Carrier structure for semiconductor chip and method for manufacturing the same
    33.
    发明授权
    Carrier structure for semiconductor chip and method for manufacturing the same 有权
    半导体芯片的载体结构及其制造方法

    公开(公告)号:US07619317B2

    公开(公告)日:2009-11-17

    申请号:US11984349

    申请日:2007-11-16

    Abstract: A carrier structure for a semiconductor chip and a method for manufacturing the same are disclosed. The method includes the following steps: providing a carrier board having at least one through cavity, wherein a removable film is formed on the surface of the carrier board, and a semiconductor chip is temporarily fixed in the through cavity by the removable film; filling the gap between the through cavity of the carrier board and the semiconductor chip with an adhesive material in order to fix the semiconductor chip; and removing the removable film. The disclosed method can reduce the alignment error resulted from the tiny shift of the semiconductor chip caused by jitters before the semiconductor is fixed in the cavity, thereby to increase the accuracy of the alignment, to facilitate fine wiring, and to meet the trend toward compact size of semiconductor packages.

    Abstract translation: 公开了一种用于半导体芯片的载体结构及其制造方法。 该方法包括以下步骤:提供具有至少一个通孔的载体板,其中在载体板的表面上形成可移除膜,并且半导体芯片通过可移除膜临时固定在通孔中; 用粘合剂材料填充载体板的通孔和半导体芯片之间的间隙以固定半导体芯片; 并移除可拆卸胶片。 所公开的方法可以减少半导体在腔内固定之前由抖动引起的微小偏移导致的对准误差,从而提高对准的精度,以便于精细布线,并且满足紧凑的趋势 半导体封装尺寸。

    Semiconductor packaging substrate structure with capacitor embedded therein
    35.
    发明申请
    Semiconductor packaging substrate structure with capacitor embedded therein 审中-公开
    具有电容器的半导体封装衬底结构嵌入其中

    公开(公告)号:US20080217739A1

    公开(公告)日:2008-09-11

    申请号:US12153388

    申请日:2008-05-19

    Abstract: The present invention relates to a semiconductor packaging substrate structure with a capacitor embedded therein, which includes an inner circuit board, a patterned buffer layer, a high dielectric material layer, and a patterned metal layer. The buffer layer is disposed on at least one surface of the inner circuit board to expose the inner electrode layer of the internal board. The high dielectric material layer is located on the buffer layer and the inner electrode layer. The metal layer is placed on the high dielectric material layer including an outer circuit layer capable of electrical connection to the inner circuit layer, and an outer electrode layer corresponding to the inner electrode layer to form a capacitor. Owing to the assistance of the buffer layer, the structure can enhance the transmission and the quality of the products.

    Abstract translation: 本发明涉及一种具有嵌入其中的电容器的半导体封装衬底结构,其包括内部电路板,图案化缓冲层,高介电材料层和图案化金属层。 缓冲层设置在内部电路板的至少一个表面上,以暴露内部电路板的内部电极层。 高介电材料层位于缓冲层和内电极层上。 金属层被放置在包括能够与内部电路层电连接的外部电路层的高电介质材料层和与内部电极层相对应的外部电极层以形成电容器。 由于缓冲层的帮助,该结构可以增强产品的传输和质量。

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