公开(公告)号：US20120104235A1

公开(公告)日：2012-05-03

申请号：US13344090

申请日：2012-01-05

申请人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

发明人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

IPC分类号： H01L27/146

CPC分类号： H04N5/3575 ,  H04N5/243 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457

摘要： A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

摘要翻译： 包括像素信号控制器的固态成像装置的前置放大器（列区域单元）。 像素信号控制器对于每个垂直信号线，由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平，并且根据图像信号放大器独立地设置增益 信号的电平。 在固态成像装置的后续阶段，提供了模数（A / D）转换器和信号延伸单元。 A / D转换器对像素信号进行数字化，参照来自像素信号检测器的分类信号，通过设置到像素信号放大器的增益来校正数字化像素信号，使得一个屏幕的信号的动态范围 延长了

公开(公告)号：US20120057042A1

公开(公告)日：2012-03-08

申请号：US13317376

申请日：2011-10-17

申请人： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

发明人： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

IPC分类号： H04N5/335

CPC分类号： H04N5/335

摘要： Solid-state image pickup device and processing method, with A/D conversion on pixel signals read from a pixel array part that effectively achieves reductions in power consumption, size and price while retaining a high-quality image output. The device includes a pixel array part, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read via a signal line is subjected to noise elimination processing in the CDS circuit, and is then inputted into the A/D converter. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The A/D converter can also be provided at the front stage of the CDS circuit.

摘要翻译： 固态图像拾取装置和处理方法，对从像素阵列部分读取的像素信号进行A / D转换，有效地实现功率消耗，尺寸和价格的降低，同时保持高质量的图像输出。 该器件包括像素阵列部分，CDS（相关双采样）电路和A / D转换器。 通过信号线读取的像素信号在CDS电路中进行噪声消除处理，然后被输入到A / D转换器。 A / D转换器包括＆Dgr＆amp; 调制器和数字滤波器，以执行高精度的A / D转换。 A / D转换器也可以在CDS电路的前级提供。

公开(公告)号：US08035105B2

公开(公告)日：2011-10-11

申请号：US12795442

申请日：2010-06-07

申请人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L29/76

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

摘要翻译： 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

公开(公告)号：US20110221021A1

公开(公告)日：2011-09-15

申请号：US13064787

申请日：2011-04-15

申请人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

发明人： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC分类号： H01L31/0232

CPC分类号： H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US08004019B2

公开(公告)日：2011-08-23

申请号：US11810440

申请日：2007-06-05

申请人： Hiroaki Fujita ,  Ryoji Suzuki ,  Nobuo Nakamura ,  Yasushi Maruyama

发明人： Hiroaki Fujita ,  Ryoji Suzuki ,  Nobuo Nakamura ,  Yasushi Maruyama

IPC分类号： H01L29/768

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

摘要翻译： 以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在 比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。 此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽 从而可以实现光电二极管PD的灵敏度的提高。

公开(公告)号：US07915574B2

公开(公告)日：2011-03-29

申请号：US12703694

申请日：2010-02-10

申请人： Junichi Kanai ,  Nobuo Nakamura

发明人： Junichi Kanai ,  Nobuo Nakamura

IPC分类号： H01L27/00

CPC分类号： H01L27/14645 ,  H01L21/266 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14689 ,  H04N5/3458 ,  H04N5/3532 ,  H04N5/3535 ,  H04N5/3537 ,  H04N5/35554 ,  H04N9/045 ,  H04N9/04511 ,  H04N2209/045

摘要： An imaging device including: an electronic shutter and a pixel array part. The pixel array part has a plurality of pixels with different characteristics of spectral sensitivity arranged in an array and which converts light transmitted through the pixel into an electric signal. The pixel array part has a plurality of color pixels and at least one clear pixel, the plurality of color pixels including (i) a first color filter pixel having a peak of spectral sensitivity characteristics in red, (ii) a second color filter pixel having a peak in blue, and (iii) a third color filter pixel having a peak in green. At least a portion of the plurality of color filter pixels is arranged in an oblique pixel array system and at least one clear pixel having a high transmittance is arranged in the oblique pixel array system at a given position of a given row and a given column with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel. A first read channel is exclusively coupled to the at least one clear pixel and a second read channel is exclusively coupled to the plurality of color filter pixels; and the electronic shutter is separately driven for the at least one clear pixel and for the plurality of color filter pixels.

摘要翻译： 一种成像装置，包括：电子快门和像素阵列部分。 像素阵列部分具有排列成阵列的具有不同光谱灵敏度特性的多个像素，并且将透过像素的光转换为电信号。 像素阵列部分具有多个彩色像素和至少一个透明像素，所述多个彩色像素包括（i）具有红色光谱灵敏度特性峰值的第一滤色器像素，（ii）具有 蓝色峰值，以及（iii）具有绿色峰值的第三滤色器像素。 多个滤色器像素的至少一部分被布置在倾斜像素阵列系统中，并且具有高透射率的至少一个透明像素被布置在倾斜像素阵列系统中的给定行和给定列的给定位置处， 相对于第一滤色器像素，第二滤色器像素和第三滤色器像素。 第一读取通道被独占地耦合到至少一个清除像素，并且第二读取通道被独占地耦合到多个滤色器像素; 并且对于至少一个透明像素和多个滤色器像素分别驱动电子快门。

公开(公告)号：US20110025420A1

公开(公告)日：2011-02-03

申请号：US12903333

申请日：2010-10-13

申请人： Hirofumi SUMI ,  Nobuo NAKAMURA ,  Shoji KAWAHITO

发明人： Hirofumi SUMI ,  Nobuo NAKAMURA ,  Shoji KAWAHITO

IPC分类号： H03G3/00

CPC分类号： H04N5/3575 ,  H04N5/243 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457

摘要： A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

摘要翻译： 包括像素信号控制器的固态成像装置的前置放大器（列区域单元）。 像素信号控制器对于每个垂直信号线，由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平，并且根据图像信号放大器独立地设置增益 信号的电平。 在固态成像装置的后续阶段，提供了模数（A / D）转换器和信号延伸单元。 A / D转换器对像素信号进行数字化，参照来自像素信号检测器的分类信号，通过设置到像素信号放大器的增益来校正数字化像素信号，使得一个屏幕的信号的动态范围 延长了

公开(公告)号：US07830436B2

公开(公告)日：2010-11-09

申请号：US10997511

申请日：2004-11-24

申请人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

发明人： Hirofumi Sumi ,  Nobuo Nakamura ,  Shoji Kawahito

IPC分类号： H04N5/335 ,  H04N5/235

CPC分类号： H04N5/3575 ,  H04N5/243 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457

摘要： A pre-amplifier (column region unit) of a solid-state imaging device includes a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.

摘要翻译： 固态成像装置的前置放大器（列区域单元）包括像素信号控制器。 像素信号控制器对于每个垂直信号线，由像素信号放大器的输出侧的像素信号检测器独立地检测每个像素信号的电平，并且根据图像信号放大器独立地设置增益 信号的电平。 在固态成像装置的后续阶段，提供了模数（A / D）转换器和信号延伸单元。 A / D转换器对像素信号进行数字化，参照来自像素信号检测器的分类信号，通过设置到像素信号放大器的增益来校正数字化像素信号，使得一个屏幕的信号的动态范围 延长了

公开(公告)号：US20100178725A1

公开(公告)日：2010-07-15

申请号：US12749128

申请日：2010-03-29

申请人： Hiroaki FUJITA ,  Ryoji SUZUKI ,  Nobuo NAKAMURA ,  Yasushi MARUYAMA

发明人： Hiroaki FUJITA ,  Ryoji SUZUKI ,  Nobuo NAKAMURA ,  Yasushi MARUYAMA

IPC分类号： H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

摘要翻译： 以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在 比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。 此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽 从而可以实现光电二极管PD的灵敏度的提高。

公开(公告)号：US20100141814A1

公开(公告)日：2010-06-10

申请号：US12703694

申请日：2010-02-10

申请人： Junichi Kanai ,  Nobuo Nakamura

发明人： Junichi Kanai ,  Nobuo Nakamura

IPC分类号： H04N5/335

CPC分类号： H01L27/14645 ,  H01L21/266 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14689 ,  H04N5/3458 ,  H04N5/3532 ,  H04N5/3535 ,  H04N5/3537 ,  H04N5/35554 ,  H04N9/045 ,  H04N9/04511 ,  H04N2209/045

摘要： An imaging device including: an electronic shutter and a pixel array part. The pixel array part has a plurality of pixels with different characteristics of spectral sensitivity arranged in an array and which converts light transmitted through the pixel into an electric signal. The pixel array part has a plurality of color pixels and at least one clear pixel, the plurality of color pixels including (i) a first color filter pixel having a peak of spectral sensitivity characteristics in red, (ii) a second color filter pixel having a peak in blue, and (iii) a third color filter pixel having a peak in green. At least a portion of the plurality of color filter pixels is arranged in an oblique pixel array system and at least one clear pixel having a high transmittance is arranged in the oblique pixel array system at a given position of a given row and a given column with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel. A first read channel is exclusively coupled to the at least one clear pixel and a second read channel is exclusively coupled to the plurality of color filter pixels; and the electronic shutter is separately driven for the at least one clear pixel and for the plurality of color filter pixels.

摘要翻译： 一种成像装置，包括：电子快门和像素阵列部分。 像素阵列部分具有排列成阵列的具有不同光谱灵敏度特性的多个像素，并且将透过像素的光转换为电信号。 像素阵列部分具有多个彩色像素和至少一个透明像素，所述多个彩色像素包括（i）具有红色光谱灵敏度特性峰值的第一滤色器像素，（ii）具有 蓝色峰值，以及（iii）具有绿色峰值的第三滤色器像素。 多个滤色器像素的至少一部分被布置在倾斜像素阵列系统中，并且具有高透射率的至少一个透明像素被布置在倾斜像素阵列系统中的给定行和给定列的给定位置处， 相对于第一滤色器像素，第二滤色器像素和第三滤色器像素。 第一读取通道被独占地耦合到至少一个清除像素，并且第二读取通道被独占地耦合到多个滤色器像素; 并且对于至少一个透明像素和多个滤色器像素分别驱动电子快门。