公开(公告)号：US20170054052A1

公开(公告)日：2017-02-23

申请号：US15342533

申请日：2016-11-03

Applicant: FIRST SOLAR, INC

Inventor： Markus Gloeckler ,  Akhlesh Gupta ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/1864 ,  H01L21/02474 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02672 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0296 ,  H01L31/073

Abstract: A method for producing, apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract translation: 一种制造用于制造光伏器件的方法，包括具有卤化物热处理表面的半导体层，其增加至少一个半导体层内的晶粒生长并改善半导体层之间的界面。 卤化物热处理包括在邻近或部分半导体层的表面上施加和加热卤化物的多个涂层。

公开(公告)号：US20140261687A1

公开(公告)日：2014-09-18

申请号：US14209589

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Dan Damjanovic ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/0296 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

Abstract translation: 描述了完成的形成它的光伏器件和方法，其中通过存在牺牲助熔层来减轻窗口层进入吸收层的磁化。

公开(公告)号：US20140216550A1

公开(公告)日：2014-08-07

申请号：US14171020

申请日：2014-02-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

Abstract translation: 光电器件包括衬底结构和p型半导体吸收层，该衬底结构包括CdSSe层。 光电器件可以替代地包括CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSSe层。 该方法包括在CdSSe层上形成p型吸收层。

公开(公告)号：US20140186975A1

公开(公告)日：2014-07-03

申请号：US14133946

申请日：2013-12-19

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Douglas Dauson ,  David Hwang ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/66 ,  H01L31/0224 ,  G01B11/06

CPC classification number: H01L22/12 ,  G01B11/0625 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/1884 ,  H02S50/00 ,  Y02E10/50

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract translation: 提供了一种用于光电装置的多层透明导电氧化物层的光电性质和层的厚度实时的在线计算的方法和系统。 该方法和系统包括在沉积期间对堆叠的每个层进行测量。 然后测量用于实时地计算层的光电特性和厚度。

公开(公告)号：US20130196466A1

公开(公告)日：2013-08-01

申请号：US13754613

申请日：2013-01-30

Applicant: FIRST SOLAR, INC

Inventor： Zhibo Zhao ,  Rui Shao ,  Benyamin Buller ,  Dale Roberts

IPC: H01L31/18

CPC classification number: H01L31/1884 ,  C23C14/02 ,  C23C14/024 ,  C23C14/086 ,  C23C14/568 ,  Y02E10/50

Abstract: A method and apparatus for manufacturing a multi-layered structure includes forming a crystalline layer of a material by depositing an amorphous layer of the material on a heated substrate.

Abstract translation: 用于制造多层结构的方法和装置包括通过在加热的衬底上沉积材料的非晶层来形成材料的结晶层。

公开(公告)号：US20250029792A1

公开(公告)日：2025-01-23

申请号：US18906018

申请日：2024-10-03

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C14/58 ,  H01G9/20 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/16 ,  H10K85/30

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US12112897B2

公开(公告)日：2024-10-08

申请号：US17801093

申请日：2021-02-19

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C14/58 ,  H01G9/20 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/16 ,  H10K85/30

CPC classification number: H01G9/0036 ,  C23C14/0694 ,  C23C14/228 ,  C23C14/50 ,  C23C14/5806 ,  H01G9/2009 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/164 ,  H10K85/30

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US20240237371A9

公开(公告)日：2024-07-11

申请号：US18277157

申请日：2022-02-11

Applicant: First Solar, Inc. ,  Alliance for Sustainable Energy, LLC

Inventor： Joseph Jonathan Berry ,  Le Chen ,  Axel Finn Palmstrom ,  Tze-Bin Song ,  Vera Steinmann ,  Natasha Teran ,  Aravamuthan Varadarajan ,  Xueping Yi ,  Zhibo Zhao ,  Kai Zhu

IPC: H10K30/89 ,  H10K30/10 ,  H10K30/50 ,  H10K71/60

CPC classification number: H10K30/89 ,  H10K30/10 ,  H10K30/50 ,  H10K71/60

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

公开(公告)号：US20240030367A1

公开(公告)日：2024-01-25

申请号：US18372567

申请日：2023-09-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US20240015992A1

公开(公告)日：2024-01-11

申请号：US18039820

申请日：2021-12-01

Applicant: First Solar, Inc.

Inventor： Duyen Cao ,  Markus Gloeckler ,  Sachit Grover ,  James Hack ,  Chungho Lee ,  Dingyuan Lu ,  Aravamuthan Varadarajan ,  Gang Xiong ,  Zhibo Zhao

IPC: H10K30/10 ,  H10K71/12

CPC classification number: H10K30/10 ,  H10K71/12

Abstract: Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD, TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.