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公开(公告)号:US09252315B2
公开(公告)日:2016-02-02
申请号:US14678737
申请日:2015-04-03
IPC分类号: H01L31/00 , H01L31/0735 , C22C28/00 , H01L31/18 , H01L31/0304 , H01L31/078 , H01L31/0725 , C22C30/00
CPC分类号: H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
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公开(公告)号:US09018522B2
公开(公告)日:2015-04-28
申请号:US14512224
申请日:2014-10-10
IPC分类号: H01L31/00 , H01L31/0735 , H01L31/0304 , H01L31/0725
CPC分类号: H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
摘要翻译: 提供了具有至少0.9eV的带隙,即具有低锑(Sb)含量和增强的铟(In)含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物 (N)含量,实现了与GaAs和Ge衬底的实质晶格匹配,并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07≦̸ x≦̸ 0.18,0.025& nlE; y≦̸ 0.04和0.001& nlE; z≦̸ 0.03。
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33.
公开(公告)号:US20140097522A1
公开(公告)日:2014-04-10
申请号:US14051149
申请日:2013-10-10
IPC分类号: H01L29/06 , H01L21/764
CPC分类号: H01L29/0657 , H01L21/764 , H01L31/0687 , H02S50/00 , H02S50/10 , Y02E10/544 , Y02P70/521
摘要: The present disclosure provides multi-junction solar cell structures and fabrication methods thereof that improve electrical testing capability and reduce chip failure rates. In the present invention a special masking pattern is used in the layout such that all or some of the epitaxial layers are etched away in the corner areas of each solar cell. Consequently, the semiconductor substrate or one or more of the interconnections between junctions become accessible from the top (the side facing the sun) to make electrical connections.
摘要翻译: 本公开提供了提供电测试能力并降低芯片故障率的多结太阳能电池结构及其制造方法。 在本发明中,在布局中使用特殊的掩模图案,使得在每个太阳能电池的拐角区域中蚀刻所有或一些外延层。 因此,半导体衬底或接点之间的一个或多个互连可从顶部(朝向太阳的一侧)接近以进行电连接。
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公开(公告)号:US20130118566A1
公开(公告)日:2013-05-16
申请号:US13678389
申请日:2012-11-15
发明人: Rebecca Elizabeth Jones-Albertus , Pranob Misra , Michael J. Sheldon , Homan B. Yuen , Ting Liu , Daniel Derkacs , Vijit Sabnis , Michael West Wiemer , Ferran Suarez
IPC分类号: H01L31/078 , H01L31/18
CPC分类号: H01L31/0687 , H01L31/028 , H01L31/03048 , H01L31/06 , H01L31/0693 , H01L31/078 , H01L31/1844 , H01L31/1852 , H01L31/1856 , H01L31/1876 , Y02E10/544 , Y02P70/521
摘要: Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.
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公开(公告)号:US10355159B2
公开(公告)日:2019-07-16
申请号:US14935145
申请日:2015-11-06
IPC分类号: H01L31/18 , H01L31/065 , H01L31/0304 , H01L31/0687 , H01L31/0725 , H01L31/0735
摘要: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell.
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公开(公告)号:US20180358499A1
公开(公告)日:2018-12-13
申请号:US16103204
申请日:2018-08-14
发明人: REBECCA ELIZABETH JONES-ALBERTUS , DANIEL DERKACS , TING LIU , PRANOB MISRA , EVAN PICKETT , VIJIT SABNIS , MICHAEL J. SHELDON , FERRAN SUAREZ , MICHAEL WIEMER , HOMAN B. YUEN
IPC分类号: H01L31/078
CPC分类号: H01L31/078
摘要: Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.
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37.
公开(公告)号:US20180053874A1
公开(公告)日:2018-02-22
申请号:US15660471
申请日:2017-07-26
发明人: Ferran Suarez , Ting Liu , Arsen Sukiasyan
IPC分类号: H01L31/18 , H01L31/0735 , H01L31/0725
CPC分类号: H01L31/1852 , H01L21/02381 , H01L21/02455 , H01L21/02461 , H01L21/02466 , H01L21/02505 , H01L21/02538 , H01L31/0304 , H01L31/0687 , H01L31/0725 , H01L31/0735 , H01L31/1844 , H01L31/1856 , Y02E10/544
摘要: Semiconductor devices having an antimony-containing nucleation layer between a dilute nitride material and an underlying substrate are disclosed. Dilute nitride-containing multijunction solar cells incorporating (Al)InGaPSb/Bi nucleation layers exhibit high efficiency.
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公开(公告)号:US20170365732A1
公开(公告)日:2017-12-21
申请号:US15609760
申请日:2017-05-31
发明人: TING LIU , FERRAN SUAREZ , ARSEN SUKIASYAN , JORDAN LANG
IPC分类号: H01L31/0735 , H01L31/0725 , H01L31/028 , H01L31/0216 , H01L31/0304 , H01L31/18 , H01L31/0687
CPC分类号: H01L31/0735 , H01L31/02167 , H01L31/028 , H01L31/03044 , H01L31/03048 , H01L31/0687 , H01L31/0725 , H01L31/076 , H01L31/1848 , H01L31/188 , Y02E10/544 , Y02E10/548
摘要: High efficiency dilute nitride bismide alloys and multijunction photovoltaic cells incorporating the high efficiency dilute nitride bismide alloys are disclosed. Bismuth-containing dilute nitride subcells exhibit a high efficiency across a broad range of irradiance energies, a high short circuit current density, and a high open circuit voltage.
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公开(公告)号:US20170213922A1
公开(公告)日:2017-07-27
申请号:US15332036
申请日:2016-10-24
发明人: Ewelina Lucow , Lan Zhang , Sathya Chary , Ferran Suarez
IPC分类号: H01L31/0224 , H01L31/18 , H01L31/0216 , H01L31/0304 , H01L31/0725
CPC分类号: H01L31/022441 , H01L31/02168 , H01L31/02245 , H01L31/0304 , H01L31/0687 , H01L31/0725 , H01L31/076 , H01L31/184 , Y02E10/544 , Y02E10/548
摘要: This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
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公开(公告)号:US20170110613A1
公开(公告)日:2017-04-20
申请号:US14887021
申请日:2015-10-19
发明人: FERRAN SUAREZ , TING LIU , HOMAN B. YUEN , DAVID TANER BILIR , ARSEN SUKIASYAN , JORDAN LANG
IPC分类号: H01L31/0725 , H01L31/0735
摘要: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
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