公开(公告)号：US20110090703A1

公开(公告)日：2011-04-21

申请号：US12919194

申请日：2009-06-02

Applicant: Atsuyoshi Ishimori ,  Shozo Oshio ,  Yasuharu Ueno ,  Noriyasu Tanimoto

Inventor： Atsuyoshi Ishimori ,  Shozo Oshio ,  Yasuharu Ueno ,  Noriyasu Tanimoto

IPC: F21V5/00 ,  H01L33/50

CPC classification number: H01L33/502 ,  C04B35/44 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/764 ,  C04B2235/9661 ,  C09K11/7774 ,  H01L33/505 ,  H01L33/644 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

Abstract translation: 一种半导体发光装置，其包括将固体发光元件发射的一次光转换为二次光的固态发光元件和波长转换器。 波长转换器是包含具有石榴石晶体结构的含有荧光体的透明波长转换层的无机压块。 荧光体含有由选自Mg，Ca，Sr，Ba，Y，La，Gd，Tb和Lu中的至少一种元素组成的构成元素基团。 构成元素组的一部分被Ce 3+代替，Ce +的量相对于整个构成元素组为1原子％以下。 结果，提供了适合作为点光源的高功率和高度可靠的半导体发光装置。 此外，这种半导体发光装置通过传统使用的实际技术人员的简单应用来制造。

公开(公告)号：US07811472B2

公开(公告)日：2010-10-12

申请号：US12141616

申请日：2008-06-18

Applicant: Shozo Oshio

Inventor： Shozo Oshio

IPC: H01L33/00

CPC classification number: C09K11/7728 ,  C04B35/581 ,  C04B35/584 ,  C04B35/6265 ,  C04B35/6268 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3852 ,  C04B2235/3865 ,  C04B2235/3873 ,  C09K11/7715 ,  C09K11/7721 ,  C09K11/7729 ,  C09K11/7734 ,  H01L33/502 ,  H01L33/504 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H05B33/12 ,  Y02B20/181 ,  Y10S428/917 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A light-emitting device includes a phosphor layer containing a phosphor and a light-emitting element. The light-emitting element has an emission peak at 360 nm to less than 500 nm, and the phosphor is excited with light emitted by the light-emitting element. The light emitting device contains light-emitting component light emitted by the phosphor as output light. The phosphor contains a nitride phosphor or an oxynitride phosphor and alkaline-earth metal orthosilicate phosphor that are activated with Eu2+. The nitride phosphor or the oxynitride phosphor has an emission peak at 600 nm to less than 660 nm, and the alkaline-earth metal orthosilicate phosphor has the emission peak at 500 nm to less than 600 nm. An internal quantum efficiency of each phosphor is at least 80% under the excitation with light emitted by the light-emitting element.

Abstract translation: 发光装置包括含有荧光体和发光元件的荧光体层。 发光元件具有在360nm至小于500nm的发射峰，并且由发光元件发射的光激发荧光体。 发光装置包含由荧光体发射的发光成分光作为输出光。 荧光体包含用Eu 2+活化的氮化物荧光体或氧氮化物荧光体和碱土金属原硅酸盐荧光体。 氮化物荧光体或氧氮化物荧光体的发光峰值在600nm以上且小于660nm，碱土金属原硅酸盐荧光体的发光峰值在500nm以上且小于600nm。 在由发光元件发射的光的激发下，每个荧光体的内部量子效率为至少80％。

公开(公告)号：US20100176751A1

公开(公告)日：2010-07-15

申请号：US12663678

申请日：2009-04-17

Applicant: Shozo Oshio ,  Noriyasu Tanimoto

Inventor： Shozo Oshio ,  Noriyasu Tanimoto

IPC: H05B39/06 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L24/45 ,  H01L24/73 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01055 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor light-emitting device of the present invention includes at least one conductor A, that is patterned electrode, 2a, a conductor B, that is patterned electrode, 2b, and a solid-state light-emitting element 3 on one side of an insulating heat dissipating substrate 1. The solid-state light-emitting element 3 is mounted on the conductor A 2a but is not mounted on the conductor B 2b. The solid-state light-emitting element 3 is mounted in such a manner that the whole lower surface that is a surface opposing to a main light extraction surface of the solid-state light-emitting element 3 adheres to the conductor A 2a. When a mounting surface of the solid-state light-emitting element 3 is viewed from above, the conductor A 2a has an element mounting area on which the whole lower surface of the solid-state light-emitting element 3 is mounted and a plurality of outflow-adhesive capturing areas that are provided adjacent to the periphery of the element mounting area without directional bias with respect to the periphery of the element mounting area. The conductor B 2b is disposed in a portion adjacent to the periphery of the element mounting area other than the outflow-adhesive capturing areas while being electrically separated from the conductor A 2a. In this manner, a semiconductor light-emitting device can be provided that can be produced using orthodox practical techniques, can have high output power, can be mounted with high density, and can be designed with consideration given to the case of lighting failures.

Abstract translation: 本发明的半导体发光器件包括至少一个导体A，其为图案化电极2a，作为图案化电极2b的导体B和位于一侧的固态发光元件3 绝缘散热基板1.固体发光元件3安装在导体A 2a上，但不安装在导体B 2b上。 固体发光元件3以与固体发光元件3的主光吸收面相对的面的整个下表面附着于导体A 2a的方式安装。 当从上方观察固体发光元件3的安装面时，导体A 2a具有安装有固体发光元件3的整个下表面的元件安装区域，并且多个 与元件安装区域的周边相邻设置的相对于元件安装区域的周边没有方向偏置的流出粘合剂捕获区域。 导体B 2b配置在除了流出粘合剂捕获区域之外的与元件安装区域的周边相邻的部分中，同时与导体A 2a电分离。 以这种方式，可以提供可以使用正统实践技术制造的半导体发光器件，可以具有高输出功率，可以高密度地安装，并且可以考虑到照明故障的情况来设计。

公开(公告)号：US07592639B2

公开(公告)日：2009-09-22

申请号：US11585892

申请日：2006-10-25

Applicant: Toshihide Maeda ,  Shozo Oshio ,  Katsuaki Iwama ,  Hiromi Kitahara ,  Tadaaki Ikeda ,  Hidenori Kamei ,  Yasuyuki Hanada ,  Kei Sakanoue

Inventor： Toshihide Maeda ,  Shozo Oshio ,  Katsuaki Iwama ,  Hiromi Kitahara ,  Tadaaki Ikeda ,  Hidenori Kamei ,  Yasuyuki Hanada ,  Kei Sakanoue

IPC: H01L33/00

CPC classification number: C09K11/025 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/7735 ,  C09K11/7774 ,  C09K11/7792 ,  F21S6/00 ,  F21S6/003 ,  F21Y2115/10 ,  H01L24/45 ,  H01L33/502 ,  H01L33/54 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/181 ,  H05B33/14 ,  Y02B20/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0

Abstract translation: 芯片型发光半导体器件包括：基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13（半透明树脂）的混合物制成的发光层3。 黄/黄色荧光体颗粒2是一种硅酸盐荧光体，其吸收由蓝色LED1发射的蓝色光，以发射在550nm至600nm的波长范围内具有主发光峰的荧光，并且其包含作为主要 （Sr1-a1-b1-xBaa1Cab1Eux）2SiO4（0≤a1= 0.3,0 <= b1 <= 0.8,0

公开(公告)号：US20090200515A1

公开(公告)日：2009-08-13

申请号：US12425913

申请日：2009-04-17

Applicant: Shozo OSHIO

Inventor： Shozo OSHIO

IPC: C09K11/59 ,  C01B33/24 ,  C01B33/26 ,  C01F17/00

CPC classification number: C09K11/0883 ,  C01B21/0602 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/84 ,  C04B35/584 ,  C04B35/597 ,  C04B35/6265 ,  C04B35/6268 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3852 ,  C04B2235/3873 ,  C04B2235/425 ,  C04B2235/46 ,  C04B2235/6582 ,  C09K11/7734

Abstract: A nitridosilicate-based compound is produced by reacting an alkaline-earth metal compound capable of generating an alkaline-earth metal oxide by heating or a rare earth compound capable of generating a rare earth oxide by heating with at least a silicon compound, while the alkaline-earth metal compound or the rare earth compound is being reduced and nitrided by the reaction with carbon in an atmosphere of nitriding gas. Because of this, a nitridosilicate-based compound of high quality can be produced industrially at low cost.

Abstract translation: 通过加热产生碱土金属氧化物的碱土金属化合物或能够通过与至少一种硅化合物加热产生稀土氧化物的稀土化合物反应而制备氮化硅酸盐化合物，而碱 在氮化气体气氛下，通过与碳的反应，还原和稀土化合物或稀土化合物进行氮化。 因此，可以以低成本在工业上生产高质量的基于氮化硅酸盐的化合物。

公开(公告)号：US20080182127A1

公开(公告)日：2008-07-31

申请号：US12099555

申请日：2008-04-08

Applicant: Shozo Oshio

Inventor： Shozo Oshio

IPC: H01J1/63

CPC classification number: C09K11/7728 ,  C04B35/581 ,  C04B35/584 ,  C04B35/6265 ,  C04B35/6268 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3852 ,  C04B2235/3865 ,  C04B2235/3873 ,  C09K11/7715 ,  C09K11/7721 ,  C09K11/7729 ,  C09K11/7734 ,  H01L33/502 ,  H01L33/504 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H05B33/12 ,  Y02B20/181 ,  Y10S428/917 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract translation: 使用荧光体组合物制造发光装置，该荧光体组合物含有作为主要成分的荧光体主体，其组成如下：组成式：aM 3 N 2 N b B n N c Si 3“，其中”M“为选自Mg，Ca，Sr，Ba和Zn中的至少一种元素，”a“，” b“和”c“是满足0.2 <= a /（a + b）<= 0.95,0.05 <= b /（b + c）<= 0.8和0.4 <= c /（c + <= 0.95。 这使得能够提供发出白光的发光装置，同时满足高显色性和高光通量。

公开(公告)号：US07391060B2

公开(公告)日：2008-06-24

申请号：US11568149

申请日：2005-04-26

Applicant: Shozo Oshio

Inventor： Shozo Oshio

IPC: H01L31/00 ,  H05B33/00 ,  C09K11/08

CPC classification number: C09K11/7728 ,  C04B35/581 ,  C04B35/584 ,  C04B35/6265 ,  C04B35/6268 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3852 ,  C04B2235/3865 ,  C04B2235/3873 ,  C09K11/7715 ,  C09K11/7721 ,  C09K11/7729 ,  C09K11/7734 ,  H01L33/502 ,  H01L33/504 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  H05B33/12 ,  Y02B20/181 ,  Y10S428/917 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract translation: 使用荧光体组合物制造发光装置，该荧光体组合物含有作为主要成分的荧光体主体，其组成如下：组成式：aM 3 N 2 N b B n N c Si 3“，其中”M“为选自Mg，Ca，Sr，Ba和Zn中的至少一种元素，”a“，” b“和”c“是满足0.2 <= a /（a + b）<= 0.95,0.05 <= b /（b + c）<= 0.8和0.4 <= c /（c + <= 0.95。 这使得能够提供发出白光的发光装置，同时满足高显色性和高光通量。

公开(公告)号：US07294956B2

公开(公告)日：2007-11-13

申请号：US10491411

申请日：2002-09-27

Applicant: Toshihide Maeda ,  Shozo Oshio ,  Katsuaki Iwama ,  Hiromi Kitahara

Inventor： Toshihide Maeda ,  Shozo Oshio ,  Katsuaki Iwama ,  Hiromi Kitahara

IPC: H01J1/63 ,  H01L31/055

CPC classification number: H01L33/504 ,  C09K11/7734 ,  C09K11/7739 ,  C09K11/7789 ,  H01L33/502 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/8592 ,  H01L2924/181 ,  Y02E10/52 ,  H01L2924/00012

Abstract: The semiconductor light emitting device is composed of a combination of a near ultraviolet LED and a phosphor layer including a plurality of phosphors for absorbing near ultraviolet emitted by the near ultraviolet LED and for emitting fluorescence having an emission peak in a visible wavelength region, and the phosphor layer includes four kinds of phosphors, that is, a blue-based phosphor, a green-based phosphor, a red-based phosphor and a yellow-based phosphor. Thus, lowering of luminous flux derived from red-based light with low luminosity is compensated by yellow-based light with comparatively high luminosity, and the resultant white-based light can be well color balanced, and hence, a semiconductor light emitting device emitting white-based light with high luminous flux and a large Ra can be obtained.

Abstract translation: 半导体发光器件由近紫外LED和荧光体层的组合构成，该荧光体层包括用于吸收由近紫外LED发射的近紫外线的多个荧光体，并且用于发射在可见波​​长区域具有发射峰的荧光， 磷光体层包括四种荧光体，即蓝色荧光体，绿色荧光体，红色荧光体和黄色荧光体。 因此，由具有较低发光度的红色光源导出的光通量的降低由具有较高亮度的黄色光补偿，并且所得到的白色光可以很好地平衡色彩，因此，发出白色的半导体发光器件 可以获得具有高光通量和大Ra的基光。

公开(公告)号：US20070046169A1

公开(公告)日：2007-03-01

申请号：US11585892

申请日：2006-10-25

Applicant: Toshihide Maeda ,  Shozo Oshio ,  Katsuaki Iwama ,  Hiromi Kitahara ,  Tadaaki Ikeda ,  Hidenori Kamei ,  Yasuyuki Hanada ,  Kei Sakanoue

Inventor： Toshihide Maeda ,  Shozo Oshio ,  Katsuaki Iwama ,  Hiromi Kitahara ,  Tadaaki Ikeda ,  Hidenori Kamei ,  Yasuyuki Hanada ,  Kei Sakanoue

IPC: H01L33/00

CPC classification number: C09K11/025 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/7735 ,  C09K11/7774 ,  C09K11/7792 ,  F21S6/00 ,  F21S6/003 ,  F21Y2115/10 ,  H01L24/45 ,  H01L33/502 ,  H01L33/54 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/181 ,  H05B33/14 ,  Y02B20/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0

Abstract translation: 芯片型发光半导体器件包括：基板4; 安装在基板4上的蓝色LED1; 以及由黄色/黄色荧光体颗粒2和基材13（半透明树脂）的混合物制成的发光层3。 黄/黄色荧光体颗粒2是一种硅酸盐荧光体，其吸收由蓝色LED1发射的蓝色光，以发射在550nm至600nm的波长范围内具有主发光峰的荧光，并且其包含作为主要 组分，由化学式表示的化合物：（Sr 1-a 1-b 1-x Ba）a a1 Ca 2 Sb x x （0 <= a1 <= 0.3,0 <= b1 <= 0.8和0

公开(公告)号：US07101061B2

公开(公告)日：2006-09-05

申请号：US10688829

申请日：2003-10-17

Applicant: Hideo Nagai ,  Shozo Oshio ,  Masaaki Yuri

Inventor： Hideo Nagai ,  Shozo Oshio ,  Masaaki Yuri

IPC: F21V29/00 ,  F21V21/00

CPC classification number: F21K9/00 ,  F21V19/001 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/01322 ,  H01R12/7076 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emission apparatus that can restrict deterioration of resin used for the light emission apparatus, and that has a reasonable structure fit for actual use is provided, in which a light reflective layer is provided to cover the side surfaces of the chips 26 provided in the concave 2a. According to this, excitation light reflected by the phosphor layer 32, such as ultraviolet light, is reflected again by the light reflective layer 27. Therefore, the excitation light will not reach the resin layer 21, thereby restraining the deterioration of the resin. Moreover, the light reflective layer 27 covers the side surfaces of the chips 26, thereby efficiently conducting the heat emitted from the chips 26 to the metal substrate 20 via the resin layer 21. This improves the heat-dissipation efficiency of the chips 26.

Abstract translation: 提供一种可以限制用于发光装置的树脂的劣化并且具有适合实际使用的合理结构的发光装置，其中设置有光反射层以覆盖设置在该发光装置中的芯片26的侧表面 凹面2 a。 据此，由荧光体层32反射的激发光，例如紫外光，被光反射层27再次反射。 因此，激发光不会到达树脂层21，从而抑制树脂的劣化。 此外，光反射层27覆盖芯片26的侧表面，从而有效地将从芯片26发射的热量经由树脂层21传导到金属基板20。 这提高了芯片26的散热效率。