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44 条记录 (耗时 0.023 秒)

    Color control by alteration of wavelength converting element
    34.
    发明授权
    Color control by alteration of wavelength converting element 有权
    通过改变波长转换元件的颜色控制

    公开(公告)号：US07902566B2

    公开(公告)日：2011-03-08

    申请号：US12277230

    申请日：2008-11-24

    申请人： Steven Paolini ,  Michael D. Camras ,  Oscar A. Chao Pujol ,  Frank M. Steranka ,  John E. Epler

    发明人： Steven Paolini ,  Michael D. Camras ,  Oscar A. Chao Pujol ,  Frank M. Steranka ,  John E. Epler

    IPC分类号： H01L33/00

    CPC分类号： H01L33/508 ,  H01L33/22 ,  H01L33/58 ,  H01L2224/73253 ,  H01L2933/0041

    摘要： A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

    摘要翻译： 通过在发光器件上沉积波长转换材料层来制造发光器件，测试该器件以确定产生的波长光谱并校正波长转换部件以产生所需的波长光谱。 可以通过减少或增加波长转换材料的量来校正波长转换构件。 在一个实施例中，波长转换构件中的波长转换材料的量例如通过激光烧蚀或蚀刻而减小，以产生所需的波长谱。

    Light emitting diode for mounting to a heat sink
    36.
    发明授权
    Light emitting diode for mounting to a heat sink 有权
    用于安装在散热片上的发光二极管

    公开(公告)号：US07625104B2

    公开(公告)日：2009-12-01

    申请号：US11956270

    申请日：2007-12-13

    申请人： Li Zhang ,  Frank M. Steranka ,  Frank J. Wall, Jr. ,  Jeff Kmetec ,  Johannes Wilhelmus Weekamp

    发明人： Li Zhang ,  Frank M. Steranka ,  Frank J. Wall, Jr. ,  Jeff Kmetec ,  Johannes Wilhelmus Weekamp

    IPC分类号： F21V29/00

    CPC分类号： F21V29/74 ,  F21K9/00 ,  F21K9/20 ,  F21V3/02 ,  F21V17/164 ,  F21V19/001 ,  F21V29/70 ,  F21Y2115/10 ,  Y10T29/49826

    摘要： A light emitting diode (LED) apparatus for mounting to a heat sink having a front surface with an opening therein is disclosed. The apparatus includes a sub-mount, at least one LED die mounted on the sub-mount, and a thermally conductive slug having first and second areas. The first area is thermally coupled to the sub-mount and the second area has a post protruding outwardly therefrom. The post is operably configured to be received in the opening in the heat sink and to secure the LED apparatus to the heat sink such that the second area is thermally coupled to the front surface of the heat sink. Other embodiments for mounting an LED apparatus utilizing adhesive thermally conductive material, spring clips, insertion snaps, or welding are also disclosed.

    摘要翻译： 公开了一种用于安装到具有其中具有开口的前表面的散热器的发光二极管（LED）装置。 该装置包括子安装件，安装在副安装座上的至少一个LED管芯，以及具有第一和第二区域的导热段。 第一区域热耦合到子座，并且第二区域具有从其向外突出的柱。 柱被可操作地构造成被容纳在散热器的开口中并且将LED装置固定到散热器，使得第二区域热耦合到散热器的前表面。 还公开了用于安装利用粘合导热材料，弹簧夹，插入卡扣或焊接的LED装置的其它实施例。

    AlInGaP LED HAVING REDUCED TEMPERATURE DEPENDENCE
    37.
    发明申请
    AlInGaP LED HAVING REDUCED TEMPERATURE DEPENDENCE 有权
    AlInGaP LED具有降低的温度依赖性

    公开(公告)号：US20090230381A1

    公开(公告)日：2009-09-17

    申请号：US12433106

    申请日：2009-04-30

    申请人： Michael R. KRAMES ,  Nathan F. Gardner ,  Frank M. Steranka

    发明人： Michael R. KRAMES ,  Nathan F. Gardner ,  Frank M. Steranka

    IPC分类号： H01L33/00

    CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

    摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

    摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

    A1InGaP LED having reduced temperature dependence
    39.
    发明授权
    A1InGaP LED having reduced temperature dependence 有权
    AlInGaP LED具有降低的温度依赖性

    公开(公告)号：US07244630B2

    公开(公告)日：2007-07-17

    申请号：US11100080

    申请日：2005-04-05

    申请人： Michael R. Krames ,  Nathan F. Gardner ,  Frank M. Steranka

    发明人： Michael R. Krames ,  Nathan F. Gardner ,  Frank M. Steranka

    IPC分类号： H01L21/00

    CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

    摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

    摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。