公开(公告)号：US20250063848A1

公开(公告)日：2025-02-20

申请号：US18723069

申请日：2022-12-23

Applicant: First Solar, Inc.

Inventor： Tursun Ablekim ,  Sachit Grover ,  James Hack ,  Elline Hettiaratchy ,  Taylor Hill ,  Sergei Kniajanski ,  Wyatt Metzger ,  Nicholas Valdes ,  Gang Xiong

IPC: H01L31/0368 ,  H01L31/0296 ,  H01L31/18

Abstract: Provided are photovoltaic devices with polycrystalline type II-VI semiconductor absorber materials including n-type absorber compositions and having p-type hole contact layers are described herein. Methods of treating semiconductor absorber layers and forming hole contact layers are described.

公开(公告)号：US20250029792A1

公开(公告)日：2025-01-23

申请号：US18906018

申请日：2024-10-03

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C14/58 ,  H01G9/20 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/16 ,  H10K85/30

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US12112897B2

公开(公告)日：2024-10-08

申请号：US17801093

申请日：2021-02-19

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C14/58 ,  H01G9/20 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/16 ,  H10K85/30

CPC classification number: H01G9/0036 ,  C23C14/0694 ,  C23C14/228 ,  C23C14/50 ,  C23C14/5806 ,  H01G9/2009 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/164 ,  H10K85/30

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US20240015992A1

公开(公告)日：2024-01-11

申请号：US18039820

申请日：2021-12-01

Applicant: First Solar, Inc.

Inventor： Duyen Cao ,  Markus Gloeckler ,  Sachit Grover ,  James Hack ,  Chungho Lee ,  Dingyuan Lu ,  Aravamuthan Varadarajan ,  Gang Xiong ,  Zhibo Zhao

IPC: H10K30/10 ,  H10K71/12

CPC classification number: H10K30/10 ,  H10K71/12

Abstract: Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD, TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.

公开(公告)号：US11791427B2

公开(公告)日：2023-10-17

申请号：US17509710

申请日：2021-10-25

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20210376177A1

公开(公告)日：2021-12-02

申请号：US17287988

申请日：2019-10-23

Applicant: First Solar, Inc.

Inventor： Le Chen ,  Sachit Grover ,  Jason Kephart ,  Sergei Kniajanski ,  Chungho Lee ,  Xiaoping Li ,  Feng Liao ,  Dingyuan Lu ,  Rajni Mallick ,  Wenming Wang ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/073 ,  H01L31/0296

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

公开(公告)号：US20200066928A1

公开(公告)日：2020-02-27

申请号：US16665516

申请日：2019-10-28

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/073 ,  H01L31/0749

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

公开(公告)号：US09450115B2

公开(公告)日：2016-09-20

申请号：US14212584

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Pawel Mrozek ,  Gang Xiong ,  San Yu

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/186 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.

Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法，该方法包括在半导体吸收层上沉积或形成背接触层之前从半导体吸收体层去除表面污染物的步骤，至少使用至少去除表面污染物 干蚀刻工艺和湿蚀刻工艺之一。

公开(公告)号：US20160265100A1

公开(公告)日：2016-09-15

申请号：US15163321

申请日：2016-05-24

Applicant: First Solar, Inc.

Inventor： Feng Liao ,  Rick C. Powell ,  Gang Xiong

IPC: C23C14/24 ,  B65G53/16

CPC classification number: C23C14/24 ,  B65G53/16 ,  C23C14/228

Abstract: An improved feeder system and method for a vapor transport deposition system that includes a carrier gas bypass flow line to allow for continuous carrier gas flow to a vaporizer unit when a vibratory unit which supplies powdered material and carrier gas to the vaporizer unit is out of service. A process gas flow line to the vibratory unit may be included when the powdered material contains a powdered dopant in the material mix.

公开(公告)号：US09406829B2

公开(公告)日：2016-08-02

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。