公开(公告)号：US07413604B2

公开(公告)日：2008-08-19

申请号：US10942911

申请日：2004-09-17

申请人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

发明人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

IPC分类号： C30B1/02

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/6675 ,  H01L29/78672

摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

摘要翻译： 本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。 根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

公开(公告)号：US5023896A

公开(公告)日：1991-06-11

申请号：US356419

申请日：1989-05-25

申请人： Hisatake Yokouchi ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kouichi Koike ,  Masayuki Tsuneoka ,  Yoichi Onodera ,  Takakazu Funo

发明人： Hisatake Yokouchi ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kouichi Koike ,  Masayuki Tsuneoka ,  Yoichi Onodera ,  Takakazu Funo

IPC分类号： H05G1/64 ,  H01J29/45 ,  H01J31/38 ,  H04N5/32 ,  H05G1/60

CPC分类号： H05G1/60 ,  H01J29/45 ,  H01J31/38 ,  H04N5/32

摘要： An X-ray television apparatus applies an X-ray to an object to be inspected, converts the X-ray projection image of the object into an optical image by a fluorescent screen or an X-ray image intensifier, picks up the optical image by a TV camera, displays the video signal obtained by a TV monitor for fluoroscopic monitoring, and records radiograph of the object by using the video signal. Avalanche multiplication is caused on the photoconductive layer of the image pick-up tube of the TV camera so as to enable monitoring or imaging with high sensitivity at a low X-ray dose rate.

摘要翻译： X射线电视装置将X射线施加到被检查物体，通过荧光屏或X射线图像增强器将物体的X射线投影图像转换为光学图像，通过以下方式拾取光学图像： 电视摄像机显示由TV监视器获得的用于荧光透视监视的视频信号，并且通过使用视频信号记录对象的放射线照片。 在电视摄像机的摄像管的光电导层上引起雪崩乘法，以便以低X射线剂量率以高灵敏度进行监测或成像。

公开(公告)号：US4980736A

公开(公告)日：1990-12-25

申请号：US155809

申请日：1988-02-16

申请人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

发明人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

IPC分类号： H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

公开(公告)号：US4900975A

公开(公告)日：1990-02-13

申请号：US67229

申请日：1987-06-29

申请人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

发明人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

IPC分类号： H01L31/08 ,  H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

摘要翻译： 图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。

公开(公告)号：US4617248A

公开(公告)日：1986-10-14

申请号：US736149

申请日：1985-05-20

申请人： Kenkichi Tanioka ,  Keiichi Shidara ,  Takao Kuriyama ,  Yukio Takasaki ,  Tadaaki Hirai ,  Yasuhiko Nonaka ,  Eisuke Inoue

发明人： Kenkichi Tanioka ,  Keiichi Shidara ,  Takao Kuriyama ,  Yukio Takasaki ,  Tadaaki Hirai ,  Yasuhiko Nonaka ,  Eisuke Inoue

IPC分类号： H01J31/26 ,  H01J1/78 ,  H01J29/45 ,  H01L31/0248 ,  H01L31/08 ,  G03G5/08 ,  G03G5/09

CPC分类号： H01J29/456

摘要： A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.

摘要翻译： 公开了与光电导型的图像拾取管的靶相关的光电导膜的结构。 该感光膜主要由Se形成，Te的中心部分添加Te。 此外，被认为形成通过在Se中捕获电子而形成负空间电荷的Se和GaF 3等中的电子形成深阱陷阱的As被添加在与Te存在的区域相邻的区域中。 此外，存在GaF 3等的区域中的膜的厚度比迄今采用的值更薄（不小于20，不大于90）。

公开(公告)号：US4463279A

公开(公告)日：1984-07-31

申请号：US380779

申请日：1982-05-21

申请人： Keiichi Shidara ,  Kenkichi Tanioka ,  Teruo Uchida ,  Chushirou Kusano ,  Yukio Takasaki ,  Yasuhiko Nonaka ,  Eisuke Inoue

发明人： Keiichi Shidara ,  Kenkichi Tanioka ,  Teruo Uchida ,  Chushirou Kusano ,  Yukio Takasaki ,  Yasuhiko Nonaka ,  Eisuke Inoue

IPC分类号： H01L31/0248 ,  H01J29/45 ,  H01L31/08 ,  H01J31/38

CPC分类号： H01L31/08 ,  H01J29/456

摘要： A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.

摘要翻译： 一种光导电膜，其包含主要由硒制成的光导电层和在层的厚度方向上添加有碲的区域，其中所述区域的空穴流动方向上的一部分中的至少一个添加有 碲和与添加有碲的所述区域相邻的另一区域的空穴流中的一部分掺杂有选自氧化物，氟化物和属于II，III族的元素中的至少一种，以及 VII能够在硒中形成负空间电荷，浓度平均为10〜1重量％。 这种氧化物，氟化物和元素的典型实例包括CuO，In2O3，SeO2，V2O5，MoO3，WO3，GaF2 + L，InF3，Zn，Ga，In，Cl，I，Br等。 可以显着提高归因于高强度入射光的后图像特性。

公开(公告)号：US4380557A

公开(公告)日：1983-04-19

申请号：US287554

申请日：1981-07-28

申请人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

发明人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

IPC分类号： G03G5/08 ,  B05D3/02 ,  B05D3/04 ,  H01J9/233 ,  H01L21/205 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10

CPC分类号： H01J9/233

摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.

摘要翻译： 在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性 通过这种热处理高度改善了层。 例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。 当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为 观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。 增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

公开(公告)号：US4249106A

公开(公告)日：1981-02-03

申请号：US92021

申请日：1979-11-07

申请人： Eiichi Maruyama ,  Saburo Ataka ,  Kiyohisa Inao ,  Yoshinori Imamura ,  Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai

发明人： Eiichi Maruyama ,  Saburo Ataka ,  Kiyohisa Inao ,  Yoshinori Imamura ,  Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai

IPC分类号： H01J9/233 ,  H01J29/39 ,  H01J29/45

CPC分类号： H01J29/39 ,  H01J29/45 ,  H01J9/233

摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.

摘要翻译： 一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。 本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。 对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的

公开(公告)号：US07202144B2

公开(公告)日：2007-04-10

申请号：US11007188

申请日：2004-12-09

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L21/20

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

公开(公告)号：US20050170618A1

公开(公告)日：2005-08-04

申请号：US11007188

申请日：2004-12-09

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： G02F1/1368 ,  C30B1/06 ,  G02F1/133 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

摘要翻译： 通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。 半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在 与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1： 光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。