公开(公告)号：US07528644B2

公开(公告)日：2009-05-05

申请号：US11482448

申请日：2006-07-07

申请人： Jong-Hyun Choi ,  Dong-Il Seo

发明人： Jong-Hyun Choi ,  Dong-Il Seo

IPC分类号： H01L35/00

CPC分类号： G01K7/015 ,  G01K2219/00

摘要： A temperature detecting circuit is provided. The temperature detecting circuit includes a reference and detection voltage generator for generating a reference voltage corresponding to a first and a second reference current, and changing first to M-th (M being a natural number) detection currents based on first to M-th temperature detection codes to generate first to M-th detection voltages corresponding to the changed first to M-th detection currents and the second reference current; a temperature detection signal generator for comparing each of the first to M-th detection voltages with the reference voltage to generate first to M-th temperature detection signals; and a temperature detection controller for detecting an operation temperature of a semiconductor device while changing the first to M-th temperature detection codes in response to the first to M-th temperature detection signals from the temperature detection signal generator.

摘要翻译： 提供温度检测电路。 温度检测电路包括用于产生对应于第一和第二参考电流的参考电压的参考和检测电压发生器，并且基于第一至第M温度首先改变为第M（M为自然数）检测电流 检测码，用于产生对应于改变的第一至第M检测电流和第二参考电流的第一至第M检测电压; 温度检测信号发生器，用于将第一至第M检测电压中的每一个与参考电压进行比较，以产生第一至第M温度检测信号; 以及温度检测控制器，用于响应于来自温度检测信号发生器的第一至第M温度检测信号，在改变第一至第M温度检测代码的同时检测半导体器件的工作温度。

公开(公告)号：US20090046531A1

公开(公告)日：2009-02-19

申请号：US12111468

申请日：2008-04-29

申请人： Kwang-Sook Noh ,  Young-Hun Seo ,  Jong-Hyun Choi

发明人： Kwang-Sook Noh ,  Young-Hun Seo ,  Jong-Hyun Choi

IPC分类号： G11C7/04

CPC分类号： G11C11/402 ,  G11C11/406 ,  G11C11/40611 ,  G11C11/40626 ,  G11C2211/4061

摘要： An integrated circuit memory device includes a refresh control circuit that generates an internal memory refresh command signal having a period that is changed relative to a period of an external memory refresh command signal received by the memory device. This change in the period of the internal memory refresh command may be in response to detecting a change in temperature of the memory device. In particular, the refresh control circuit is configured so that the period of the internal memory refresh command signal is increased in response to detecting a reduction in temperature of the memory device.

摘要翻译： 集成电路存储器件包括刷新控制电路，该刷新控制电路产生具有相对于由存储器件接收的外部存储刷新命令信号的周期而改变的周期的内部存储器刷新命令信号。 内部存储器刷新命令的周期中的这种变化可以响应于检测到存储器件的温度变化。 特别地，刷新控制电路被配置为使得响应于检测到存储器件的温度降低而使内部存储器刷新命令信号的周期增加。

公开(公告)号：US07486576B2

公开(公告)日：2009-02-03

申请号：US11826367

申请日：2007-07-13

申请人： Jong-Hyun Choi ,  Dong-Il Seo ,  Kyu-Chan Lee ,  Young-Hun Seo

发明人： Jong-Hyun Choi ,  Dong-Il Seo ,  Kyu-Chan Lee ,  Young-Hun Seo

IPC分类号： G11C7/00

CPC分类号： G11C11/4078 ,  G11C7/24

摘要： A dynamic random access memory (DRAM) device, including a DRAM core having memory cells for storing data information, and a read protection unit, prevents data stored in the memory cells before power-off, from being read out at power-on.

摘要翻译： 包括具有用于存储数据信息的存储单元的DRAM内核的动态随机存取存储器（DRAM）装置以及在上电期间防止存储在存储单元中的数据在读取电源时被读出的读保护单元。

公开(公告)号：US20080111135A1

公开(公告)日：2008-05-15

申请号：US11935670

申请日：2007-11-06

申请人： Jong-Hyun Choi ,  Kyung-Jin Yoo

发明人： Jong-Hyun Choi ,  Kyung-Jin Yoo

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L27/1277 ,  H01L27/1255 ,  H01L27/1296 ,  H01L27/3244 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/0021

摘要： An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.

摘要翻译： 一种具有均匀电特性的有机发光二极管显示装置（OLED显示装置）及其制造方法。 OLED显示装置包括：基板; 设置在所述衬底上的半导体层，并且包括源区和漏区以及使用金属诱导横向结晶（MILC）形成的沟道区; 用于使所述半导体层电绝缘的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 用于使所述栅电极电绝缘的层间绝缘层; 包括电连接到半导体层的源极和漏极区域的源极和漏极的薄膜晶体管（TFT）; 用于电容器的第一电极，设置在与TFT间隔开并且使用金属诱导结晶（MIC）形成的基板的区域上; 所述栅极绝缘层用于使所述第一电容器电极电绝缘; 用于设置在栅极绝缘层上的电容器的第二电极; 设置在TFT和电容器上的平坦化层; 设置在所述平坦化层上的第一电极; 设置在所述第一电极上的像素限定层; 设置在所述第一电极和所述像素限定层上的有机层，并且至少包括发光层; 以及设置在有机层上的第二电极。

公开(公告)号：US07298655B2

公开(公告)日：2007-11-20

申请号：US11073765

申请日：2005-03-08

申请人： Jong-Hyun Choi ,  Young-Sun Min

发明人： Jong-Hyun Choi ,  Young-Sun Min

IPC分类号： G11C16/04

CPC分类号： G11C11/4091 ,  G11C11/4094 ,  G11C2207/005

摘要： A semiconductor memory includes a memory cell array, a sense amplifier, an isolation device interposed between the sense amplifier and a bit line of the memory cell array, and circuitry for transferring a charge contained in a memory cell of memory cell array to the bit line while the isolation device electrically isolates the bit line from the sense amplifier, and, after the charge is transferred to the bit line, for causing the isolation device to electrically connect the bit line to the sense amplifier.

摘要翻译： 半导体存储器包括存储单元阵列，读出放大器，插入在读出放大器和存储单元阵列的位线之间的隔离装置，以及用于将包含在存储单元阵列的存储单元中的电荷传送到位线 而隔离装置将位线与读出放大器电隔离，并且在电荷被传送到位线之后，用于使隔离装置将位线电连接到读出放大器。

公开(公告)号：US07259978B2

公开(公告)日：2007-08-21

申请号：US11221684

申请日：2005-09-08

申请人： Chul-Woo Park ,  Jung-Bae Lee ,  Young-Sun Min ,  Jong-Hyun Choi ,  Jong-Eon Lee

发明人： Chul-Woo Park ,  Jung-Bae Lee ,  Young-Sun Min ,  Jong-Hyun Choi ,  Jong-Eon Lee

IPC分类号： G11C5/06

CPC分类号： G11C5/063 ,  G11C7/18 ,  G11C8/14

摘要： A semiconductor memory device may include a memory cell array, a bit line sense amplifier, a sub word line driver, and an electrode. The memory cell array may include a sub memory cell array connected between sub word lines and bit line pairs and having memory cells which are selected in response to a signal transmitted to the sub word lines and column selecting signal lines. The bit line sense amplifier may be configures to sense and amplify data of the bit line pairs. The sub word line driver may be configured to combine signals transmitted from word selecting signal lines and signals transmitted from main word lines to select the sub word lines. Moreover, the memory cell array may be configured to transmit data between the bit line pairs and local data line pairs and to transmit data between the local data line pairs and global data line pairs. The electrode may be configured to cover the whole memory cell array and to apply a voltage needed for the memory cells. The local data line pairs may be arranged on a first layer above the electrode in the same direction as the sub word line. The column selecting signal lines and the global data line pairs may be arranged on a second layer above the electrode in the same direction as the bit line. The word selecting signal lines and the main word lines may be arranged on a third layer above the electrode in the same direction as the sub word line. Related methods of signal line arrangement are also discussed.

摘要翻译： 半导体存储器件可以包括存储单元阵列，位线读出放大器，子字线驱动器和电极。 存储单元阵列可以包括连接在子字线和位线对之间并具有响应于发送到子字线和列选择信号线的信号而被选择的存储器单元的子存储单元阵列。 位线读出放大器可以被配置为感测和放大位线对的数据。 子字线驱动器可以被配置为组合从字选择信号线发送的信号和从主字线发送的信号，以选择子字线。 此外，存储单元阵列可以被配置为在位线对和本地数据线对之间传输数据，并且在本地数据线对和全局数据线对之间传送数据。 电极可以被配置为覆盖整个存储单元阵列并施加存储单元所需的电压。 局部数据线对可以以与子字线相同的方向布置在电极上方的第一层上。 列选择信号线和全局数据线对可以以与位线相同的方向布置在电极上方的第二层上。 字选择信号线和主字线可以沿与子字线相同的方向布置在电极上方的第三层上。 还讨论了信号线布置的相关方法。

公开(公告)号：US07242602B2

公开(公告)日：2007-07-10

申请号：US11002034

申请日：2004-12-02

申请人： Chang-Ho Lee ,  Jong-Hyun Choi

发明人： Chang-Ho Lee ,  Jong-Hyun Choi

IPC分类号： G11C5/08 ,  G11C5/06 ,  G11C11/12

CPC分类号： G11C11/4097 ,  G11C5/14 ,  G11C7/02 ,  Y10S257/907

摘要： A semiconductor memory device includes spaced apart twisted bit line pairs, a respective one of which includes a spaced apart twisted area. A conductive line overlaps the respective twisted areas of the spaced apart twisted line pairs. The conductive line can extend parallel to the memory device word lines, and can provide a power supply ground and/or signal line.

摘要翻译： 半导体存储器件包括间隔开的扭曲位线对，其相应的一个包括间隔开的扭曲区域。 导线与间隔开的扭绞线对的相应扭曲区域重叠。 导线可以平行于存储器件字线延伸，并且可以提供电源接地和/或信号线。

公开(公告)号：US20070153590A1

公开(公告)日：2007-07-05

申请号：US11567826

申请日：2006-12-07

申请人： Young-Hun Seo ,  Dong-Il Seo ,  Kyu-Chan Lee ,  Jong-Hyun Choi

发明人： Young-Hun Seo ,  Dong-Il Seo ,  Kyu-Chan Lee ,  Jong-Hyun Choi

IPC分类号： G11C5/14

CPC分类号： G11C5/147

摘要： An internal reference voltage generating circuit that reduces a standby current and the number of pins of a semiconductor memory device, in which a reference voltage is provided to an input buffer that receives a signal through an input to which an on die transmitor resistor is connected, includes, a voltage dividing circuit outputting the reference voltage by a power voltage; a pull down driver connected to an end of the voltage dividing circuit; and a calibration control circuit comparing a voltage level of the input and a voltage level of an end of the voltage dividing circuits and controlling the on resistor value of the pull down driver according to a result of the comparison. The internal reference voltage generating circuit is operated white the memory controller inputs a signal into a mode register set (MRS) to enable the internal reference voltage generating circuit and the output signal of the MRS is activated.

摘要翻译： 一种内部参考电压发生电路，其将待机电流和半导体存储器件的引脚数量减少，其中参考电压被提供给通过连接有管芯发送器电阻器的输入接收信号的输入缓冲器， 包括：通过电源电压输出所述参考电压的分压电路; 连接到分压电路的一端的下拉驱动器; 以及校准控制电路，其比较输入的电压电平和分压电路的端部的电压电平，并根据比较的结果控制下拉驱动器的导通电阻值。 内部参考电压产生电路白色运行，存储器控制器将信号输入到模式寄存器组（MRS）中以使能内部参考电压产生电路，并且MRS的输出信号被激活。

公开(公告)号：US20060176079A1

公开(公告)日：2006-08-10

申请号：US11348582

申请日：2006-02-06

申请人： Jong-Hyun Choi ,  Young-Hun Seo

发明人： Jong-Hyun Choi ,  Young-Hun Seo

IPC分类号： H03K19/0175

CPC分类号： G11C7/1051 ,  G11C7/1057 ,  G11C7/1078 ,  G11C7/1084 ,  H03K19/0005

摘要： An input/output circuit for a semiconductor memory device, including a data output circuit configured to buffer output data in the semiconductor memory device in response to an input/output enable signal to output the buffered output data to an input/output signal line, a data input circuit configured to receive input data from the input/output signal line and buffer the input data to transfer the buffered input data to the semiconductor memory device, and a load controller configured to control a load on the input/output signal line in response to the input/output enable signal.

摘要翻译： 一种用于半导体存储器件的输入/输出电路，包括数据输出电路，配置为响应于输入/输出使能信号缓冲半导体存储器件中的输出数据，以将缓冲的输出数据输出到输入/输出信号线， 数据输入电路，被配置为从输入/输出信号线接收输入数据并缓冲输入数据以将缓冲的输入数据传送到半导体存储器件;以及负载控制器，被配置为响应于控制输入/输出信号线上的负载 到输入/输出使能信号。

公开(公告)号：US06992943B2

公开(公告)日：2006-01-31

申请号：US10959804

申请日：2004-10-06

申请人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

发明人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

IPC分类号： G11C7/00

CPC分类号： G11C11/40622 ,  G11C7/1018 ,  G11C11/406 ,  G11C11/4087

摘要： Systems and methods for performing a PASR (partial array self-refresh) operation wherein a refresh operation for recharging stored data is performed on a portion (e.g., ½ ¼, ⅛, or 1/16) of one or more selected memory banks comprising a cell array in a semiconductor memory device. In one aspect, a PASR operation is performed by (1) controlling the generation of row addresses by a row address counter during a self-refresh operation and (2) controlling a self-refresh cycle generating circuit to adjust the self-refresh cycle output therefrom. The self-refresh cycle is adjusted in a manner that provides a reduction in the current dissipation during the PASR operation. In another aspect, a PASR operation is performed by controlling one or more row addresses corresponding to a partial cell array during a self-refresh operation, whereby a reduction in a self-refresh current dissipation is achieved by blocking the activation of a non-used block of a memory bank.