公开(公告)号：US20240234127A1

公开(公告)日：2024-07-11

申请号：US18615539

申请日：2024-03-25

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/02118 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US12031209B2

公开(公告)日：2024-07-09

申请号：US17176984

申请日：2021-02-16

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Knisley

IPC: C23C16/18 ,  C07F7/00 ,  C07F7/02 ,  C07F7/22 ,  C07F7/30 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C07F7/003 ,  C07F7/025 ,  C07F7/2224 ,  C07F7/2284 ,  C07F7/30 ,  C23C16/18 ,  C23C16/45534

Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

公开(公告)号：US20230382933A1

公开(公告)日：2023-11-30

申请号：US18232421

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56

CPC classification number: C07F11/005 ,  C23C16/45553 ,  C23C16/4408 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56 ,  C23C16/0227 ,  C23C16/0209

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20230295794A1

公开(公告)日：2023-09-21

申请号：US18201442

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/32 ,  H01L21/02

CPC classification number: C23C16/042 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/32 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02211 ,  H01L21/0217

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20230197438A1

公开(公告)日：2023-06-22

申请号：US18109493

申请日：2023-02-14

Applicant: Applied Materials, Inc.

Inventor： Aaron Dangerfield ,  Jesus Candelario Mendoza-Gutierrez ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/0245 ,  C23C16/308 ,  C23C16/45525 ,  H01L21/02118 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/31138

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. A substrate with a metal surface, a dielectric surface and an aluminum oxide surface has a blocking layer deposited on the metal surface using an alkylsilane.

公开(公告)号：US11549181B2

公开(公告)日：2023-01-10

申请号：US16576341

申请日：2019-09-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Methods for the formation of films comprising Si, C, O and N are provided. Certain methods involve sequential exposures of a hydroxide terminated substrate surface to a silicon precursor and an alcohol-amine to form a film with hydroxide terminations. Certain methods involved sequential exposures of hydroxide terminated substrate surface to a silicon precursor and a diamine to form a film with an amine terminated surface, followed by sequential exposures to a silicon precursor and a diol to form a film with a hydroxide terminated surface.

公开(公告)号：US11545354B2

公开(公告)日：2023-01-03

申请号：US16935385

申请日：2020-07-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Bhaskar Bhuyan ,  Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Xinke Wang ,  Mark Saly

IPC: H01L21/02 ,  B05D1/00

Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

公开(公告)号：US11532474B2

公开(公告)日：2022-12-20

申请号：US16989079

申请日：2020-08-10

Applicant: Applied Materials, Inc. ,  Wayne State University

Inventor： Thomas Knisley ,  Keenan N. Woods ,  Mark Saly ,  Charles H. Winter ,  Stefan Cwik

IPC: H01L21/02 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films on a substrate are described. The substrate is exposed to a rhenium precursor and a reducing agent to form the rhenium-containing film (e.g., metallic rhenium, rhenium nitride, rhenium oxide, rhenium carbide). The exposures can be sequential or simultaneous. The rhenium-precursors are substantially free of halogen.

公开(公告)号：US11515149B2

公开(公告)日：2022-11-29

申请号：US15654185

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  David Thompson ,  Abhijit Basu Mallick ,  Tejasvi Ashok ,  Pramit Manna

IPC: C23C16/22 ,  H01L21/02 ,  H01L21/762

Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

公开(公告)号：US20220372616A1

公开(公告)日：2022-11-24

申请号：US17315223

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/56 ,  C23C16/02

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.