Method of manufacturing semiconductor wafers
    33.
    发明授权
    Method of manufacturing semiconductor wafers 有权
    制造半导体晶圆的方法

    公开(公告)号:US09123795B2

    公开(公告)日:2015-09-01

    申请号:US14087883

    申请日:2013-11-22

    CPC classification number: H01L21/78 H01L21/02005 H01L21/02008

    Abstract: A method of manufacturing semiconductor wafers which facilitates formation of orientation flat lines and allows beveling work without problems. The method of manufacturing semiconductor wafers includes steps wherein a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer, by a laser beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter wafers to be obtained.

    Abstract translation: 一种制造半导体晶片的方法,其有利于形成取向扁平线,并且可以毫无问题地进行斜切加工。 制造半导体晶片的方法包括从大直径半导体晶片切出多个小直径晶片的步骤,该方法包括:标记步骤,通过激光束形成直槽状定向扁平线,以便 跨越大直径半导体晶片中的每行中的各个小直径晶片,其中小直径晶片的切割位置对于每个行共同沿特定方向排成一行; 以及切割步骤,在所述标记步骤之后,通过激光束与所述大直径半导体晶片分开地切割所述小直径晶片,使得所述取向扁平线位于所述小直径的所需位置 要获得的晶圆。

    METHOD FOR ADHERING WORKS AND WORK ADHERING APPARATUS
    34.
    发明申请
    METHOD FOR ADHERING WORKS AND WORK ADHERING APPARATUS 审中-公开
    用于加工工作和工作的方法

    公开(公告)号:US20130139949A1

    公开(公告)日:2013-06-06

    申请号:US13672969

    申请日:2012-11-09

    Abstract: The method for adhering works is capable of polishing the works so as to have the same thickness. The method for adhering works is performed in a work adhering apparatus comprising: a press table; and a plurality of pressing heads being provided above the press table and capable of independently moving close to and away from the press table. The press table and the pressing heads press and adhere the works onto a plate with an adhesive agent. Each of the pressing heads presses and adheres the one work onto the plate at a constant pressure.

    Abstract translation: 粘贴工件的方法能够对工件进行抛光以具有相同的厚度。 附着工件的方法在工件粘合装置中进行,包括:压床; 并且多个按压头设置在压台上方,能够独立地移动靠近和远离压床。 压床和压头按压并将工件粘贴到具有粘合剂的板上。 每个压头在一定压力下将一个工件压在板上。

    Abrasive machine
    35.
    发明申请
    Abrasive machine 有权
    磨料机

    公开(公告)号:US20020160702A1

    公开(公告)日:2002-10-31

    申请号:US10136578

    申请日:2002-04-25

    CPC classification number: B24B45/00 B24B7/228

    Abstract: The abrasive machine of the present invention is capable of controlling a shape of an abrasive face of a small abrasive plate. The abrasive machine comprises: a plate holder holding an abrasive plate; a fixed engaging member being fixed to the plate holder and engaging with the abrasive plate; a first O-ring being provided between the fixed engaging member and the abrasive plate; a second O-ring being provided between the plate holder and the abrasive plate; and a fluid supply-discharge mechanism for supplying a fluid to and discharging the same from a zone enclosed by the abrasive plate, the plate holder and the second O-ring. An outer circumferential face of the abrasive plate is separated from an inner circumferential face of the fixed engaging member.

    Abstract translation: 本发明的研磨机能够控制小型研磨板的研磨面的形状。 研磨机包括:保持研磨板的板夹; 固定的接合构件固定到所述板保持器并与所述研磨板接合; 第一O形环设置在固定接合构件和研磨板之间; 第二O形环设置在板支架和研磨板之间; 以及流体供给 - 排出机构,用于从由研磨板,板保持器和第二O形环包围的区域提供流体并将其排出。 研磨板的外周面与固定接合构件的内周面分离。

    Method of adhering wafer and wafer adhering device
    36.
    发明申请
    Method of adhering wafer and wafer adhering device 有权
    粘贴晶片和晶片粘附装置的方法

    公开(公告)号:US20020090589A1

    公开(公告)日:2002-07-11

    申请号:US10038262

    申请日:2002-01-03

    Inventor: Tetsuro Toya

    CPC classification number: C30B25/12 F27D2003/0002

    Abstract: The method of the present invention is capable of adhering a wafer to a prescribed position of the carrier plate, which has been correctly positioned, in a short time. The method comprises the steps of: heating a carrier plate; detecting a mark provided to a predetermined position of the carrier plate rotating at predetermined rotational speed; positioning the carrier plate on the basis of a position of the detected mark; conveying the carrier plate to a wafer adhering section with keeping a posture of the carrier plate which has been positioned in the positioning step; and adhering the wafer at a prescribed position of the carrier plate.

    Abstract translation: 本发明的方法能够在短时间内将晶片粘贴到正确定位的载板的规定位置。 该方法包括以下步骤:加热载板; 检测提供给以预定转速旋转的所述承载板的预定位置的标记; 基于检测到的标记的位置来定位承载板; 将承载板传送到晶片粘附部分,同时保持已经定位在定位步骤中的承载板的姿势; 并将晶片粘附在载体板的规定位置。

    POLISHING APPARATUS AND POLISHING METHOD

    公开(公告)号:US20240399529A1

    公开(公告)日:2024-12-05

    申请号:US18724971

    申请日:2023-04-03

    Inventor: Yuya KANNO

    Abstract: An object is to provide a polishing apparatus and a polishing method with which surface modification is implemented on a workpiece surface in consideration of the distribution of recesses and protrusions on the workpiece surface and with short-time processability improved. As a solution, a polishing apparatus (10) polishes a workpiece (W) under the following requirements. The polishing apparatus (10) includes a cavitation generating emission device (50). The cavitation generating emission device (50) has an inner tube (54) in which a first liquid flow (A) flows. The inner tube (54) includes a cavitation generating unit (54a). The cavitation generating emission device (50) is configured to generate cavitation in the first liquid flow (A) and make the first liquid flow (A) collide with the workpiece (W).

    WORK POLISHING APPARATUS AND WORK POLISHING METHOD

    公开(公告)号:US20240091898A1

    公开(公告)日:2024-03-21

    申请号:US18457421

    申请日:2023-08-29

    Inventor: Yosuke KANAI

    CPC classification number: B24B7/10 B24B51/00

    Abstract: In a work polishing apparatus, a polishing head including a head base portion, in an upper portion, to which a vertically movable and rotatable head shaft is fixed, and a holding member, in a lower portion, having a lower surface on which a work is held, is provided with, on the upper surface side of the holding member, a vertically movable partitioning portion and first and second fluid chambers respectively on the inner and outer circumference sides of the partitioning portion. Pressure in the first fluid chamber and in the second fluid chamber can be independently increased or decreased. The partitioning portion can be lowered at least to a position where the first fluid chamber and the second fluid chamber are partitioned such that a pressure difference can be produced between the interior of the first fluid chamber and the interior of the second fluid chamber.

    PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL

    公开(公告)号:US20220112622A1

    公开(公告)日:2022-04-14

    申请号:US17494132

    申请日:2021-10-05

    Abstract: There is provided a production apparatus of a gallium oxide crystal using a resistance heater, the heater provided therein being capable of being provided at a low cost and capable of suppressing deformation and breakage due to heat. The production apparatus for a gallium oxide crystal according to one or more aspects of the present invention includes a furnace body constituted by a heat resistant material, a crucible disposed in the furnace body, and a heater disposed around the crucible, the heater being a resistance heater including a heating part and a conductive part having a larger diameter than the heating part connected to each other, the heating part being constituted by a material having heat resistance to 1,850° C., the conductive part being constituted by a material having heat resistance to 1,800° C.

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