公开(公告)号：US20080094761A1

公开(公告)日：2008-04-24

申请号：US11588013

申请日：2006-10-24

Applicant: James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

Inventor： James Mac Freitag ,  Kuok San Ho ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

IPC: G11B5/127 ,  G11B5/33

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996

Abstract: A magnetoresistive sensor having a shape enhanced pinning and a flux guide structure. The sensor includes a sensor stack with a pinned layer, spacer layer and pinned layer. First and second hard bias layers and lead layers extend from the sides of the sensor stack. The hard bias layers and leads have a stripe height that is smaller than the stripe height of the free layer, resulting in a free layer that extends beyond the back edge of the lead and hard bias layer. This portion of the free layer that extends beyond the back edge of the leads and hard bias layers provides a back flux guide. Similarly, the sensor may have a free layer that extends beyond the front edge of the lead and hard bias layers to provide a front flux guide. The pinned layer extends significantly beyond the back edge of the free layer, providing the pinned layer with a strong shape enhanced magnetic anisotropy. The sensor may have a lead over layer structure, with the sensor layers extending significantly beyond the inner ends of the leads, thereby moving the outer edges of the sensor layers outside of the track width of the sensor. This eliminates the effect of magnetic damage at the outer edges of the free layer.

Abstract translation: 具有形状增强的钉扎和磁通引导结构的磁阻传感器。 传感器包括具有被钉扎层，间隔层和钉扎层的传感器堆叠。 第一和第二硬偏压层和引线层从传感器堆叠的侧面延伸。 硬偏置层和引线具有小于自由层的条纹高度的条纹高度，导致延伸超过引线和硬偏置层的后边缘的自由层。 自由层的延伸超过引线和硬偏置层的后边缘的部分提供了反向通量引导件。 类似地，传感器可以具有延伸超过引线和硬偏置层的前边缘的自由层，以提供前通量引导件。 被钉扎层明显地延伸超过自由层的后边缘，为钉扎层提供强的形状增强的磁各向异性。 传感器可以具有超导层结构，其中传感器层明显地超过引线的内端，从而将传感器层的外边缘移动到传感器的轨道宽度之外。 这消除了在自由层的外边缘处的磁损伤的影响。

公开(公告)号：US07317596B2

公开(公告)日：2008-01-08

申请号：US11158444

申请日：2005-06-21

Applicant: Thomas R. Albrecht ,  Robert E. Fontana, Jr. ,  Ching Hwa Tsang ,  Mason L. Williams ,  Bruce Alexander Wilson

Inventor： Thomas R. Albrecht ,  Robert E. Fontana, Jr. ,  Ching Hwa Tsang ,  Mason L. Williams ,  Bruce Alexander Wilson

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/743 ,  G11B5/855 ,  G11B2005/3996

Abstract: A continuous-media or patterned-media disk drive with a low ratio of linear bit density in bits per inch (BPI) in the along-the-track direction to track density in tracks per inch (TPI) in the cross-track direction has a magnetoresistive read head with high cross-track spatial resolution. The read head is located between two magnetic shields, with the shields and read head formed on a side surface of the head carrier perpendicular to the carrier's disk-facing surface. The carrier is supported by the disk drive actuator with the side surface of the carrier oriented generally parallel to the data tracks. In this arrangement the high-spatial-resolution direction of the read head (the transverse direction perpendicular to the side surface on which the head is formed) is in the radial or cross-track direction.

Abstract translation: 在轨道方向上沿线方向的线性位密度（以比特/英寸（BPI））为单位的跟踪密度（以每英里轨道（TPI）为单位）的连续介质或图形媒体盘驱动器， 具有高交叉轨道空间分辨率的磁阻读头。 读取头位于两个磁屏蔽之间，其中屏蔽和读取头形成在头托架的垂直于托架面向盘的表面的侧表面上。 载体由磁盘驱动器致动器支撑，其中载体的侧表面大致平行于数据轨道。 在这种布置中，读取头的高空间分辨率方向（垂直于形成头部的侧面的横向方向）处于径向或横向方向。

公开(公告)号：US06975485B2

公开(公告)日：2005-12-13

申请号：US10890658

申请日：2004-07-13

Applicant: Yimin Hsu ,  Ching Hwa Tsang

Inventor： Yimin Hsu ,  Ching Hwa Tsang

IPC: G11B5/00 ,  G11B5/09 ,  G11B5/187 ,  G11B5/23 ,  G11B5/31 ,  G11B5/39 ,  G11B5/48 ,  G11B5/127

CPC classification number: G11B5/3116 ,  G11B5/09 ,  G11B5/187 ,  G11B5/23 ,  G11B5/313 ,  G11B5/3143 ,  G11B5/3146 ,  G11B5/3967 ,  G11B5/488 ,  G11B2005/001 ,  G11B2005/0013 ,  G11B2005/0026

Abstract: A thin film inductive write head for magnetic recording has a write gap formed as a lamination of alternating layers of a nonmagnetic gap layer and a ferromagnetic spacer layer. There are N gap layers and N−1 spacer layers, with each pole tip of the write head being located adjacent to a gap layer. The spacer layers in the gap structure are formed of a ferromagnetic material with a high saturation moment density (BS) that is close to the BS of the spacer material from which the pole tips are formed. Unlike the pole tips, the spacer layers are not part of a magnetic circuit and are magnetically isolated, i.e., completely surrounded by nonmagnetic gap material. The effect of the spacer layers is to effectively divide the gap into a plurality of smaller gaps. The write head with the laminated gap creates a write bubble that is narrower in the off-track direction and wider in the in-track direction.

Abstract translation: 用于磁记录的薄膜感应写头具有形成为非磁性间隙层和铁磁间隔层的交替层的叠层的写间隙。 存在N个间隙层和N-1间隔层，写头的每个极尖位于邻近间隙层的位置。 间隙结构中的间隔层由具有高的饱和力矩密度（B SUB S S）的铁磁材料形成，该高铁磁性材料接近间隔材料的B S S， 形成极尖。 与极尖不同，间隔层不是磁路的一部分，并且是磁隔离的，即被非磁性间隙材料完全包围。 间隔层的作用是将间隙有效地分成多个较小间隙。 具有层压间隙的写头产生在偏离磁道方向上较窄的写入气泡，并且在轨道内方向上较宽。

公开(公告)号：US6156375A

公开(公告)日：2000-12-05

申请号：US245232

申请日：1999-02-05

Applicant: Hung-Liang Hu ,  Rodney Edgar Lee ,  Hugo Alberto Emilio Santini ,  Ching Hwa Tsang

Inventor： Hung-Liang Hu ,  Rodney Edgar Lee ,  Hugo Alberto Emilio Santini ,  Ching Hwa Tsang

IPC: G11B5/265 ,  G11B5/31 ,  G11B5/39 ,  B05D5/12

CPC classification number: G11B5/3967 ,  G11B5/3103 ,  G11B5/313 ,  G11B5/3163

Abstract: A combined sunken magnetoresistive (MR) read/write head is provided wherein first and second shield layers are eliminated or thinned down in an insulation stack region just behind a pole tip region. This provides a depression behind the pole tip region where head components, such as the write coil, insulation stack and pole pieces of a write head, are located. Leads for an MR sensor of the head extend parallel to an air bearing surface (ABS) where they connect to first and second conductors beyond the limits of the shield layers. The conductors extend back into the head normal to the air bearing surface without any danger of shorting to the shield layers.

Abstract translation: 提供了组合的凹陷磁阻（MR）读/写头，其中第一和第二屏蔽层在刚好在极尖区域之后的绝缘堆叠区域中消除或减薄。 这提供了磁头尖端区域后面的凹陷，其中诸如写入线圈，绝缘堆叠和写入磁头的磁极部件的磁头部件位于其中。 头部的MR传感器的引线平行于空气轴承表面（ABS）延伸，其中它们连接到超过屏蔽层限制的第一和第二导体。 导体延伸回到垂直于空气轴承表面的头部中，而不会有任何与屏蔽层短路的危险。

公开(公告)号：US6114719A

公开(公告)日：2000-09-05

申请号：US87553

申请日：1998-05-29

Applicant: Frederick Hayes Dill ,  Robert Edward Fontana, Jr. ,  Tsann Linn ,  Stuart Stephen Papworth Parkin ,  Ching Hwa Tsang

Inventor： Frederick Hayes Dill ,  Robert Edward Fontana, Jr. ,  Tsann Linn ,  Stuart Stephen Papworth Parkin ,  Ching Hwa Tsang

IPC: G11C11/15 ,  H01L29/76

CPC classification number: H01L43/08 ,  G11C11/16 ,  H01L27/224

Abstract: A magnetic tunnel junction (MTJ) memory cell uses a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the free ferromagnetic layer in the MTJ stack to provide transverse and/or longitudinal bias fields to the free ferromagnetic layer. The MTJ is formed on an electrical lead on a substrate and is made up of a stack of layers. The layers in the MTJ stack are an antiferromagnetic layer, a fixed ferromagnetic layer exchange biased with the antiferromagnetic layer so that its magnetic moment cannot rotate in the presence of an applied magnetic field, an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer, a free ferromagnetic layer in contact with the tunnel barrier layer and whose magnetic moment is free to rotate in the presence of an applied magnetic field, and whose moment, in the absence of any applied field, is generally either parallel or antiparallel to that of the fixed ferromagnetic layer, a biasing ferromagnetic layer that has its magnetic moment aligned generally in the plane of the MTJ, and a nonferromagnetic electrically conductive spacer layer separating the biasing ferromagnetic layer from the other layers in the stack. The self field or demagnetizing field from the biasing layer magnetostatically couples with the edges of the free layer so as to provide a transverse bias field, which results in a coherent rotation of the moment of the free layer, and/or a longitudinal bias field, which assures that the two states of the memory cell are equally stable with respect to magnetic field excursions.

Abstract translation: 磁性隧道结（MTJ）存储单元使用与MTJ堆叠中的自由铁磁层磁静电耦合的MTJ堆叠层中的偏置铁磁层，以向自由铁磁层提供横向和/或纵向偏置场。 MTJ形成在基板上的电引线上，并且由一叠层组成。 MTJ堆叠中的层是反铁磁层，固定的铁磁层与反铁磁层交替偏置，使得其在施加的磁场存在的情况下不能旋转，与固定铁磁层接触的绝缘隧道势垒层， 与隧道势垒层接触的自由铁磁层，其磁矩在施加的磁场的存在下自由旋转，并且其在没有任何施加磁场的情况下的时刻通常是平行或反平行的 固定铁磁层，其磁矩大致在MTJ的平面内的偏置铁磁层，以及将偏置铁磁层与堆叠中的其它层分离的非铁磁导电间隔层。 来自偏置层的自场或去磁场与自由层的边缘静磁耦合，以便提供横向偏置场，这导致自由层的力矩和/或纵向偏置场的相干旋转， 这确保了存储器单元的两个状态相对于磁场偏移同样稳定。

公开(公告)号：US5668523A

公开(公告)日：1997-09-16

申请号：US449605

申请日：1995-05-23

Applicant: Mao-Min Chen ,  Kenneth Ting-Yuan Kung ,  Ching Hwa Tsang

Inventor： Mao-Min Chen ,  Kenneth Ting-Yuan Kung ,  Ching Hwa Tsang

IPC: G11B5/39 ,  H01F10/32

CPC classification number: B82Y25/00 ,  G11B5/3903 ,  G11B5/399 ,  H01F10/3218

Abstract: An exchange-biased magnetoresistive (MR) read transducer in which the MR layer composition is changed at the interface with an antiferromagnetic layer, which is in direct contact with the ferromagnetic MR layer. The exchange-bias field strength H.sub.UA in the MR layer is increased at room temperature by adding a specially-optimized transition region in the ferromagnetic MR layer at the interface. The percentage of iron in the ferromagnetic alloy varies from a higher value at the interface to a lower value at the opposite end of the transition region. The higher iron ratio at the antiferromagnetic interface enhances the exchange-bias field H.sub.UA and the lower iron ratio throughout the bulk of the ferromagnetic MR layer maintains the lower coercivity preferred in the layer, thereby enhancing the longitudinal bias field with respect to the MR coercivity. Advantageously, the enhanced longitudinal bias effect of the special ferromagnetic transition region does not reduce the critical temperature T.sub.cr at which the temperature-dependent exchange-bias field H.sub.UA (T) approaches zero.

Abstract translation: 交换偏置磁阻（MR）读取传感器，其中MR层组成在与铁磁MR层直接接触的反铁磁层的界面处改变。 MR层中的交换偏置场强HUA在室温下通过在界面处的铁磁性MR层中加入特别优化的过渡区而增加。 铁磁合金中铁的百分比从界面处的较高值到过渡区域相对端的较低值变化。 反铁磁性界面处铁含量越高，交换偏置场HUA越大，铁磁MR层整体的铁含量越低，维持层中优选的矫顽力越低，从而增强纵向偏磁场相对于MR矫顽力。 有利的是，特殊铁磁过渡区的增强的纵向偏置效应不会降低温度相关的交换偏置场HUA（T）接近零的临界温度Tcr。

公开(公告)号：US5664316A

公开(公告)日：1997-09-09

申请号：US438430

申请日：1995-05-10

Applicant: Mao-Min Chen ,  Robert Edward Fontana ,  Mohamad Towfik Krounbi ,  Kenneth Ting-Yuan Kung ,  James Hsi-Tang Lee ,  Jyh-Shiliey Jerry Lo ,  Ching Hwa Tsang ,  Po-Kang Wang

Inventor： Mao-Min Chen ,  Robert Edward Fontana ,  Mohamad Towfik Krounbi ,  Kenneth Ting-Yuan Kung ,  James Hsi-Tang Lee ,  Jyh-Shiliey Jerry Lo ,  Ching Hwa Tsang ,  Po-Kang Wang

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC classification number: G11B5/3932 ,  G11B5/399 ,  G11B5/3163 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A magnetoresistive (MR) read transducer having passive end regions separated by a central active region in which an MR layer is formed over substantially only the central active region and in which a magnetic bias layers is formed in each passive end region. Each of the magnetic bias layers includes a layer of ferromagnetic material and a layer of antiferromagnetic material overlaying and in contact with the ferromagnetic layer to provide an exchange-coupled magnetic bias field. Each of the magnetic bias layers form an abutting junction having magnetic and electrically continuity with the MR layer to produce a longitudinal magnetic bias field in the transducer.

Abstract translation: 磁阻（MR）读取传感器，其具有被中心有源区隔开的被动端区，其中MR层基本上仅形成在中心有源区上，并且在每个被动端区中形成磁偏置层。 每个磁偏置层包括铁磁材料层和叠层并与铁磁层接触的反铁磁材料层，以提供交换耦合磁偏置场。 每个磁偏置层形成与MR层具有磁性和电连续性的邻接结，以在换能器中产生纵向磁偏置场。

公开(公告)号：US07652855B2

公开(公告)日：2010-01-26

申请号：US11595186

申请日：2006-11-09

Applicant: James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

Inventor： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

IPC: G11B5/39

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

Abstract: A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.

Abstract translation: 用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。 在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。 覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。 在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。 还描述了具有自对准引线的各种实施例。 在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

公开(公告)号：US07497008B2

公开(公告)日：2009-03-03

申请号：US11211877

申请日：2005-08-24

Applicant: Tsung Yuan Chen ,  Frederick Hayes Dill ,  James Mac Freitag ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang ,  Patrick Rush Webb

Inventor： Tsung Yuan Chen ,  Frederick Hayes Dill ,  James Mac Freitag ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang ,  Patrick Rush Webb

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/3932 ,  G11B5/3929 ,  G11B5/398 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.

Abstract translation: 本发明的一个实施例是具有覆盖的引线焊盘的磁头，该焊盘在硬质合金结构之间接触传感器的顶表面，并且不接触与传感器直接接触的电绝缘的硬质合金结构。 传感器顶部的引线焊盘接触区域由导电材料的侧壁沉积限定，以在形成其余引线之前在光致抗蚀剂上形成引线焊盘。 用于引线焊盘的导电材料以浅角度沉积，以使光致抗蚀剂上的侧壁沉积最大化，然后以高角度离子研磨，以从外界移除导电材料同时留下侧壁材料。 绝缘层以高角度沉积在引线材料上，然后以浅角度铣削以除去与侧壁的绝缘。

公开(公告)号：US20080205116A1

公开(公告)日：2008-08-28

申请号：US12116111

申请日：2008-05-06

Applicant: Robert E. Fontana ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

Inventor： Robert E. Fontana ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

IPC: G11C11/15 ,  H01L21/00

CPC classification number: G11C11/14 ,  G11C5/02 ,  G11C19/0808

Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

Abstract translation: 公开了磁存储器和方法。 如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。 位可以以磁畴的形式写入数据存储层。 然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。 通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。