-08-02

Applicant: Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

Inventor： Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

IPC: H01L21/3205

CPC classification number: H01L21/28185 ,  H01L21/28079 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

Abstract: Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.

Abstract translation: 提供了在通道区​​域上包括多层电介质膜的晶体管。 多层电介质包括下电介质膜，该电介质膜的厚度至少为多层电介质膜的厚度的50％，并且包括金属氧化物，金属硅酸盐，铝酸盐或其混合物，以及上电介质膜 在下介电膜上，上电介质膜包含III族金属氧化物，III族金属氮化物，第ⅩⅢ族金属氧化物或第ⅩⅢ族金属氮化物。 在多层电介质膜上设置栅电极。

公开(公告)号：US20120196831A1

公开(公告)日：2012-08-02

申请号：US13500843

申请日：2010-10-08

Applicant: Gyoon-Hee Han ,  Yong Seok Choi ,  Sang-Bae Han ,  Jong-Ho Lee ,  Hwan-Mook Kim ,  Song-Kyu Park ,  Ki-Ho Lee ,  Jong-Soon Kang ,  Ki-Hoon Lee ,  Chang-Woo Lee

Inventor： Gyoon-Hee Han ,  Yong Seok Choi ,  Sang-Bae Han ,  Jong-Ho Lee ,  Hwan-Mook Kim ,  Song-Kyu Park ,  Ki-Ho Lee ,  Jong-Soon Kang ,  Ki-Hoon Lee ,  Chang-Woo Lee

IPC: A61K31/724 ,  A61P3/04 ,  A61P9/12 ,  A61P3/10 ,  A61P9/10 ,  A61P9/00 ,  A61P25/00 ,  C08B37/16 ,  A61P3/06

CPC classification number: A61K31/724 ,  A23L29/35 ,  A23L33/10 ,  A23V2002/00 ,  A23V2200/328 ,  A23V2200/332 ,  A23V2250/5112

Abstract: There is provided a composition for preventing and treating obesity including high water-soluble β-cyclodextrin derivatives as an effective component. Specifically, the composition including the high water-soluble β-cyclodextrin derivatives, especially, 2-hydroxypropyl-β-cyclodextrin (HP-β-CD, HPBCD) has effects on suppressing an increase in body weight induced by a high fat diet, suppressing appetite through decreasing an amount of dietary intake, decreasing body fat, decreasing liver weight, and significantly decreasing a sharp increase of blood sugar induced by intaking glucose and maltose on an empty stomach so that it can be useful for preventing and treating obesity, preventing and treating various diseases induced by obesity, and suppressing a sharp increase of blood sugar after dinner.

Abstract translation: 提供了用于预防和治疗包括高水溶性和环糊精衍生物作为有效成分的肥胖的组合物。 具体地说，包含高水溶性β-环糊精衍生物，特别是2-羟丙基 - 环糊精（HP-＆bgr-CD，HPBCD）的组合物具有抑制高脂肪引起的体重增加的作用 饮食，通过减少饮食摄入量，减少身体脂肪，减少肝脏重量并显着降低通过在空腹进食葡萄糖和麦芽糖而引起的血糖的急剧增加，从而抑制食欲，从而可用于预防和治疗肥胖 预防和治疗肥胖引起的各种疾病，抑制晚饭后血糖急剧增加。

公开(公告)号：US20120015279A1

公开(公告)日：2012-01-19

申请号：US13176216

申请日：2011-07-05

Applicant: Ji-Won SON ,  Hae-Weon LEE ,  Chang Woo KWON ,  Ki-Bum KIM ,  Jong Ho LEE

Inventor： Ji-Won SON ,  Hae-Weon LEE ,  Chang Woo KWON ,  Ki-Bum KIM ,  Jong Ho LEE

IPC: H01M8/10 ,  B05D5/12 ,  H01M8/00 ,  C23C16/44 ,  B32B3/10 ,  B05D1/36

CPC classification number: C23C16/0272 ,  C23C16/45555 ,  H01M4/9058 ,  H01M8/1253 ,  H01M8/1286 ,  H01M2008/1293 ,  Y02E60/525 ,  Y02P70/56 ,  Y10T428/24331

Abstract: Disclosed is a dense thin film, a fuel cell using the same and fabrication methods thereof. A method for fabricating a dense thin film comprises (1) forming a first thin film on a porous surface, and (2) forming, on a surface of the first thin film, a second thin film made of a homogeneous material with respect to the first thin film, thereby removing pinholes of the first thin film. The method for fabricating a dense thin film may comprise (1′) forming a first thin film on a porous surface, (2′) forming, on a surface of the first thin film, a second thin film made of a to heterogeneous material with respect to the first thin film, thereby removing pinholes of the first thin film, and (3′) etching a surface of the second thin film. A dense thin film comprises a porous material, a first thin film formed on a surface of the porous material and having pinholes, a blocking material including a homogeneous or heterogeneous material with respect to the first thin film and configured to block the pinholes, and a second thin film including a homogeneous or heterogeneous material with respect to the first thin film and formed on a surface of the first thin film.

Abstract translation: 公开了一种致密薄膜，使用该薄膜的燃料电池及其制造方法。 一种制造致密薄膜的方法包括：（1）在多孔表面上形成第一薄膜，以及（2）在第一薄膜的表面上形成第二薄膜，该薄膜由均匀材料制成，相对于 第一薄膜，从而去除第一薄膜的针孔。 用于制造致密薄膜的方法可以包括在多孔表面上形成第一薄膜（1'）（2'），（2'）在第一薄膜的表面上形成第二薄膜，其由异质材料制成， 相对于第一薄膜，从而去除第一薄膜的针孔，和（3'）蚀刻第二薄膜的表面。 致密的薄膜包括多孔材料，形成在多孔材料的表面上并具有针孔的第一薄膜，相对于第一薄膜包括均质或异质材料的阻挡材料，并且被构造成阻挡针孔，以及 第二薄膜包括相对于第一薄膜均匀或不均匀的材料并形成在第一薄膜的表面上。

公开(公告)号：US08030699B2

公开(公告)日：2011-10-04

申请号：US11918967

申请日：2006-04-21

Applicant: Jong-ho Lee

Inventor： Jong-ho Lee

IPC: H11L29/788

CPC classification number: H01L21/28273 ,  B82Y10/00 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42332 ,  H01L29/7881

Abstract: Disclosed herein is a flash memory device in which the distribution of threshold voltage is significantly reduced and the durability is improved even though a floating gate has a micro- or nano-size length. It comprises a tunneling insulation film formed on a semiconductor substrate; a multilayer floating gate structure comprising a first thin storage electrode, a second thick storage electrode, and a third thin storage electrode, defined in that order on the tunneling insulation film; an interelectrode insulation film and a control electrode formed in that order on the floating gate structure; and a source/drain provided in the semiconductor substrate below the opposite sidewalls of the floating gate structure. The novel flash memory device can be readily fabricated at a high yield through a process compatible with a conventional one.

Abstract translation: 这里公开了一种闪存器件，其中阈值电压的分布被显着地减小，并且即使浮栅具有微尺寸或纳米尺寸长度也提高了耐久性。 它包括形成在半导体衬底上的隧道绝缘膜; 多层浮栅结构，包括在隧道绝缘膜上依次定义的第一薄存储电极，第二厚存储电极和第三薄层存储电极; 电极间绝缘膜和在浮栅结构上依次形成的控制电极; 以及在所述半导体衬底中设置在所述浮动栅极结构的相对侧壁下方的源极/漏极。 新颖的闪速存储器件可以通过与常规闪存器件兼容的工艺以高产率容易地制造。