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公开(公告)号：US11156923B2
公开(公告)日：2021-10-26
申请号：US15557802
申请日：2015-12-10
Applicant: ASML Netherlands B.V.
Inventor： Hakki Ergün Cekli , Xing Lan Liu , Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren
Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.
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公开(公告)号：US11126093B2
公开(公告)日：2021-09-21
申请号：US16099452
申请日：2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Reiner Maria Jungblut , Leon Paul Van Dijk , Willem Seine Christian Roelofs , Wim Tjibbo Tel , Stefan Hunsche , Maurits Van Der Schaar
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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公开(公告)号：US11099486B2
公开(公告)日：2021-08-24
申请号：US16477619
申请日：2017-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexander Ypma , Dimitra Gkorou , Georgios Tsirogiannis , Thomas Leo Maria Hoogenboom , Richard Johannes Franciscus Van Haren
IPC: G03F7/20 , G05B19/418 , H01L21/66
Abstract: A technique to generate predicted data for control or monitoring of a production process to improve a parameter of interest. Context data associated with operation of the production process is obtained. Metrology/testing is performed on the product of the production process, thereby obtaining performance data. A context-to-performance model is provided to generate predicted performance data based on labeling of the context data with performance data. This is an instance of semi-supervised learning. The context-to-performance model may include the learner that performs semi-supervised labeling. The context-to-performance model is modified using prediction information related to quality of the context data and/or performance data. Prediction information may include relevance information relating to relevance of the obtained context data and/or obtained performance data to the parameter of interest. The prediction information may include model uncertainty information relating to uncertainty of the predicted performance data.
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34.发明授权公开(公告)号：US11036148B2
公开(公告)日：2021-06-15
申请号：US16700586
申请日：2019-12-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergün Cekli , Güneş Nakìbo{hacek over (g)}lu , Frank Johannes Jacobus Van Boxtel , Jean-Philippe Xavier Van Damme , Richard Johannes Franciscus Van Haren
IPC: G03F7/20
Abstract: A patterning device cooling system for thermally conditioning a patterning device of a lithographic apparatus, wherein the patterning device in use, is being irradiated by exposure radiation, wherein the patterning device cooling system comprises: a thermal conditioner configured to thermally condition the patterning device; and a controller configured to control the thermal conditioner to thermally condition the patterning device dependent on an amount of the exposure radiation absorbed by the patterning device.
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公开(公告)号：US10718604B2
公开(公告)日：2020-07-21
申请号：US16507297
申请日：2019-07-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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Patent Agency Ranking
36.发明授权公开(公告)号：US10061212B2
公开(公告)日：2018-08-28
申请号：US15477602
申请日：2017-04-03
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Youping Zhang
IPC: G03F7/20 , H01L21/66 , H01L23/544
CPC classification number: G03F7/70633 , G03F7/70516 , G03F7/70616 , G03F7/70683 , H01L22/00 , H01L22/12 , H01L23/544
Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure. Alternatively, the detected scattered radiation may comprise non-zero diffraction orders obtained from diffraction at said the periodic structure which have been disturbed in the near field by the second periodic structure.
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37.发明授权公开(公告)号：US09946165B2
公开(公告)日：2018-04-17
申请号：US15025856
申请日：2014-09-05
Applicant: ASML Netherlands B.V.
Inventor： Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
CPC classification number: G03F7/70616 , G03F7/70508 , G03F7/70525 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F9/7092 , G06F17/30572
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
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38.发明申请公开(公告)号：US20160223322A1
公开(公告)日：2016-08-04
申请号：US15013340
申请日：2016-02-02
Applicant: ASML Netherlands B.V.
Inventor： Xing Lan LIU , Hendrik Jan Hidde Smilde , Yue-Lin Peng , Hakki Ergün Cekli , Josselin Pello , Richard Johannes Franciscus Van Haren
CPC classification number: G01B11/272 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F9/7007
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.
Abstract translation: 公开了一种测量光刻处理参数的方法以及相关联的计算机程序和装置。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性包括由于第一和第二结构的未对准而产生的覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与至少每个目标结构的第一结构中的结构不对称有关的结构不对称特性，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称性的覆盖贡献。
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39.发明授权公开(公告)号：US11619884B2
公开(公告)日：2023-04-04
申请号：US17298640
申请日：2019-11-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Oktay Yildirim , Orion Jonathan Pierre Mouraille
Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process is described. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.
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公开(公告)号：US20230016664A1
公开(公告)日：2023-01-19
申请号：US17873406
申请日：2022-07-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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