Non-provisional utility method and apparatus for receiving, storing, and executing data broadcast application
    5.
    发明申请
    Non-provisional utility method and apparatus for receiving, storing, and executing data broadcast application 审中-公开
    用于接收,存储和执行数据广播应用的非临时效用方法和装置

    公开(公告)号:US20080092196A1

    公开(公告)日:2008-04-17

    申请号:US11699457

    申请日:2007-01-30

    IPC分类号: H04N7/16 H04N7/173

    摘要: Provided are a method and apparatus for receiving, storing, and executing a data broadcast application. The apparatus includes an application controller that determines whether receiving of application data needed to execute an application is completed before storing of a data broadcast is completed, allows the received application data to be stored when receiving of the application is completed, and determines whether the application will be executed together with audio/video data when the stored data broadcast is reproduced; and a storage unit that stores the completely received application data together with the audio/video data. Accordingly, it is possible to prevent the occurrence of errors in executing an application.

    摘要翻译: 提供了一种用于接收,存储和执行数据广播应用的方法和装置。 该装置包括:应用控制器,在完成数据广播的存储之前,确定是否完成了执行应用所需的应用数据的接收,允许在接收到应用完成时存储接收的应用数据,并且确定应用 将在再现存储的数据广播时与音频/视频数据一起执行; 以及存储单元,其将完整接收的应用数据与音频/视频数据一起存储。 因此,可以防止在执行应用时发生错误。

    Method of fabricating gate of semiconductor device using oxygen-free ashing process
    6.
    发明申请
    Method of fabricating gate of semiconductor device using oxygen-free ashing process 审中-公开
    使用无氧灰化工艺制造半导体器件栅极的方法

    公开(公告)号:US20070178637A1

    公开(公告)日:2007-08-02

    申请号:US11699784

    申请日:2007-01-30

    IPC分类号: H01L21/8238

    摘要: A method of fabricating a gate of a semiconductor device using an oxygen-free ashing process is disclosed. The method includes forming a high-k dielectric film, having a dielectric constant higher than a silicon oxide film, on a semiconductor substrate including an NMOS region and a PMOS region, forming an etching target film on the high-k dielectric film, forming a photoresist pattern to expose any one region of the two regions, on the etching target film, etching the etching target film using the photoresist pattern as an etching mask, and removing the photoresist pattern using plasma formed in the presence of an oxygen-free reactive gas.

    摘要翻译: 公开了一种使用无氧灰化工艺制造半导体器件的栅极的方法。 该方法包括在包括NMOS区域和PMOS区域的半导体衬底上形成具有高于氧化硅膜的介电常数的高k电介质膜,在高k电介质膜上形成蚀刻靶膜,形成 光致抗蚀剂图案以暴露两个区域的任何一个区域,在蚀刻目标膜上,使用光刻胶图案蚀刻蚀刻目标膜作为蚀刻掩模,以及使用在无氧反应气体存在下形成的等离子体去除光致抗蚀剂图案 。

    Molded underfill flip chip package preventing warpage and void
    9.
    发明授权
    Molded underfill flip chip package preventing warpage and void 有权
    成型底部填充倒装芯片封装,防止翘曲和空隙

    公开(公告)号:US08592997B2

    公开(公告)日:2013-11-26

    申请号:US12916677

    申请日:2010-11-01

    IPC分类号: H01L23/28

    摘要: A molded underfill flip chip package may include a printed circuit board, a semiconductor chip mounted on the printed circuit board, and a sealant. The printed circuit board has at least one resin passage hole passing through the printed circuit board and at least one resin channel on a bottom surface of the printed circuit board, the at least one resin channel extending from the at least one resin passage hole passing through the printed circuit board. The sealant seals a top surface of the printed circuit board, the semiconductor chip, the at least one resin passage hole, and the at least one resin channel.

    摘要翻译: 模制底部填充倒装芯片封装可以包括印刷电路板,安装在印刷电路板上的半导体芯片和密封剂。 印刷电路板具有穿过印刷电路板的至少一个树脂通孔和印刷电路板的底表面上的至少一个树脂通道,所述至少一个树脂通道从至少一个树脂通道孔延伸通过 印刷电路板。 密封剂密封印刷电路板,半导体芯片,至少一个树脂通孔和至少一个树脂通道的顶表面。

    Flash memory device
    10.
    发明授权
    Flash memory device 有权
    闪存设备

    公开(公告)号:US08030699B2

    公开(公告)日:2011-10-04

    申请号:US11918967

    申请日:2006-04-21

    申请人: Jong-ho Lee

    发明人: Jong-ho Lee

    IPC分类号: H11L29/788

    摘要: Disclosed herein is a flash memory device in which the distribution of threshold voltage is significantly reduced and the durability is improved even though a floating gate has a micro- or nano-size length. It comprises a tunneling insulation film formed on a semiconductor substrate; a multilayer floating gate structure comprising a first thin storage electrode, a second thick storage electrode, and a third thin storage electrode, defined in that order on the tunneling insulation film; an interelectrode insulation film and a control electrode formed in that order on the floating gate structure; and a source/drain provided in the semiconductor substrate below the opposite sidewalls of the floating gate structure. The novel flash memory device can be readily fabricated at a high yield through a process compatible with a conventional one.

    摘要翻译: 这里公开了一种闪存器件,其中阈值电压的分布被显着地减小,并且即使浮栅具有微尺寸或纳米尺寸长度也提高了耐久性。 它包括形成在半导体衬底上的隧道绝缘膜; 多层浮栅结构,包括在隧道绝缘膜上依次定义的第一薄存储电极,第二厚存储电极和第三薄层存储电极; 电极间绝缘膜和在浮栅结构上依次形成的控制电极; 以及在所述半导体衬底中设置在所述浮动栅极结构的相对侧壁下方的源极/漏极。 新颖的闪速存储器件可以通过与常规闪存器件兼容的工艺以高产率容易地制造。