公开(公告)号：US12110584B2

公开(公告)日：2024-10-08

申请号：US17361231

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: C23C16/30 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L21/02

CPC classification number: C23C16/305 ,  C23C16/04 ,  C23C16/06 ,  C23C16/4485 ,  H01L21/0228

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US20240332014A1

公开(公告)日：2024-10-03

申请号：US18614045

申请日：2024-03-22

Applicant: Applied Materials, Inc ,  National University of Singapore

Inventor： Xinke Wang ,  Long Liu ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/324

CPC classification number: H01L21/02573 ,  H01L21/02115 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/324

Abstract: Molecular layer deposition (MLD) is used to provide conformal and uniform doping technology for HAR and reentrant structures. MLD is used to deposit a conformal carbon-based film that contains a doping element. Thermal annealing is then used to make the doping element diffuse into the semiconductor material. For HAR structures, a conformal layer is used with low temperature doping, precise control, and the carbon-based film can be easily removed during doping or after doping. The amount of doping can be controlled by changing the thickness of MLD carbon-based film.

公开(公告)号：US11987875B2

公开(公告)日：2024-05-21

申请号：US18096347

申请日：2023-01-12

Applicant: Applied Materials, Inc.

Inventor： Yong Wang ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  C23C22/77 ,  C23C22/82

CPC classification number: C23C16/0227 ,  C23C16/04 ,  C23C16/56 ,  C23C22/77 ,  C23C22/82

Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

公开(公告)号：US20230175120A1

公开(公告)日：2023-06-08

申请号：US18062010

申请日：2022-12-05

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Sze Chieh Tan ,  Vicknesh Sahmuganathan ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  John Sudijono ,  Jiteng Gu ,  Kian Ping Loh

IPC: C23C16/27 ,  H01J37/32

CPC classification number: C23C16/274 ,  C23C16/279 ,  H01J37/32192 ,  H01J2237/3321

Abstract: Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.

公开(公告)号：US11658025B2

公开(公告)日：2023-05-23

申请号：US17151240

申请日：2021-01-18

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/02211 ,  C23C16/345 ,  C23C16/4408 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/0228

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US11621161B2

公开(公告)日：2023-04-04

申请号：US17081482

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: H01L21/02 ,  C23C16/455

Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.

公开(公告)号：US11569088B2

公开(公告)日：2023-01-31

申请号：US17081498

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  John Sudijono

IPC: H01L21/31 ,  H01L21/02

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.

公开(公告)号：US20220411918A1

公开(公告)日：2022-12-29

申请号：US17361231

申请日：2021-06-28

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: C23C16/30 ,  C23C16/06 ,  C23C16/448 ,  C23C16/04

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US20220130664A1

公开(公告)日：2022-04-28

申请号：US17081482

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: H01L21/02 ,  C23C16/455

Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.

公开(公告)号：US20220130659A1

公开(公告)日：2022-04-28

申请号：US17081498

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Yong Wang ,  Andrea Leoncini ,  Doreen Wei Ying Yong ,  John Sudijono

IPC: H01L21/02

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.