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公开(公告)号:US10991406B2
公开(公告)日:2021-04-27
申请号:US16200276
申请日:2018-11-26
Applicant: Arm Limited
Inventor: Akhilesh Ramlaut Jaiswal , Mudit Bhargava
Abstract: Disclosed are techniques for forming and operating magnetic memory devices.
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公开(公告)号:US20200168261A1
公开(公告)日:2020-05-28
申请号:US16200276
申请日:2018-11-26
Applicant: Arm Limited
Inventor: Akhilesh Ramlaut Jaiswal , Mudit Bhargava
Abstract: Disclosed are techniques for forming and operating magnetic memory devices.
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33.
公开(公告)号:US20190325959A1
公开(公告)日:2019-10-24
申请号:US15960365
申请日:2018-04-23
Applicant: Arm Limited
Inventor: Mudit Bhargava , Brian Tracy Cline , George McNeil Lattimore , Bal S. Sandhu
Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate transfer of stored values between the volatile and non-volatile memory bitcells.
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34.
公开(公告)号:US20190325919A1
公开(公告)日:2019-10-24
申请号:US15960405
申请日:2018-04-23
Applicant: Arm Limited
Inventor: Mudit Bhargava , Shidhartha Das , George McNeil Lattimore , Brian Tracy Cline
Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate copying of memory states between the volatile and non-volatile memory bitcells.
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公开(公告)号:US09691455B2
公开(公告)日:2017-06-27
申请号:US14796744
申请日:2015-07-10
Applicant: ARM Limited
Inventor: Mudit Bhargava
Abstract: Various implementations described herein are directed to an integrated circuit for address decoding. The integrated circuit may include an input circuit configured to provide an encoded address via multiple address lines. The integrated circuit may include an address decoding circuit configured to directly translate the encoded address provided via the multiple address lines. The address decoding circuit may include multiple decoding blocks with each block having a first stage coupled to a second stage. The first stage of each block may include a first number of decoding transistors configured to decode first address bit values from the multiple address lines. The second stage of each block may include a second number of decoding transistors configured to decode second address data bit values from the multiple address lines. The integrated circuit may include an output circuit configured to provide a decoded address to a wordline driver circuit in memory.
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公开(公告)号:US12223010B2
公开(公告)日:2025-02-11
申请号:US17339895
申请日:2021-06-04
Applicant: Arm Limited
Inventor: Supreet Jeloka , Mudit Bhargava , Saurabh Pijuskumar Sinha , Rahul Mathur
Abstract: According to one implementation of the present disclosure, a method includes performing a spatial alignment of at least one of first or second data tiers of a circuit; and performing a computation based on the spatial alignment of the at least one of the first and second data tiers. According to another implementation of the present disclosure, a circuit includes: a compute circuitry; and at least first and second data tiers of two or more data tiers positioned at least partially overlapping one another. In an example, each of the at least first and second data tiers is coupled to the compute circuitry. In certain implementations, the positioning of the first and second data tiers at least partially overlapping one another corresponds to a spatial alignment.
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公开(公告)号:US12086453B2
公开(公告)日:2024-09-10
申请号:US17103632
申请日:2020-11-24
Applicant: Arm Limited
Inventor: Mudit Bhargava , Paul Nicholas Whatmough , Supreet Jeloka , Zhi-Gang Liu
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0679 , G06N3/063 , G11C11/54
Abstract: A memory for an artificial neural network (ANN) accelerator is provided. The memory includes a first bank, a second bank and a bank selector. Each bank includes at least two word lines and a plurality of write word selectors. Each word line stores a plurality of words, and each word has a plurality of bytes. Each write word selector has an input port and a plurality of output ports, is coupled to a corresponding word in each word line, and is configured to select a byte of the corresponding word of a selected word line based on a byte select signal. The bank selector is coupled to the write word selectors of the first bank and the second bank, and configured to select a combination of write word selectors from at least one of the first bank and the second bank based on a bank select signal.
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公开(公告)号:US20240029811A1
公开(公告)日:2024-01-25
申请号:US17814418
申请日:2022-07-22
Applicant: Arm Limited
Inventor: Pranay Prabhat , Mudit Bhargava , Fernando Garcia Redondo
IPC: G11C29/44
CPC classification number: G11C29/44
Abstract: Briefly, embodiments, such as methods and/or systems for operations and/or procedures to test magnetic memory devices. In a particular implementation, a bit error rate of a magnetic memory device may be estimated based, at least in part, on an observed bit error rate in the presence of an externally applied magnetic field.
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公开(公告)号:US11881263B2
公开(公告)日:2024-01-23
申请号:US17221670
申请日:2021-04-02
Applicant: Arm Limited
Inventor: Akhilesh Ramlaut Jaiswal , Mudit Bhargava
IPC: G11C14/00 , G11C11/16 , G11C11/418 , G11C11/419 , H01F10/32 , G11C13/00 , H10N50/80 , H10N50/85
CPC classification number: G11C14/0081 , G11C11/1655 , G11C11/1657 , G11C11/1673 , G11C11/1675 , G11C11/418 , G11C11/419 , G11C11/161 , G11C13/004 , G11C13/0007 , G11C13/0026 , G11C13/0028 , G11C13/0069 , G11C14/009 , G11C2213/31 , G11C2213/32 , H01F10/329 , H01F10/3254 , H10N50/80 , H10N50/85
Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate transfer of stored values between the volatile and non-volatile memory bitcells.
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公开(公告)号:US11841943B2
公开(公告)日:2023-12-12
申请号:US16584865
申请日:2019-09-26
Applicant: Arm Limited
Inventor: Joshua Randall , Joel Thornton Irby , Carl Wayne Vineyard , Mudit Bhargava
IPC: G06F21/55 , G11C13/00 , H03K19/003
CPC classification number: G06F21/554 , G11C13/004 , G11C13/0069 , H03K19/003 , G06F2221/034
Abstract: Various implementations described herein refer to a method for tracking abnormal incidents while monitoring activity of logic circuitry. The method may include detecting a tamper event related to the abnormal incidents and storing an attack signature related to the tamper event. The attack signature may be stored in non-volatile memory (NVM), such as, e.g., correlated electron random access memory (CeRAM).
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