公开(公告)号：US20110235056A1

公开(公告)日：2011-09-29

申请号：US13072847

申请日：2011-03-28

申请人： Tatsuo Matsudo ,  Chishio Koshimizu

发明人： Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： G01B11/28

CPC分类号： G01B9/02021 ,  G01B9/02019 ,  G01B9/02028 ,  G01B9/02071 ,  G01B9/0209 ,  G01B11/06 ,  G01B11/0675

摘要： A wear rate measurement method includes thermally coupling a focus ring having a top surface and a bottom surface with a reference piece having a bottom surface facing a susceptor and a top surface facing the focus ring; measuring a first optical path length of a low-coherence light beam that travels forward and backward within the focus ring by irradiating the low-coherence light beam to the focus ring orthogonally to the top surface and the bottom surface thereof; measuring a second optical path length of a low-coherence light beam that travels forward and backward within the reference piece by irradiating the low-coherence light beam to the reference piece orthogonally to the top surface and the bottom surface thereof; and calculating a wear rate of the focus ring based on a ratio between the first optical path length and the second optical path length.

摘要翻译： 磨耗率测量方法包括将具有顶表面和底表面的聚焦环与具有面向基座的底表面和面向聚焦环的顶表面的参考件热耦合; 通过将低相干光束照射到与其顶表面和底面正交的聚焦环来测量在聚焦环内前后移动的低相干光束的第一光程长度; 通过将低相干光束垂直于其顶表面和底表面照射到参考件来测量在参考件内前后移动的低相干光束的第二光程长度; 以及基于所述第一光路长度和所述第二光路长度之间的比率来计算所述聚焦环的磨损率。

公开(公告)号：US20110094995A1

公开(公告)日：2011-04-28

申请号：US12913135

申请日：2010-10-27

申请人： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

发明人： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

IPC分类号： C23F1/08 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138

摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.

摘要翻译： 一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。 该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

公开(公告)号：US20100243620A1

公开(公告)日：2010-09-30

申请号：US12732583

申请日：2010-03-26

申请人： Jun Yamawaku ,  Chishio Koshimizu

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： B23K10/00

CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/2001

摘要： A plasma processing apparatus performs plasma processing on a processing target in a processing chamber. The apparatus includes: an object to be heated provided near a periphery of a mounting table disposed in the processing chamber; and a heating electrode disposed adjacent to the periphery of the mounting table, for heating the object to be heated. A first coil having a first path and a second coil having a second path are wired close to each other in the heating electrode along the periphery of the mounting table.

摘要翻译： 等离子体处理装置对处理室中的处理对象进行等离子体处理。 该装置包括：设置在处理室内的安装台的周边附近的被加热物; 以及与所述安装台的周边相邻设置的加热电极，用于加热待加热物体。 具有第一路径的第一线圈和具有第二路径的第二线圈沿着安装台的周边在加热电极中彼此靠近布线。

公开(公告)号：US07692916B2

公开(公告)日：2010-04-06

申请号：US11393916

申请日：2006-03-31

申请人： Naoki Matsumoto ,  Hideaki Tanaka ,  Hisashi Fujiwara ,  Chishio Koshimizu ,  Fumiaki Koiwa ,  Toshiyuki Kobayashi ,  Youichi Nakayama ,  Hiroshi Nakamura

发明人： Naoki Matsumoto ,  Hideaki Tanaka ,  Hisashi Fujiwara ,  Chishio Koshimizu ,  Fumiaki Koiwa ,  Toshiyuki Kobayashi ,  Youichi Nakayama ,  Hiroshi Nakamura

IPC分类号： H01L21/683

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32174

摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. A process gas supply unit is configured to supply a process gas into the process container. An RF power supply is configured to apply an RF power to the first electrode or second electrode to generate plasma of the process gas. A DC power supply is configured to apply a DC voltage to the first electrode or second electrode. A control section is configured to control the RF power supply and the DC power supply such that the DC power supply causes the DC voltage applied therefrom to reach a voltage set value, when or after the RF power supply starts applying the RF power.

摘要翻译： 等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。 第一电极和第二电极在处理容器内彼此相对设置。 处理气体供应单元构造成将处理气体供应到处理容器中。 RF电源被配置为向第一电极或第二电极施加RF功率以产生处理气体的等离子体。 DC电源被配置为向第一电极或第二电极施加DC电压。 控制部分被配置为当RF电源开始施加RF功率时或之后，控制RF电源和DC电源，使得DC电源使由其施加的DC电压达到电压设定值。

公开(公告)号：US20100012274A1

公开(公告)日：2010-01-21

申请号：US12504043

申请日：2009-07-16

申请人： Masaaki Miyagawa ,  Katsuhiko Ono ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Tatsuo Matsudo ,  Yasuhiro Hamada

发明人： Masaaki Miyagawa ,  Katsuhiko Ono ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Tatsuo Matsudo ,  Yasuhiro Hamada

IPC分类号： C23F1/08

CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/68735

摘要： A focus ring is placed on a substrate mounting table for mounting a target substrate thereon to surround the target substrate. The focus ring converges plasma on the target substrate when the target substrate is subjected to plasma processing. The focus ring is configured to create a temperature difference in its radial direction and over its full circumference during the plasma-processing of the target substrate. The focus ring also includes a radial outer region as a higher temperature region and a radial inner region as a lower temperature region. A groove is formed between the radial outer region and the radial inner region to extend over the full circumference of the focus ring.

摘要翻译： 将聚焦环放置在基板安装台上，用于在其上安装目标基板以围绕目标基板。 当目标衬底进行等离子体处理时，聚焦环会将等离子体收敛在目标衬底上。 聚焦环被配置成在靶基质的等离子体处理期间在其径向方向和其整个圆周上产生温度差。 聚焦环还包括作为较高温度区域的径向外部区域和作为较低温度区域的径向内部区域。 在径向外部区域和径向内部区域之间形成凹槽以在聚焦环的整个圆周上延伸。

公开(公告)号：US20100000970A1

公开(公告)日：2010-01-07

申请号：US12498703

申请日：2009-07-07

申请人： Chishio Koshimizu ,  Manabu Iwata ,  Tatsuo Matsudo

发明人： Chishio Koshimizu ,  Manabu Iwata ,  Tatsuo Matsudo

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32642 ,  H01J37/32522 ,  H01J37/32623

摘要： In a method of controlling the temperature of an in-chamber member used in a plasma processing apparatus that processes a target substrate with plasma, a plurality of power-feeding portions is provided in the in-chamber member and the in-chamber member is heated by supplying electric power thereto through the power-feeding portions. A resistance value or resistivity of the in-chamber member is measured and the electric power is controlled based on the temperature of the in-chamber member estimated from the resistance value or resistivity. The in-chamber member includes one or more annular members arranged around the target substrate. The in-chamber member is a member making contact with plasma within a chamber and existing near the target substrate.

摘要翻译： 在等离子体处理对象基板的等离子体处理装置中使用的室内部件的温度控制方法中，在室内部件中设置有多个供电部，加热室内部件 通过供电部向其供电。 测量室内构件的电阻值或电阻率，并且基于根据电阻值或电阻率估计的室内构件的温度来控制电功率。 腔内构件包括围绕靶基底布置的一个或多个环形构件。 腔内构件是与腔室内的等离子体接触并存在于靶基底附近的构件。

公开(公告)号：US20090223933A1

公开(公告)日：2009-09-10

申请号：US12465436

申请日：2009-05-13

申请人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

发明人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

IPC分类号： B44C1/22

CPC分类号： H01J37/32091 ,  H01J37/32183

摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.

摘要翻译： 用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极 ，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗 在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。

公开(公告)号：US07532322B2

公开(公告)日：2009-05-12

申请号：US11566340

申请日：2006-12-04

申请人： Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

发明人： Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

IPC分类号： G01J3/30

CPC分类号： G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

摘要： An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

摘要翻译： 用于测量等离子体电子密度的装置即使在低电子密度条件或高压条件下也能精确地测量等离子体中的电子密度。 该等离子体电子密度测量装置包括测量单元中的矢量网络分析仪，其测量复数反射系数并确定系数的虚部的频率特性。 读取复数反射系数的虚部为零交叉点的共振频率，并且通过测量控制单元基于谐振频率计算电子密度。

公开(公告)号：US20070236148A1

公开(公告)日：2007-10-11

申请号：US11756097

申请日：2007-05-31

申请人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

发明人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

IPC分类号： H01L21/3065

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

摘要翻译： 通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。 在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。 提供RF功率的RF电源通过匹配电路连接到第一或第二电极。 匹配电路自动执行相对于RF功率的输入阻抗匹配。 可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。 阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。 控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

公开(公告)号：US20070227664A1

公开(公告)日：2007-10-04

申请号：US11694083

申请日：2007-03-30

申请人： Naoki MATSUMOTO ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Noriaki Kodama ,  Chishio Koshimizu ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki MATSUMOTO ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Noriaki Kodama ,  Chishio Koshimizu ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32091

摘要： A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. An electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the generated plasma.

摘要翻译： 一种等离子体处理装置，其特征在于，包括：真空抽真空处理容器; 以处于通过绝缘构件或空间电浮动的状态设置在处理容器中的第一电极; 第二电极，布置在处理容器中以特定间隔面对并平行于第一电极，支撑待处理的基板; 处理气体供给单元，用于将期望的处理气体供给到被处理容器的第一电极，第二电极和侧壁包围的处理空间中; 以及第一射频电源单元，用于向所述第二电极施加第一射频功率以在所述处理空间中产生所述处理气体的等离子体。 第一电极和处理容器之间的静电电容被设定为使得所产生的等离子体获得期望的等离子体密度分布。