利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

290 条记录 (耗时 0.048 秒)

    Paper and paper articles and method for making same
    31.
    发明申请
    Paper and paper articles and method for making same 审中-公开
    纸和纸制品及其制作方法

    公开(公告)号：US20060231227A1

    公开(公告)日：2006-10-19

    申请号：US10437856

    申请日：2003-05-14

    申请人： Richard Williams ,  Peter Froass

    发明人： Richard Williams ,  Peter Froass

    IPC分类号： D21H17/00 ,  B32B27/00

    CPC分类号： D21H21/54 ,  Y10T428/27

    摘要： This invention relates to a paper material containing cellulosic fibers and from about 0.1 to about 6.0 wt % by weight dry basis expandable microspheres and a density of at least about 6.0 lb/3000 ft2/mil and articles formed there from such as file folders.

    摘要翻译： 本发明涉及含有纤维素纤维的纸材料和约0.1至约6.0重量％的干基膨胀微球体和至少约6.0lb / 3000ft 2密度的密度和形成的制品 从这样的文件夹。

    Co-linear tensioner and methods of installing and removing same
    32.
    发明申请
    Co-linear tensioner and methods of installing and removing same 审中-公开
    共线张紧器及其安装和拆卸方法

    公开(公告)号：US20060180314A1

    公开(公告)日：2006-08-17

    申请号：US11060660

    申请日：2005-02-17

    申请人： Richard Williams

    发明人： Richard Williams

    IPC分类号： E21B33/038

    CPC分类号： E21B19/006

    摘要： The invention is directed to a tensioner for providing linear and angular movement of a drilling or production facility relative to a conduit or riser secured to the tensioner and to the wellhead in offshore operations. The tensioner compensates for vessel motion induced by wave action and heave and maintains a variable tension to the riser string alleviating the potential for compression and thus buckling or failure of the riser string. The tensioner of the present invention preferably includes at least one top load plate that facilitates easy and quick installation and removal of the tensioner from the rig floor of the vessel or platform. The tensioner also facilitates the placement of at least one piece of equipment disposed within the area formed by the tensioning cylinders. The tensioner may also include one or more pieces of equipment, e.g., a rotary table, integrally formed with the tensioner to further increase the ease and speed of installation and removal of the tensioner from the rig floor. Methods for installing and removing tensioners from the rig floor are also disclosed.

    摘要翻译： 本发明涉及一种张紧器，用于相对于在海上操作中固定到张紧器和井口的导管或立管提供钻孔或生产设备的线性和角运动。 张紧器补偿由波浪作用引起的船只运动并起伏，并且将提升管柱的可变张力保持在可调节的状态，减轻了压缩的可能性，从而降低了提升管柱的翘曲或失效。 本发明的张紧器优选地包括至少一个顶部负载板，其有助于从容器或平台的钻台底部容易且快速地安装和移除张紧器。 张紧器还有助于放置设置在由张紧缸形成的区域内的至少一件设备。 张紧器还可以包括与张紧器一体形成的一个或多个设备，例如旋转台，以进一步增加张紧器从钻台上的安装和移除的容易性和速度。 还公开了用于从钻台上安装和拆卸张紧器的方法。

    Trench semiconductor device having gate oxide layer with mulitiple thicknesses and processes of fabricating the same
    40.
    发明申请
    Trench semiconductor device having gate oxide layer with mulitiple thicknesses and processes of fabricating the same 有权
    沟槽半导体器件具有多个厚度的栅极氧化物层及其制造方法

    公开(公告)号：US20050215013A1

    公开(公告)日：2005-09-29

    申请号：US11137151

    申请日：2005-05-25

    申请人： Richard Williams ,  Wayne Grabowski

    发明人： Richard Williams ,  Wayne Grabowski

    IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L21/8242 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/7828 ,  H01L29/8083

    摘要： The a trench semiconductor device such as a power MOSFET the high electric field at the corner of the trench is diminished by increasing the thickness of the gate oxide layer at the bottom of the trench. Several processes for manufacturing such devices are described. In one group of processes a directional deposition of silicon oxide is performed after the trench has been etched, yielding a thick oxide layer at the bottom of the trench. Any oxide which deposits on the walls of the trench is removed before a thin gate oxide layer is grown on the walls. The trench is then filled with polysilicon in or more stages. In a variation of the process a small amount of photoresist is deposited on the oxide at the bottom of the trench before the walls of the trench are etched. Alternatively, polysilicon can be deposited in the trench and etched back until only a portion remains at the bottom of the trench. The polysilicon is then oxidized and the trench is refilled with polysilicon. The processes can be combined, with a directional deposition of oxide being followed by a filling and oxidation of polysilicon. A process of forming a “keyhole” shaped gate electrode includes depositing polysilicon at the bottom of the trench, oxidizing the top surface of the polysilicon, etching the oxidized polysilicon, and filling the trench with polysilicon.

    摘要翻译： 诸如功率MOSFET的沟槽半导体器件通过增加沟槽底部的栅极氧化物层的厚度来减小沟槽拐角处的高电场。 描述了用于制造这种设备的几个过程。 在一组工艺中，在蚀刻沟槽之后进行氧化硅的定向沉积，在沟槽的底部产生厚的氧化物层。 沉积在沟槽壁上的任何氧化物在薄的栅极氧化物层生长在壁上之前被去除。 然后在多层或多层中填充沟槽。 在该方法的变化中，在蚀刻沟槽的壁之前，在沟槽底部的氧化物上沉积少量的光致抗蚀剂。 或者，多晶硅可以沉积在沟槽中并被回蚀，直到只有一部分保留在沟槽的底部。 然后将多晶硅氧化，并用多晶硅再填充沟槽。 该方法可以组合，随着氧化物的定向沉积，随后是多晶硅的填充和氧化。 形成“键孔”形栅电极的工艺包括在沟槽的底部沉积多晶硅，氧化多晶硅的顶表面，蚀刻氧化的多晶硅，并用多晶硅填充沟槽。