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公开(公告)号：US20060203396A1
公开(公告)日：2006-09-14
申请号：US11365559
申请日：2006-02-28
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , H01F10/16 , H01F10/3263
摘要： A magnetic detecting device and a method of manufacturing the magnetic detecting device are provided. Non-magnetic material layer-side magnetic layers of second fixed magnetic layers form a fixed magnetic layer. Each of the non-magnetic material layer-side magnetic layers and a free magnetic layer is formed of a layer, for example, a CoMnGeCu layer. In the CoMnGeCu layer, a bulk scattering coefficient may become larger, as compared with a CoMnGe layer. As a result, it is possible to increase the product between a magnetoresistance variation and a device area. Further, the ferromagnetic coupling magnetic field can be decreased. The Cu is added by a range which is larger than 0 at. % and not more than 17.5 at. % (average composition ratio).
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公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。
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33.发明授权Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers 有权隧道磁阻元件，其包括Mg-O阻挡层，其中非磁性金属子层设置在磁性层之一中公开(公告)号：US07969690B2
公开(公告)日：2011-06-28
申请号：US12042585
申请日：2008-03-05
申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , H01L43/08
摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.
摘要翻译： 在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。 非磁性金属子层的平均厚度为约1埃以上且约5以下。
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34.发明授权公开(公告)号：US07907370B2
公开(公告)日：2011-03-15
申请号：US11851570
申请日：2007-09-07
申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Masahiko Ishizone , Ryo Nakabayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Masahiko Ishizone , Ryo Nakabayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/16 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/08 , H01L43/12
摘要： A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.
摘要翻译： 公开了一种隧道式磁感应元件，其包括能够保持自由磁性层的有利的软磁性能并且与已知的隧道磁传感元件相比可以具有高电阻变化率（＆Dgr; R / R）的Mg-O绝缘屏障， 并且还公开了制造这种隧道磁传感元件的方法。 在Mg-O绝缘屏障上设置由Fe组成比X为约30〜100原子％的Co100-XFeX构成的增强层（第二磁性层）。 由此，可以减小自由磁层的磁致伸缩λ，并且可以增加电阻变化率（＆Dgr; R / R）。
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35.发明授权Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys 有权磁传感元件包括自由磁层或具有两个由不同CoMn基合金合金构成的子层的固定磁层公开(公告)号：US07724481B2
公开(公告)日：2010-05-25
申请号：US11504147
申请日：2006-08-15
CPC分类号： G01R33/093 , B82Y25/00 , Y10T428/1121 , Y10T428/115
摘要： A magnetic sensing element is provided. A free magnetic layer has a three-layer structure including CoMnα sublayers each composed of a metal compound represented by the formula: Co2xMnxαy. The α contains an element β and Sb, the element β being at least one element selected from Ge, Ga, In, Si, Pb, Zn, Sn, and Al. The concentration x and the concentration y are each represented in terms of atomic percent and satisfy the equation: 3x+y=100 atomic percent. One of the CoMnα sublayers is in contact with a lower nonmagnetic material layer. The other CoMnα sublayer is in contact with upper nonmagnetic material layer. As a result, it is possible to achieve a high ΔRA and a lower interlayer coupling magnetic field Hin compared with the known art.
摘要翻译： 提供了一种磁传感元件。 自由磁性层具有包含CoMnα亚层的三层结构，各层由以下通式表示的金属化合物构成：Co2xMnxαy。 α包含元素＆bgr; 和Sb，元素＆bgr; 是选自Ge，Ga，In，Si，Pb，Zn，Sn和Al中的至少一种元素。 浓度x和浓度y均以原子百分比表示，满足下式：3x + y = 100原子％。 CoMnα子层中的一个与较低的非磁性材料层接触。 另一个CoMnα子层与上部非磁性材料层接触。 结果，与已知技术相比，可以实现高的＆Dgr。RA和较低的层间耦合磁场Hin。
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36.发明授权Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer 失效具有包含非磁性金属层的自由层的隧道效应型磁传感器公开(公告)号：US07643254B2
公开(公告)日：2010-01-05
申请号：US11671819
申请日：2007-02-06
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3295
摘要： A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
摘要翻译： 隧道效应型磁传感器的自由磁性层形成在由Mg-O制成的绝缘阻挡层上，自由磁性层包括增强层，第一软磁层，非磁性金属层和 第二软磁层，从底部依次层叠。 例如，增强层由Co-Fe形成，第一和第二软磁性层由Ni-Fe形成，非磁性金属层由Ta形成。 第一软磁性层的平均厚度形成在5〜60的范围内。 因此，可以获得高电阻变化率（DeltaR / R）。
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37.发明申请公开(公告)号：US20090321246A1
公开(公告)日：2009-12-31
申请号：US12190864
申请日：2008-08-13
IPC分类号： C23C14/34
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/34 , C23C14/568 , C23C14/5853 , G11B5/3163 , G11B5/3906 , G11B5/3909 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A method and an apparatus of fabricating a tunnel magnetic resistive element which do not show much dispersion in RA and capable of obtaining a high MR ratio in a low RA are provided. The method of fabricating a tunnel magnetic resistive element includes a first ferromagnetic layer, a tunnel barrier layer made of metal oxide and a second ferromagnetic layer, wherein a step of making the tunnel barrier layer includes carrying out film formation of a first metal layer while doping oxygen on the first ferromagnetic layer, subsequently an oxidation process on the oxygen-doped first metal layer to make an oxide layer and film formation of a second metal layer on the oxide layer.
摘要翻译： 提供一种制造隧道磁阻元件的方法和装置，该隧道磁阻元件在RA中不显示很大的色散并且能够在低RA中获得高MR比。 制造隧道磁阻元件的方法包括第一铁磁层，由金属氧化物构成的隧道势垒层和第二铁磁层，其中制造隧道势垒层的步骤包括进行第一金属层的成膜，同时掺杂 氧，然后在氧掺杂的第一金属层上进行氧化处理以在氧化物层上形成氧化物层和第二金属层的膜形成。
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38.发明申请TUNNEL-EFFECT TYPE MAGNETIC SENSOR HAVING FREE LAYER INCLUDING NON-MAGNETIC METAL LAYER 失效具有无磁层的隧道效应型磁传感器，包括非磁性金属层公开(公告)号：US20080158739A1
公开(公告)日：2008-07-03
申请号：US11671819
申请日：2007-02-06
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3295
摘要： A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
摘要翻译： 隧道效应型磁传感器的自由磁性层形成在由Mg-O制成的绝缘阻挡层上，自由磁性层包括增强层，第一软磁层，非磁性金属层和 第二软磁层，从底部依次层叠。 例如，增强层由Co-Fe形成，第一和第二软磁性层由Ni-Fe形成，非磁性金属层由Ta形成。 第一软磁性层的平均厚度形成在5〜60的范围内。 因此，可以获得高电阻变化率（DeltaR / R）。
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39.发明申请TUNNELING MAGNETIC SENSOR INCLUDING TIO-BASED INSULATING BARRIER LAYER AND METHOD FOR PRODUCING THE SAME 审中-公开包括基于TIO的绝缘阻挡层的隧道式磁传感器及其制造方法公开(公告)号：US20080123223A1
公开(公告)日：2008-05-29
申请号：US11771876
申请日：2007-06-29
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Ryo Nakabayashi , Kazumasa Nishimura
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Ryo Nakabayashi , Kazumasa Nishimura
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11B5/398 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12 , Y10T29/49032
摘要： A tunneling magnetic sensor has a multilayer part including, from bottom to top, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is formed of titanium magnesium oxide (TiMgO) and contains magnesium in an amount of about 4 to 20 atomic percent based on 100 atomic percent of the total content of titanium and magnesium. The insulating barrier layer thus does not have a high concentration of magnesium. This tunneling magnetic sensor can provide a higher rate of resistance change (ΔR/R) at a lower RA (the product of sensor resistance, R, and sensor area, A) than known tunneling magnetic sensors.
摘要翻译： 隧道磁传感器具有从底部到顶部包括钉扎磁性层，绝缘阻挡层和自由磁性层的多层部件。 绝缘阻挡层由钛镁氧化物（TiMgO）形成，并且以钛和镁的总含量的100原子％计含有约4至20原子％的镁。 绝缘阻挡层因此不具有高浓度的镁。 该隧道磁传感器可以比已知的隧道磁传感器在较低的RA（传感器电阻，R和传感器面积A的乘积）下提供更高的电阻变化率（DeltaR / R）。
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40.发明申请TUNNEL MAGNETORESISTIVE SENSOR IN WHICH AT LEAST PART OF PINNED LAYER IS COMPOSED OF CoFeB LAYER AND METHOD FOR MANUFACTURING THE TUNNEL MAGNETORESISTIVE SENSOR 有权隧道磁体传感器，其中紧固层的至少一部分由CoFeB层组成，以及制造隧道磁传感器的方法公开(公告)号：US20080074805A1
公开(公告)日：2008-03-27
申请号：US11857921
申请日：2007-09-19
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要翻译： 隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。 构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。 第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。
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