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    DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING
    32.
    发明公开
    DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING 审中-公开

    公开(公告)号：US20230255064A1

    公开(公告)日：2023-08-10

    申请号：US18301805

    申请日：2023-04-17

    Applicant: Applied Materials, Inc.

    Inventor： Chung-chia CHEN ,  Ji Young CHOUNG ,  Dieter HAAS ,  Yu-hsin LIN ,  Jungmin LEE ,  Wen-Hao WU ,  Si Kyoung KIM

    IPC: H10K59/122 ,  H10K50/844 ,  H10K71/00

    CPC classification number: H10K59/122 ,  H10K50/844 ,  H10K71/00 ,  H10K2102/00

    Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

    DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING
    33.
    发明申请
    DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING 有权

    公开(公告)号：US20230041252A1

    公开(公告)日：2023-02-09

    申请号：US17881358

    申请日：2022-08-04

    Applicant: Applied Materials, Inc.

    Inventor： Chung-Chia CHEN ,  Ji Young CHOUNG ,  Dieter HAAS ,  Yu-hsin LIN ,  Jungmin LEE ,  Wen-Hao WU ,  Si Kyoung KIM

    IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

    Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

    THIN FILM ENCAPSULATION-THIN ULTRA HIGH BARRIER LAYER FOR OLED APPLICATION
    39.
    发明申请
    THIN FILM ENCAPSULATION-THIN ULTRA HIGH BARRIER LAYER FOR OLED APPLICATION 有权
    薄膜封装超薄高阻隔层用于OLED应用

    公开(公告)号：US20140264297A1

    公开(公告)日：2014-09-18

    申请号：US14203426

    申请日：2014-03-10

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Dieter HAAS

    IPC: H01L51/52

    CPC classification number: H01L51/5253

    Abstract: A method and apparatus for depositing a multilayer barrier structure is disclosed herein. In one embodiment, a thin barrier layer formed over an organic semiconductor includes a non-conformal organic layer, an inorganic layer formed over the non-conformal organic layer, a metallic layer formed over the inorganic layer and a second organic layer formed over the metallic layer. In another embodiment, a method of depositing a barrier layer includes forming an organic semiconductor device over the exposed surface of a substrate, depositing an inorganic layer using CVD, depositing a metallic layer comprising one or more metal oxide or metal nitride layers over the inorganic layer by ALD, each of the metal oxide or metal nitride layers comprising a metal, wherein the metal is selected from the group consisting of aluminum, hafnium, titanium, zirconium, silicon or combinations thereof and depositing an organic layer over the metallic layer.

    Abstract translation: 本文公开了一种用于沉积多层阻挡结构的方法和装置。 在一个实施例中，形成在有机半导体上的薄势垒层包括非共形有机层，在非保形有机层上形成的无机层，形成在无机层上的金属层和形成在金属上的第二有机层 层。 在另一个实施例中，沉积阻挡层的方法包括在衬底的暴露表面上形成有机半导体器件，使用CVD沉积无机层，在无机层上沉积包含一个或多个金属氧化物或金属氮化物层的金属层 通过ALD，每个金属氧化物或金属氮化物层包含金属，其中金属选自铝，铪，钛，锆，硅或其组合，并在金属层上沉积有机层。

    SI-AP OVERHANG DISPLAY
    40.
    发明申请
    SI-AP OVERHANG DISPLAY 有权

    公开(公告)号：US20250048845A1

    公开(公告)日：2025-02-06

    申请号：US18774523

    申请日：2024-07-16

    Applicant: Applied Materials, Inc.

    Inventor： Jungmin LEE ,  Dieter HAAS ,  Yu-hsin LIN ,  Chung-chia CHEN ,  Ji Young CHOUNG

    IPC: H10K59/122

    Abstract: The present disclosure provides sub-pixels. The sub-pixels include a plurality of pixel structures separating a plurality of anodes. The plurality of pixel structures are disposed over a substrate. A plurality of overhang structures are disposed over the plurality of pixel structures. Each overhang structure of the plurality of overhang structures include an upper portion including amorphous silicon disposed over a lower portion including germanium. A bottom surface of the upper portion extends laterally past an upper surface of the lower portion. An organic light emitting diode (OLED) material is disposed over an upper surface of the plurality of anodes and an upper surface of the plurality of pixel structures. A cathode is disposed over the OLED material and the upper surface of the plurality of pixel structures.

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