Abstract:
A method of making a device substrate article having a device modified substrate supported on a glass carrier substrate, including: treating at least a portion of the first surface of a device substrate, at least a portion of a first surface of a glass carrier, or a combination thereof, wherein the treating produces a surface having: silicon; oxygen; carbon; and fluorine amounts; and a metal to fluorine ratio as defined herein; contacting the treated surface with an untreated or like-treated counterpart device substrate or glass carrier substrate to form a laminate comprised of the device substrate bonded to the glass carrier substrate; modifying at least a portion of the non-bonded second surface of the device substrate of the laminate with at least one device surface modification treatment; and separating the device substrate having the device modified second surface from the glass carrier substrate.
Abstract:
Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract:
An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.
Abstract:
Methods for making electronic devices on thin sheets bonded to carriers. A surface modification layer and associated heat treatments, may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier during the electronic device processing. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, during the electronic device processing. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, during the electronic device processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract:
Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract:
A sub-assembly includes a glass substrate, a plurality of electronic devices, and a passivation layer. The glass substrate includes a first surface, a second surface opposite to the first surface, and a third surface extending between the first surface and the second surface. The glass substrate includes a plurality of laser damaged regions extending from the first surface to the second surface. The plurality of electronic devices are on the first surface of the glass substrate. The passivation layer is on the plurality of electronic devices and the third surface of the glass substrate. The passivation layer includes an opening to each laser damaged region of the plurality of laser damaged regions.
Abstract:
A method of depositing a copper film on a major surface of a glass sheet includes determining a desired range of a property of the copper film, correlating a thermal history of the glass sheet to the desired range of the property of the copper film, and depositing the copper film on the major surface of the glass sheet, wherein the property of the copper film deposited on the glass sheet is within the desired range. Correlating the thermal history of the glass sheet to the desired range of the property of the copper film can include heat treating glass sheet prior to depositing the copper film on the glass sheet.
Abstract:
Ceramic assembly can comprise a ceramic article comprising a thickness defined between a first major surface and a second major surface. The thickness can be about 100 micrometers or less. The ceramic assembly can comprise a polymer coating deposited over at least an outer peripheral portion of the first major surface of the ceramic article. The polymer coating can comprise a thickness of about 30 micrometers or less. An edge strength of the ceramic assembly can be greater than an edge strength of the ceramic article by about 50 MegaPascals or more. Methods of forming a ceramic assembly can comprise depositing a polymer coating on an outer peripheral portion of a first major surface of a ceramic article. Methods can further comprise curing the polymer coating.
Abstract:
A method of making polycrystalline silicon (p-Si), including: depositing amorphous silicon to produce an amorphous silicon super-mesa; dehydrogenating the amorphous silicon; patterning the super-mesa to produce a patterned substrate; depositing a capping oxide layer on the amorphous silicon on the patterned substrate; heating the capped, patterned substrate to the crystallization temperature of the a-Si; and flash lamp annealing the patterned substrate with a xenon lamp to produce p-Si having at least one super-mesa, and the super-mesa having supersized grains. Also disclosed are p-Si articles and devices incorporating the articles, and an apparatus for making the p-Si articles.
Abstract:
Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.