Electro-optical device with inverted transparent substrate and method
for making same
    5.
    发明授权
    Electro-optical device with inverted transparent substrate and method for making same 失效
    带反转透明基板的电光装置及其制造方法

    公开(公告)号:US5115286A

    公开(公告)日:1992-05-19

    申请号:US663056

    申请日:1991-02-27

    IPC分类号: H01L33/00

    CPC分类号: H01L33/0025 H01L33/0062

    摘要: An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer. The technique may also be used for growing a transparent substrate which is lattice mismatched with the active deivce layers.

    摘要翻译: 通过外延地生长有源器件层,然后在不透明晶片上生长透明衬底层,制造具有透明衬底的电光器件。 随后去除不透明晶片。 有源器件层具有足够低的扩散性的掺杂剂,使得它们的电子特性在透明衬底层的生长过程中长时间暴露于高温下不会受到不利影响。 在液相外延(LPE)方法中,使用重复的温度循环技术,其中每次冷却后温度重复升高,以提供用于生长足够厚的基底层或一系列器件层的大的冷却范围。 在生长和温度升温期之间,装置储存在LPE反应器内。 当外延层可氧化时,在生长之间和在升温期间暂时在其上生长不可氧化的盖。 随后在下一层生长之前在升高的温度下将盖除去。 该技术还可用于生长与活性活性层晶格失配的透明衬底。

    COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LIGHT EMITTING DEVICES
    6.
    发明申请
    COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LIGHT EMITTING DEVICES 有权
    磷光转换发光装置阵列的通用光学元件

    公开(公告)号:US20120043564A1

    公开(公告)日:2012-02-23

    申请号:US13288291

    申请日:2011-11-03

    IPC分类号: H01L33/08

    摘要: A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

    摘要翻译: 设备具有至少一个发光器件(LED)裸片,该发光器件(LED)裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座,接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。 在一个实现中,单个光学元件被结合到安装到基座上的多个LED芯片,并且基座和光学元件具有大致相同的热膨胀系数。 或者,可以使用多个光学元件。 光学元件或LED管芯可以用波长转换材料的涂层覆盖。 在一个实施方案中,测试该器件以确定产生的波长,并且添加波长转换材料的附加层,直到产生所需的波长。

    Electro-optical device with inverted transparent substrate and method
for making same
    10.
    发明授权
    Electro-optical device with inverted transparent substrate and method for making same 失效
    带反转透明基板的电光装置及其制造方法

    公开(公告)号:US4912532A

    公开(公告)日:1990-03-27

    申请号:US237797

    申请日:1988-08-26

    IPC分类号: H01L21/208 H01L33/00

    CPC分类号: H01L33/0025 H01L33/0062

    摘要: An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The device layers have dopants with sufficient low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised up each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. In other embodimens, the device is either temporarily removed from the LPE reactor or is transferred to another reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat-up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer.