公开(公告)号：US20230025937A1

公开(公告)日：2023-01-26

申请号：US17955996

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US11488830B2

公开(公告)日：2022-11-01

申请号：US16549756

申请日：2019-08-23

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US11245022B2

公开(公告)日：2022-02-08

申请号：US16876276

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C. H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC: H01L29/51 ,  H01L29/40 ,  H01L29/49

Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20210384035A1

公开(公告)日：2021-12-09

申请号：US17225667

申请日：2021-04-08

Applicant: Applied Materials, Inc.

Inventor： Ilanit Fisher ,  Shih Chung Chen ,  Kedi Wu ,  Ashley Lin ,  Chi-Chou Lin ,  Yi Xu ,  Yu Lei ,  Mandyam Sriram ,  Wen Ting Chen ,  Srinivas Gandikota ,  Chenfei Shen ,  Naomi Yoshida ,  He Ren

IPC: H01L21/285 ,  H01L21/02 ,  C23C16/14 ,  C23C16/02

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a fluorine-free metallic tungsten film. The fluorine-free metallic tungsten film is exposed to a second process condition to deposit a tungsten film on the fluorine-free metallic tungsten film.

公开(公告)号：US11075276B2

公开(公告)日：2021-07-27

申请号：US16594596

申请日：2019-10-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Yongjing Lin ,  Shih Chung Chen ,  Naomi Yoshida ,  Lin Dong ,  Liqi Wu ,  Rongjun Wang ,  Steven Hung ,  Karla Bernal Ramos ,  Yixiong Yang ,  Wei Tang ,  Sang-Ho Yu

IPC: H01L29/49 ,  H01L29/40 ,  H01L21/285 ,  H01L21/02

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

公开(公告)号：US10665450B2

公开(公告)日：2020-05-26

申请号：US16104352

申请日：2018-08-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Yixiong Yang ,  Paul F. Ma ,  Wei V. Tang ,  Wenyu Zhang ,  Shih Chung Chen ,  Chen Han Lin ,  Chi-Chou Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Siddarth Krishnan

IPC: H01L21/02 ,  H01L29/40 ,  H01L21/28 ,  H01L29/51 ,  H01L29/49

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

公开(公告)号：US20200063263A1

公开(公告)日：2020-02-27

申请号：US16549756

申请日：2019-08-23

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US10553425B2

公开(公告)日：2020-02-04

申请号：US15714162

申请日：2017-09-25

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Jessica S. Kachian ,  Naomi Yoshida ,  Mei Chang ,  Mary Edmonds ,  Andrew C. Kummel ,  Sang Wook Park ,  Hyunwoong Kim

IPC: H01L21/02

Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

公开(公告)号：US20190019874A1

公开(公告)日：2019-01-17

申请号：US16033880

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Seshadri Ganguli ,  Shih Chung Chen ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Lin Dong ,  Naomi Yoshida ,  Sang Ho Yu ,  Liqi Wu

IPC: H01L29/51 ,  H01L29/49 ,  H01L21/28

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

公开(公告)号：US20190013211A1

公开(公告)日：2019-01-10

申请号：US15972434

申请日：2018-05-07

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Naomi Yoshida ,  Soumendra N. Barman ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: Methods are described herein for etching tantalum-containing films with various potential additives while still retaining other desirable patterned substrate portions. The methods include exposing a tantalum-containing film to a chlorine-containing precursor (e.g. Cl2) with a concurrent plasma. The plasma-excited chlorine-containing precursor selectively etches the tantalum-containing film and other industrially-desirable additives. Chlorine is then removed from the substrate processing region. A hydrogen-containing precursor (e.g. H2) is delivered to the substrate processing region (also with plasma excitation) to produce a relatively even and residue-free tantalum-containing surface. The methods presented remove tantalum while retaining materials elsewhere on the patterned substrate.