VACUUM THIN FILM FORMING APPARATUS
    2.
    发明申请
    VACUUM THIN FILM FORMING APPARATUS 审中-公开
    真空薄膜成型装置

    公开(公告)号:US20100200394A1

    公开(公告)日:2010-08-12

    申请号:US12719920

    申请日:2010-03-09

    IPC分类号: C23C14/34

    摘要: In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected to the electrode for adjusting the potential of the substrate on the substrate holder.

    摘要翻译: 为了始终将基板上的自偏压自动调整为恒定值,并且形成具有优异的工艺再现性的高品质绝缘膜,根据本发明的真空薄膜形成装置包括:高频 具有室的溅射装置,用于抽空室内的抽气装置,用于向室内供给气体的气体引入装置,设置在室内的基板保持架以及设置在基板保持架内的电极; 以及至少一个真空处理室,其可以选自包括物理气相沉积(PVD)室,化学气相沉积(CVD)室,物理蚀刻室,化学蚀刻室,基板加热室,基板 冷却室,氧化处理室,还原处理室和灰化室,其中所述高频溅射装置还包括电连接到所述电极的可变阻抗机构,用于调节所述基板保持器上的所述基板的电位。

    VACUUM HEATING AND COOLING APPARATUS
    3.
    发明申请
    VACUUM HEATING AND COOLING APPARATUS 审中-公开
    真空加热和冷却装置

    公开(公告)号:US20110253037A1

    公开(公告)日:2011-10-20

    申请号:US13093906

    申请日:2011-04-26

    摘要: The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased. In an embodiment, the heating and cooling apparatus for heating and cooling a substrate in a vacuum, includes: a vacuum chamber; a radiation energy source positioned at the vacuum chamber on an atmosphere side for emitting a heating light; an incidence part for causing the heating light from the radiation energy source to enter the vacuum chamber; a substrate-holding member for holding the substrate; and a substrate-transfer mechanism for transferring the substrate held by the substrate-holding member in a heating state to a heating position proximal to the radiation energy source, and transferring the substrate and the substrate-holding member in a non-heating state to a non-heating position distant from the radiation energy source, wherein the substrate-holding member has a plate shape for placing the substrate thereon and has an outer shape larger than that of the incidence part for causing the heating light to enter the vacuum chamber.

    摘要翻译: 真空加热和冷却装置可以在保持高真空度的情况下在成膜处理之后快速地加热和冷却基板。 由于积聚而导致室内部件的温度升高受到抑制,基板间的温度变化也降低。 在一个实施例中,用于在真空中加热和冷却基板的加热和冷却装置包括:真空室; 辐射能源,其位于气氛侧的真空室处,用于发射加热光; 用于使来自辐射能源的加热光进入真空室的入射部分; 用于保持所述基板的基板保持部件; 以及基板转印机构,用于将由基板保持部件保持的基板以加热状态转印到靠近所述辐射能量源的加热位置,并将所述基板和所述基板保持部件以非加热状态转印到 远离辐射能源的非加热位置,其中基板保持构件具有用于将基板放置在其上的板形状,并且具有比用于使加热光进入真空室的入射部分大的外形。

    FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM
    4.
    发明申请
    FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM 审中-公开
    磁性元件的制造方法和存储介质

    公开(公告)号:US20100080894A1

    公开(公告)日:2010-04-01

    申请号:US12551753

    申请日:2009-09-01

    IPC分类号: B05D5/12

    摘要: The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization fixed layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.

    摘要翻译: 本发明提供一种具有高于常规MR比的MR比的磁阻元件的制造方法。 在本发明的一个实施例中,使用溅射法在基板上沉积磁化固定层,磁化自由层和隧道势垒层的步骤中,沉积磁化固定层的步骤沉积含有Co原子的铁磁层 通过使用包含Co原子,Fe原子和B原子的第一靶的共溅射法,和与第一靶相同的B原子含量的第二靶,通过共溅射法。

    High-frequency sputtering device
    5.
    发明授权
    High-frequency sputtering device 有权
    高频溅射装置

    公开(公告)号:US09017535B2

    公开(公告)日:2015-04-28

    申请号:US12727316

    申请日:2010-03-19

    摘要: Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

    摘要翻译: 通过使用控制高频溅射装置的自偏压的方法,提供了高质量的磁阻薄膜。 为了通过调整衬底电位来控制衬底的自偏压,根据本发明的高频溅射器件包括:腔室; 用于抽空腔室内部的排气装置; 气体引入装置,用于将气体供应到所述腔室中; 衬底保持器,其设置有衬底安装台; 旋转驱动装置,能够使基板保持架旋转; 设置有目标安装台的溅射阴极,并且被配置为使得所述目标安装台的表面不平行于所述基板安装台的表面; 设置在所述衬底保持器内的电极; 以及电连接到电极的可变阻抗机构,用于调节衬底保持器上的衬底电位。

    METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD
    8.
    发明申请
    METHOD OF MANUFACTURING MAGNETORESISTANCE ELEMENT AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD 审中-公开
    在制造方法中使用的磁阻元件和储存介质的制造方法

    公开(公告)号:US20110143460A1

    公开(公告)日:2011-06-16

    申请号:US13059464

    申请日:2009-08-31

    IPC分类号: H01L21/02

    摘要: An embodiment of the invention provides a method of manufacturing a magnetoresistance element with an MR ratio higher than that of the related art.A method of manufacturing a magnetoresistance element includes a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer provided between the magnetization fixed layer and the magnetization free layer on a substrate. In the method, the tunnel barrier layer is formed by arranging a target that has a diameter smaller than that of the substrate, contains a magnesium oxide sintered body, and has a relative density 90% or more so as to be inclined with respect to a surface to be deposited of the substrate, and forming a magnesium oxide layer using a sputtering method while rotating the substrate.

    摘要翻译: 本发明的实施例提供一种制造MR比高于现有技术的磁阻元件的方法。 制造磁阻元件的方法包括形成磁化固定层,磁化自由层和设置在基板上的磁化固定层和磁化自由层之间的隧道势垒层的步骤。 在该方法中,隧道势垒层通过配置直径小于基板的靶,含有氧化镁烧结体而形成,相对密度为90%以上,以相对于 表面沉积,并且在旋转衬底的同时使用溅射法形成氧化镁层。

    FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM
    10.
    发明申请
    FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM 审中-公开
    磁性元件的制造方法和存储介质

    公开(公告)号:US20100078310A1

    公开(公告)日:2010-04-01

    申请号:US12483704

    申请日:2009-06-12

    IPC分类号: C23C14/34

    摘要: The present invention provides a fabricating method of a magnetoresistive element having an MR ratio higher than a conventional MR ratio. In a step of depositing a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer on a substrate using a sputtering method in one embodiment of the present invention, the step of depositing the magnetization free layer deposits a ferromagnetic layer containing Co atoms, Fe atoms, and B atoms by a co-sputtering method using a first target containing Co atoms, Fe atoms and B atoms, and a second target having different B atom content from that of the first target.

    摘要翻译: 本发明提供一种具有高于常规MR比的MR比的磁阻元件的制造方法。 在本发明的一个实施例中,使用溅射法在基板上沉积磁化固定层,磁化自由层和隧道势垒层的步骤中,沉积无磁化层的步骤沉积含有Co原子的铁磁层 通过使用包含Co原子,Fe原子和B原子的第一靶的共溅射法,和与第一靶相同的B原子含量的第二靶,通过共溅射法。