公开(公告)号：US08143635B2

公开(公告)日：2012-03-27

申请号：US12293680

申请日：2007-03-23

申请人： Naoki Fukunaga ,  Hiroshi Osawa

发明人： Naoki Fukunaga ,  Hiroshi Osawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0095 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

摘要： The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode 15 composed of a translucent conductive oxide film on a p-type GaN layer 14 of a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrode 15 in a gas atmosphere including hydrogen (H2).

摘要翻译： 本发明提供了一种氮化镓化合物半导体发光器件，其防止由于氢退火引起的p型半导体层的电阻率的增加，并且降低了透光性导电氧化物膜的电阻率以降低驱动电压Vf， 其制造方法以及包括该灯的灯。 制造氮化镓系化合物半导体发光元件的方法包括：在氮化镓系化合物半导体器件的p型GaN层14上形成由透光性导电氧化物膜构成的正极15; 以及在包括氢（H 2）的气体气氛中退火正极15的氢退火工艺。

公开(公告)号：US07982232B2

公开(公告)日：2011-07-19

申请号：US12199767

申请日：2008-08-27

申请人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

发明人： Hiroshi Osawa ,  Naoki Fukunaga ,  Hironao Shinohara

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

摘要： There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, and a titanium oxide-based conductive film layer 15 laminated in this order, wherein a random concavo-convex surface 15 is formed on at least a part of the surface of the titanium oxide-based conductive film layer.

摘要翻译： 提供了具有优异的光提取效率和低波长不均匀性的半导体发光器件，其制造方法和灯。 半导体发光器件包括依次层叠的n型半导体层12，发光层13，p型半导体层14和氧化钛系导电膜层15， 凸面15形成在氧化钛系导电膜层的表面的至少一部分上。

公开(公告)号：US20110018022A1

公开(公告)日：2011-01-27

申请号：US12922422

申请日：2009-03-13

申请人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Masato Nakata ,  Hisayuki Miki ,  Naoki Fukunaga ,  Hironao Shinohara

发明人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Masato Nakata ,  Hisayuki Miki ,  Naoki Fukunaga ,  Hironao Shinohara

IPC分类号： H01L33/42 ,  H01L33/32

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device of the present invention includes: a substrate (101); a laminate semiconductor layer (20) including a light-emitting layer (105) formed on the substrate (101); a translucent electrode (109) formed on a top surface of the laminate semiconductor layer (20); and a junction layer (110) and a bonding pad electrode (107) formed on the translucent electrode (109), wherein the bonding pad electrode (107) has a laminate structure including a metal reflective layer (107a) and a bonding layer (107c) that are sequentially laminated from the translucent electrode (109) side, and the metal reflective layer (107a) is made of at least one kind of metal selected from the group consisting of Ag, Al, Ru, Rh, Pd, Os, Ir and Pt, or an alloy containing the metal.

摘要翻译： 本发明的半导体发光器件包括：衬底（101）; 包括形成在所述基板（101）上的发光层（105）的层叠半导体层（20）。 形成在层叠半导体层（20）的顶面上的透光性电极（109）。 以及形成在所述透光性电极（109）上的接合层（110）和接合焊盘电极（107），其中所述接合焊盘电极（107）具有包括金属反射层（107a）和接合层（107c）的层叠结构 ），并且金属反射层（107a）由选自Ag，Al，Ru，Rh，Pd，Os，Ir中的至少一种金属制成 和Pt，或含有金属的合金。

公开(公告)号：US20090278158A1

公开(公告)日：2009-11-12

申请号：US12097054

申请日：2006-12-13

申请人： Naoki Fukunaga ,  Hironao Shinohara ,  Hiroshi Osawa

发明人： Naoki Fukunaga ,  Hironao Shinohara ,  Hiroshi Osawa

IPC分类号： H01L33/00

CPC分类号： H01L33/025 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.

摘要翻译： 本发明提供了具有高发光效率和低驱动电压Vf的氮化镓基化合物半导体发光器件。 氮化镓基化合物半导体发光器件包括p型半导体层和包含掺杂剂并形成在p型半导体层上的透明导电氧化物膜。 在p型半导体层和透明导电氧化物膜之间的界面处的掺杂剂浓度高于透明导电氧化物膜的体掺杂剂浓度。 因此，p型半导体层和透明导电氧化物膜之间的接触电阻降低。

公开(公告)号：US06593165B2

公开(公告)日：2003-07-15

申请号：US10152732

申请日：2002-05-23

申请人： Takahiro Takimoto ,  Naoki Fukunaga ,  Isamu Ohkubo ,  Toshimitsu Kasamatsu ,  Mutsumi Oka ,  Masaru Kubo

发明人： Takahiro Takimoto ,  Naoki Fukunaga ,  Isamu Ohkubo ,  Toshimitsu Kasamatsu ,  Mutsumi Oka ,  Masaru Kubo

IPC分类号： H01L2100

CPC分类号： H01L27/144

摘要： A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalline silicon as an emitter diffusion source and an electrode. Elements included in the integrated circuit are isolated from each other using local oxidization.

公开(公告)号：US06313484B1

公开(公告)日：2001-11-06

申请号：US09472886

申请日：1999-12-28

申请人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

发明人： Isamu Ohkubo ,  Masaru Kubo ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Mutsumi Oka ,  Toshimitsu Kasamatsu

IPC分类号： H01L2715

CPC分类号： H01L27/1443

摘要： A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor crystal growth layer of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate and a second portion located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer of the first conductivity type located in a second region which is above the first portion of the first semiconductor crystal growth layer and does not overlap the first region; a second semiconductor crystal growth layer of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer and a surface of the buried diffusion layer; and a separation diffusion region having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section and a signal processing circuit section. The first region is located in the light-receiving device section. In the signal processing circuit section, the buried diffusion layer is in contact with the first portion of the first semiconductor crystal growth layer.

摘要翻译： 本发明的电路集成光接收装置包括：第一导电类型的半导体衬底; 设置在所述半导体衬底的表面上的第一导电类型的第一半导体晶体生长层，其中所述第一半导体晶体生长层包括其杂质浓度在远离所述半导体衬底的表面的方向上逐渐减小的第一部分，以及第二半导体晶体生长层 位于第一部分上方的第一部分的部分，其杂质浓度分布在深度方向上是均匀的; 位于第一半导体晶体生长层的第一部分之上并且不与第一区域重叠的第二区域中的第一导电类型的掩埋扩散层; 设置在第一半导体晶体生长层的表面和掩埋扩散层的表面之间的第二导电类型的第二半导体晶体生长层; 以及具有第一导电类型的分离扩散区域，用于将第二半导体晶体生长层分割成光接收装置部分和信号处理电路部分。 第一区域位于光接收装置部分中。 在信号处理电路部中，埋入扩散层与第一半导体晶体生长层的第一部分接触。

公开(公告)号：US6049117A

公开(公告)日：2000-04-11

申请号：US717347

申请日：1996-09-20

申请人： Naoki Fukunaga ,  Masaru Kubo

发明人： Naoki Fukunaga ,  Masaru Kubo

IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18 ,  H01L31/00 ,  H01L29/80 ,  H01L31/06 ,  H01L31/112

CPC分类号： H01L31/103 ,  H01L27/1446 ,  H01L31/035281 ,  H01L31/1876 ,  Y02E10/50

摘要： A light-receiving element includes a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed in a predetermined region on a surface of the semiconductor substrate of the first conductivity type; and at least one semiconductor region of the first conductivity type which is formed so as to extend from an upper surface of the first semiconductor layer of the second conductivity type to the surface of the semiconductor substrate of the first conductivity type, thereby dividing the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. In the light-receiving element, a specific resistance of the semiconductor substrate of the first conductivity type is set in a predetermined range such that a condition Xd.gtoreq.Xj is satisfied between a depth Xd of a depletion layer to be formed in the semiconductor substrate of the first conductivity type upon an application of an inverse bias and a diffusion depth Xj of the semiconductor region of the first conductivity type into the semiconductor substrate of the first conductivity type.

摘要翻译： 光接收元件包括第一导电类型的半导体衬底; 第一导电类型的第一半导体层，形成在第一导电类型的半导体衬底的表面上的预定区域中; 以及形成为从第二导电类型的第一半导体层的上表面延伸到第一导电类型的半导体衬底的表面的第一导电类型的至少一个半导体区域，从而将第一半导体 第二导电类型的层形成第二导电类型的多个半导体区域。 在光接收元件中，将第一导电类型的半导体衬底的电阻率设定在预定范围内，使得在半导体中要形成的耗尽层的深度Xd之间满足条件Xd> / = Xj 在第一导电类型的半导体衬底中施加反向偏置和第一导电类型的半导体区域的扩散深度Xj的第一导电类型的衬底。

公开(公告)号：US08436396B2

公开(公告)日：2013-05-07

申请号：US12993733

申请日：2009-05-20

申请人： Hironao Shinohara ,  Naoki Fukunaga

发明人： Hironao Shinohara ,  Naoki Fukunaga

IPC分类号： H01L33/00 ,  H01L29/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a top surface (106a) of the p-type semiconductor layer (106), wherein the translucent electrode layer (109) contains a dopant element, a content of the dopant element within the translucent electrode layer (109) decreases gradually toward the interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109), and in the translucent electrode layer (109) is formed a diffusion region in which an element constituting the p-type semiconductor layer (106) is diffused from the interface (109a) toward the inside of the translucent electrode layer (109).

摘要翻译： 本发明的半导体发光装置（1）包括：基板（101）; 通过在基板（101）上依次层叠n型半导体层（104），发光层（105）和p型半导体层（106）而形成的层叠半导体层（20）。 以及形成在所述p型半导体层（106）的上表面（106a）上的透光性电极层（109），其中，所述透光性电极层（109）含有掺杂剂元素，所述透光性电极内的所述掺杂剂元素的含量 层（109）朝向p型半导体层（106）和透光性电极层（109）的界面（109a）逐渐减小，在透光性电极层（109）中形成有构成 p型半导体层（106）从界面（109a）朝向透光性电极层（109）的内部扩散。

公开(公告)号：US08368103B2

公开(公告)日：2013-02-05

申请号：US12864440

申请日：2009-01-23

申请人： Hironao Shinohara ,  Naoki Fukunaga ,  Yasunori Yokoyama

发明人： Hironao Shinohara ,  Naoki Fukunaga ,  Yasunori Yokoyama

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention provides a compound semiconductor light-emitting element including: a substrate on which an n-type semiconductor layer (12), a light-emitting layer (13), and a p-type semiconductor layer (14) that are made of a compound semiconductor are stacked in this order; a positive electrode (15) made of a conductive translucent electrode; and a negative electrode (17) made of a conductive electrode, wherein the conductive translucent electrode of the positive electrode (15) is a transparent conductive film containing crystals composed of In2O3 having a hexagonal crystal structure.

摘要翻译： 本发明提供一种化合物半导体发光元件，包括：基板，其上形成有由n型半导体层（12），发光层（13）和p型半导体层（14）构成的基板 化合物半导体按顺序堆叠; 由导电性透光性电极构成的正极（15） 和由导电电极制成的负极（17），其中正极（15）的导电性透光电极是含有由具有六方晶体结构的In 2 O 3构成的晶体的透明导电膜。

公开(公告)号：US07947995B2

公开(公告)日：2011-05-24

申请号：US12065172

申请日：2007-11-08

申请人： Noritaka Muraki ,  Naoki Fukunaga

发明人： Noritaka Muraki ,  Naoki Fukunaga

IPC分类号： H01L33/20

CPC分类号： H01L33/20 ,  H01L33/18 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity.The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.

摘要翻译： 本发明的目的是提供具有优异的光提取效率和光分布均匀性的氮化镓基化合物半导体发光器件。 本发明的氮化镓基化合物半导体发光器件包括基板和层叠在基板上的氮化镓基化合物半导体层，其中在发光器件的至少一个侧表面上，半导体的底部（衬底侧） 层是相对于基板主表面倾斜5至85度的倒锥度，并且半导体层的顶部是相对于基板主表面倾斜95至175度的前锥度。