公开(公告)号：US20060118793A1

公开(公告)日：2006-06-08

申请号：US11262163

申请日：2005-10-27

Applicant: Sung-Hoon Yang ,  Kunal Girotra ,  Byoung-June Kim

Inventor： Sung-Hoon Yang ,  Kunal Girotra ,  Byoung-June Kim

IPC: H01L33/00 ,  H01L31/113

CPC classification number: H01L29/458 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/4908

Abstract: A TFT array panel including a substrate, a gate line having a gate electrode, a gate insulating layer formed on the gate line, a data line having a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed on the data line and the drain electrode, and a pixel electrode connected to the drain electrode is provided. The TFT array panel further includes a protection layer including Si under at least one of the gate insulating layer and the passivation layer to enhance reliability.

Abstract translation: 一种TFT阵列面板，包括基板，具有栅极电极的栅极线，栅极线上形成的栅极绝缘层，具有与源极间隔开的源极和漏电极的数据线，形成在栅电极上的钝化层 数据线和漏电极，以及连接到漏电极的像素电极。 TFT阵列板还包括在栅极绝缘层和钝化层中的至少一个之下包括Si的保护层，以增强可靠性。

公开(公告)号：US20050148143A1

公开(公告)日：2005-07-07

申请号：US11071544

申请日：2005-03-03

Applicant: Sung-Hoon Yang ,  Wan-Shick Hong ,  Kwan-Wook Jung

Inventor： Sung-Hoon Yang ,  Wan-Shick Hong ,  Kwan-Wook Jung

IPC: G02F1/1368 ,  C23C16/30 ,  C23C16/42 ,  G02F1/1362 ,  H01L21/205 ,  H01L21/312 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/56

CPC classification number: G02F1/136227 ,  C23C16/30 ,  G02F2001/136222 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/458 ,  H01L29/4908 ,  H01L51/56

Abstract: The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.

Abstract translation: 本发明涉及一种用于气相沉积低介电绝缘膜的方法，使用其的薄膜晶体管及其制备方法，更具体地涉及可以显着改善蒸气的低介电绝缘膜的气相沉积方法 同时保持低介电绝缘膜的性能，从而解决了寄生电容问题，以实现高开口率结构，并且通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时可以减少处理时间，以形成 用于半导体器件的保护膜。 本发明还涉及使用该方法及其制备方法的薄膜晶体管。

公开(公告)号：US09128563B2

公开(公告)日：2015-09-08

申请号：US13366683

申请日：2012-02-06

Applicant: Suk Won Jung ,  Sung Hoon Yang ,  Sang-Youn Han ,  Seung Mi Seo ,  Mi-Seon Seo

Inventor： Suk Won Jung ,  Sung Hoon Yang ,  Sang-Youn Han ,  Seung Mi Seo ,  Mi-Seon Seo

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  G06F3/042 ,  G06F3/041 ,  G02F1/1333

CPC classification number: G06F3/042 ,  G02F1/13338 ,  G06F3/0412

Abstract: A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

Abstract translation: 显示装置包括：基板; 基板上的红外感测晶体管; 连接到红外感测晶体管的读出晶体管; 电源线; 以及所述红外感测晶体管上的遮光构件，其中所述红外感测晶体管在所述基板上包括遮光膜，与所述遮光膜接触并重叠并连接到电源线的第一栅电极， 与遮光膜重叠的第一栅电极以及第一半导体层上的第一源电极和漏电极，其中所述读出晶体管在所述衬底上包括第二栅电极，所述第二栅电极上的第二半导体层与所述第二栅电极重叠， 以及第二源极和漏极，第二半导体层，以及其中电源线和第一栅电极处于同一层。

公开(公告)号：US09116566B2

公开(公告)日：2015-08-25

申请号：US12917940

申请日：2010-11-02

Applicant: Sang-Youn Han ,  Yeon-Sik Ham ,  Sung-Hoon Yang ,  Keun-Chan Oh ,  Hee-Hwan Lee

Inventor： Sang-Youn Han ,  Yeon-Sik Ham ,  Sung-Hoon Yang ,  Keun-Chan Oh ,  Hee-Hwan Lee

IPC: G06F3/041 ,  G06F3/044 ,  G06F3/045 ,  G09G3/36

CPC classification number: G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  G06F2203/04103 ,  G09G3/36

Abstract: A liquid crystal display having a touch screen panel (TSP) function includes a sensor unit formed on the first substrate; a first sensor wire disposed on the first substrate and a second sensor wire extending perpendicular to the first sensor wire, wherein the sensor unit includes a first sensor electrode connected to the first sensor wire and a second sensor electrode connected to the second sensor wire, wherein said first sensor electrode and said second sensor electrode connect when touched, and said first and second sensor wires confirm a touch position by transmitting a sensing current through the connection between the first sensor electrode and the second sensor electrode, a trench is formed near the sensor unit and a silicon protrusion pattern to increase the sensitivity of the touch screen panel.

Abstract translation: 具有触摸屏面板（TSP）功能的液晶显示器包括形成在第一基板上的传感器单元; 设置在第一基板上的第一传感器线和垂直于第一传感器线延伸的第二传感器线，其中传感器单元包括连接到第一传感器线的第一传感器电极和连接到第二传感器线的第二传感器电极，其中 所述第一传感器电极和所述第二传感器电极在被触摸时连接，并且所述第一和第二传感器线通过传递感测电流通过第一传感器电极和第二传感器电极之间的连接来确认触摸位置，在传感器附近形成沟槽 单元和硅突起图案以增加触摸屏面板的灵敏度。

公开(公告)号：US09087750B2

公开(公告)日：2015-07-21

申请号：US12898839

申请日：2010-10-06

Applicant: Woong-Kwon Kim ,  Jung-Suk Bang ,  Sung-Hoon Yang ,  Sang-Youn Han ,  Suk-Won Jung ,  Byeong-Hoon Cho ,  Dae-Cheol Kim ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung-Mi Seo ,  Kun-Wook Han ,  Mi-Seon Seo

Inventor： Woong-Kwon Kim ,  Jung-Suk Bang ,  Sung-Hoon Yang ,  Sang-Youn Han ,  Suk-Won Jung ,  Byeong-Hoon Cho ,  Dae-Cheol Kim ,  Ki-Hun Jeong ,  Kyung-Sook Jeon ,  Seung-Mi Seo ,  Kun-Wook Han ,  Mi-Seon Seo

IPC: G06F3/042 ,  H01L27/12 ,  G06F3/041

CPC classification number: H01L27/1251 ,  G06F3/0412 ,  G06F3/042 ,  H01L27/1222 ,  H01L27/1233

Abstract: A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.

Abstract translation: 触摸屏基板包括基底，第一开关元件和感测红外光的第一感测元件。 第一开关元件包括第一开关栅电极，设置在第一开关栅电极上的第一有源图案，设置在第一有源图案上的第一开关源极和与第一开关源电极分开设置的第一开关漏电极。 第一感测元件包括连接到第一开关源电极的第一感测漏电极，与第一感测漏电极分开设置的第一感测源电极，设置在第一感测漏电极和第一感测源电极下方的第二有源图案，以及 包括第一非晶层，掺杂非晶层和第二非晶层，以及设置在第一感测漏电极和第一感测源电极上的第一感测栅电极。

公开(公告)号：US08698733B2

公开(公告)日：2014-04-15

申请号：US12157139

申请日：2008-06-06

Applicant: Sung-Jin Hong ,  Il-Pyung Lee ,  Jae-Byung Park ,  Yong-Woo Lee ,  Sung-Hoon Yang

Inventor： Sung-Jin Hong ,  Il-Pyung Lee ,  Jae-Byung Park ,  Yong-Woo Lee ,  Sung-Hoon Yang

IPC: G09G3/30 ,  G09G5/00 ,  G06T15/50 ,  G06T15/00 ,  G09G5/10 ,  G09G5/02 ,  G02B26/00

CPC classification number: G09G3/344 ,  G09G2300/08 ,  G09G2310/0251 ,  G09G2310/063 ,  G09G2310/068 ,  G09G2320/0209 ,  G09G2320/0233 ,  G09G2320/0257

Abstract: Disclosed is an electrophoretic display and a method for driving the electrophoretic display. The method for driving the electrophoretic display, which includes a first electrode, a second electrode, and an electrophoretic layer including electrophoretic particles disposed in a plurality of pixels receiving the voltage for driving from the first electrode and the second electrode and provided between the first electrode and the second electrode includes applying a reset voltage to the pixels, applying a reset compensation voltage including reversed polarity to the reset voltage to the pixels, applying an image display voltage including the same or different polarity during a predetermined time between the neighboring pixels, and applying an image display compensation voltage including reversed polarity to the image display voltage to the pixels during a predetermined time. The foregoing method provides a potential distribution which is symmetrical in the boundary region between the neighboring pixels such that the display size of the real image of each of the pixels is uniform and an afterimage may be prevented, thereby improving the display performance.

Abstract translation: 公开了电泳显示器和驱动电泳显示器的方法。 用于驱动电泳显示器的方法包括第一电极，第二电极和电泳层，该电泳层包括设置在多个像素中的电泳颗粒，所述电泳颗粒接收用于从第一电极和第二电极驱动的电压，并且设置在第一电极 并且所述第二电极包括向所述像素施加复位电压，向所述像素施加包括与所述复位电压相反的极性的复位补偿电压，在相邻像素之间的预定时间期间施加包括相同或不同极性的图像显示电压，以及 在预定时间期间将包括反极性的图像显示补偿电压施加到图像显示电压到像素。 上述方法提供了在相邻像素之间的边界区域中对称的电位分布，使得每个像素的实像的显示尺寸是均匀的，并且可以防止残像，从而提高显示性能。

公开(公告)号：US08647928B2

公开(公告)日：2014-02-11

申请号：US11646126

申请日：2006-12-27

Applicant: Sang-Woo Whangbo ,  Shi-Yul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

Inventor： Sang-Woo Whangbo ,  Shi-Yul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/4908 ,  H01L27/124 ,  H01L27/1288

Abstract: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

Abstract translation: 薄膜晶体管基板包括基底基板，栅极电极，栅极绝缘层，表面处理层，有源层，源电极和漏电极。 栅电极形成在基底基板上。 栅极绝缘层形成在基底基板上以覆盖栅电极。 通过用含氮气体处理栅极绝缘层，在栅极绝缘层上形成表面处理层，以防止漏电流。 在表面处理层上形成有源层以覆盖栅电极。 在有源层上形成彼此隔开预定距离的源电极和栅电极。

公开(公告)号：US08642367B2

公开(公告)日：2014-02-04

申请号：US13042348

申请日：2011-03-07

Applicant: Yu-Gwang Jeong ,  Young-Wook Lee ,  Sang-Gab Kim ,  Woo-Geun Lee ,  Min-Seok Oh ,  Jang-Soo Kim ,  Kap-Soo Yoon ,  Shin-Il Choi ,  Hong-Kee Chin ,  Seung-Ha Choi ,  Seung-Hwan Shim ,  Sung-Hoon Yang ,  Ki-Hun Jeong

Inventor： Yu-Gwang Jeong ,  Young-Wook Lee ,  Sang-Gab Kim ,  Woo-Geun Lee ,  Min-Seok Oh ,  Jang-Soo Kim ,  Kap-Soo Yoon ,  Shin-Il Choi ,  Hong-Kee Chin ,  Seung-Ha Choi ,  Seung-Hwan Shim ,  Sung-Hoon Yang ,  Ki-Hun Jeong

IPC: H01L21/02

CPC classification number: H01L27/127 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/66765

Abstract: Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

Abstract translation: 本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体 栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成 保护构件和保护构件的相应侧上的欧姆接触。 因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

公开(公告)号：US20130168683A1

公开(公告)日：2013-07-04

申请号：US13480233

申请日：2012-05-24

Applicant: Mi-Seon SEO ,  Cheol Kyu KIM ,  Sung Hoon YANG ,  Hee Young LEE ,  Sang Hyun JEON

Inventor： Mi-Seon SEO ,  Cheol Kyu KIM ,  Sung Hoon YANG ,  Hee Young LEE ,  Sang Hyun JEON

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66765 ,  H01L29/78621 ,  H01L29/78678

Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; and a source electrode and a drain electrode disposed on a portion of the semiconductor layer, wherein the semiconductor layer includes an ohmic contact layer, a channel layer, and a buffer layer, the buffer layer disposed between the channel layer and the ohmic contact layer, and the source electrode and the drain electrode contact a surface of the ohmic contact layer.

Abstract translation: 提供薄膜晶体管。 根据本发明的示例性实施例的薄膜晶体管包括：基板; 设置在所述基板上的栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体层; 以及设置在所述半导体层的一部分上的源电极和漏电极，其中所述半导体层包括欧姆接触层，沟道层和缓冲层，所述缓冲层设置在所述沟道层和所述欧姆接触层之间， 并且源电极和漏电极接触欧姆接触层的表面。

公开(公告)号：US20120032169A1

公开(公告)日：2012-02-09

申请号：US12929064

申请日：2010-12-28

Applicant: Sang-Youn Han ,  Jun-Ho Song ,  Kyung-Sook Jeon ,  Mi-Seon Seo ,  Sung-Hoon Yang ,  Suk-Won Jung ,  Seung Mi Seo

Inventor： Sang-Youn Han ,  Jun-Ho Song ,  Kyung-Sook Jeon ,  Mi-Seon Seo ,  Sung-Hoon Yang ,  Suk-Won Jung ,  Seung Mi Seo

IPC: H01L31/112 ,  H01L31/0368 ,  H01L31/0376

CPC classification number: H01L31/1129 ,  G02F1/13318 ,  H01L31/03762 ,  Y02E10/548

Abstract: The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.

Abstract translation: 本发明涉及能够通过防止光降解而提高光敏度的可见光线传感器和光传感器。 可见光线传感器可以包括：衬底，形成在衬底上的遮光构件，以及形成在遮光构件上的可见光线感测薄膜晶体管。 遮光构件可以由透明电极，带通滤光器或不透明金属制成。