METAL SOURCE/DRAIN-BASED MOSFET AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20200098862A1

    公开(公告)日:2020-03-26

    申请号:US16562693

    申请日:2019-09-06

    Abstract: Disclosed is a metal source/drain-based field effect transistor having a structure that replaces a portion of a semiconductor of a source/drain with a metal and a method of manufacturing the same. By replacing the source/drain region with the source/drain metal region, increase of the parasitic resistance of a conventional three-dimensional MOSFET of several tens of nanometers, lattice mismatch of the source/drain during selective epitaxial growth, and self-heating effect can be fundamentally solved. Further, since the metal is deposited after the partial etching of the source/drain region or the selective epitaxial growth is partially performed under the conventional CMOS process, the process can be performed without using any additional mask.

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