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    Light-amplifying structures and methods for surface-enhanced Raman spectroscopy
    31.
    发明授权
    Light-amplifying structures and methods for surface-enhanced Raman spectroscopy 有权
    用于表面增强拉曼光谱的光放大结构和方法

    公开(公告)号：US07339666B2

    公开(公告)日：2008-03-04

    申请号：US10942079

    申请日：2004-09-14

    Applicant: Shih-Yuan Wang ,  Zhiyong Li ,  M. Saif Islam

    Inventor： Shih-Yuan Wang ,  Zhiyong Li ,  M. Saif Islam

    IPC: G01J3/44

    CPC classification number: G01N21/658

    Abstract: Structures for amplifying light include a resonant cavity in which an analyte may be positioned. The structures for amplifying light may be used to amplify the incident light employed in surface enhanced Raman spectroscopy (SERS). SERS systems employing the structures for amplifying light of the present invention and methods of performing SERS are also disclosed.

    Abstract translation: 用于放大光的结构包括其中可以定位分析物的谐振腔。 用于放大光的结构可以用于放大表面增强拉曼光谱（SERS）中使用的入射光。 还公开了采用本发明的光放大结构的SERS系统和执行SERS的方法。

    Metallic quantum dots fabricated by a superlattice structure
    32.
    发明授权
    Metallic quantum dots fabricated by a superlattice structure 有权

    公开(公告)号：US07309642B2

    公开(公告)日：2007-12-18

    申请号：US11271354

    申请日：2005-11-09

    Applicant: William M. Tong ,  M. Saif Islam

    Inventor： William M. Tong ,  M. Saif Islam

    IPC: H01L21/30 ,  H01L21/46

    CPC classification number: H01L49/006 ,  B82Y10/00 ,  G01N21/658 ,  Y10S977/888 ,  Y10S977/893

    Abstract: A method for forming quantum dots includes forming a superlattice structure that includes at least one nanostrip protruding from the superlattice structure, providing a quantum dot substrate, transferring the at least one nanostrip to the quantum dot substrate, and removing at least a portion of the at least one nanostrip from the substrate. The superlattice structure is formed by providing a superlattice substrate, forming alternating layers of first and second materials on the substrate to form a stack, cleaving the stack to expose the alternating layers, and etching the exposed alternating layers with an etchant that etches the second material at a greater rate than the first to form the at least one nanostrip.

    Nanowire interconnection and nano-scale device applications
    33.
    发明授权
    Nanowire interconnection and nano-scale device applications 失效
    纳米线互连和纳米级器件应用

    公开(公告)号：US07307271B2

    公开(公告)日：2007-12-11

    申请号：US10982051

    申请日：2004-11-05

    Applicant: M. Saif Islam ,  Philip J. Kuekes ,  Shih-Yuan Wang ,  Duncan R. Stewart ,  Shashank Sharma

    Inventor： M. Saif Islam ,  Philip J. Kuekes ,  Shih-Yuan Wang ,  Duncan R. Stewart ,  Shashank Sharma

    IPC: H01L29/06 ,  H01L31/036

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01S5/0261 ,  H01S5/041 ,  H01S5/183 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/938

    Abstract: A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.

    Abstract translation: 纳米柱廊结构及其制造和互连方法利用从半导体层的（111）水平表面几乎垂直地生长到另一层的另一水平表面的纳米线柱，以连接这些层。 纳米柱廊结构包括具有（111）水平表面的第一层; 具有另一水平表面的第二层; 第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。 第二层的一部分突出于绝缘体支撑件上，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面对第一层的（111）水平表面。 该结构还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线列，使得纳米线列将第一层连接到第二层。

    In situ excitation for Surface Enhanced Raman Spectroscopy
    34.
    发明授权
    In situ excitation for Surface Enhanced Raman Spectroscopy 失效
    表面增强拉曼光谱的原位激发

    公开(公告)号：US07102747B2

    公开(公告)日：2006-09-05

    申请号：US10964523

    申请日：2004-10-13

    Applicant: Shih-Yuan Wang ,  Zhiyong Li ,  M. Saif Islam

    Inventor： Shih-Yuan Wang ,  Zhiyong Li ,  M. Saif Islam

    IPC: G01J3/44 ,  G01N21/65

    CPC classification number: G01N21/658

    Abstract: Devices, systems, and methods using Surface Enhanced Raman Spectroscopy (SERS) are disclosed. A device for generating Raman scattered radiation comprises a laser source and a SERS-active structure. The laser source may be configured for emanating radiation from an emanating surface or by forming a depression in the laser source, which creates a region of increased evanescent field from the laser source. SERS systems and methods include a device for generating Raman scattered radiation with a detector configured to receive the Raman scattered radiation.

    Abstract translation: 公开了使用表面增强拉曼光谱（SERS）的器件，系统和方法。 用于产生拉曼散射辐射的装置包括激光源和SERS-活性结构。 激光源可以被配置用于从发射表面发射辐射，或者通过在激光源中形成凹陷，其产生从激光源增加的渐逝场的区域。 SERS系统和方法包括用配置成接收拉曼散射辐射的检测器产生拉曼散射辐射的装置。

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