摘要:
An apparatus for continuous casting of molten steel comprises a continuous casting mold; an electromagnetic stirring coil, which rotates and fluidizes molten steel inside the mold and which is installed outside the mold; and a screen of ferromagnetic substance positioned between the mold and the electromagnetic stirring coil at a height including a level of meniscus. A method for continuous casting of molten steel comprises the steps of pouring molten steel into a continuous casting mold; applying an electromagnetic force to the molten steel in the mold by means of an electromagnetic coil installed outside the continuous casting mold; and shielding said electromagnetic force by means of a screen of ferromagnetic substance installed between the mold and electromagnetic coil at a height including a level of meniscus.
摘要:
This invention relates to a method for preparing glassy fibers having protuberances studded on the surface of the fiber, characterized in that each protuberance comprises an unmelted component of the starting materials and is formed on the surface of the fiber by fiberizing the partially unmelted starting materials by a spinner or blowing technique.
摘要:
This invention pertains to a method of making inorganic vitreous fibers having small protrusions, such that the fiber produces a high strength reinforced molded product. The fibers are formed by introducing high melting constituents such as glass fiber, rock wool, ceramic fiber, silica particles, alumina particles, zirconia particles or mullite particles to molten inorganic material such that the constituents when flung from a ratary device are incorporated into the molten inorganic material.
摘要:
A decorative molding film includes a base film provided with a protective layer, a coloring layer containing a polyolefin based hot melt adhesive and pigment, and an adhesive layer containing a polyolefin based hot melt adhesive, stacked in that order on one side of the base film.
摘要:
A nuclear reactor vessel structure includes an inner peripheral tube-shaped steel plate, an outer peripheral tube-shaped steel plate, and an intermediate tube-shaped steel plate disposed between the inner and outer peripheral tube-shaped steel plates, and is configured to support a nuclear reactor vessel on the inner peripheral side of a tube-shaped structure with concrete placed between the steel plates. The nuclear reactor vessel structure includes a support having a tube-shaped plate disposed on the inner peripheral side of the intermediate tube-shaped steel plate, and an annular plate which protrudes to the inner peripheral side of the tube-shaped plate and to which a connection section is affixed. The support is affixed to the concrete, which is placed between the inner peripheral and the intermediate tube-shaped steel plates, by first bar members, and the support is also affixed to the inner peripheral tube-shaped steel plate by second bar members.
摘要:
When a detection signal obtained from the cell of a gas sensor (S15) has reached a start determination value (specifically, when the output voltage of the cell is higher than 600 mV (S16: YES) or lower than 300 mV (S17: YES)), a pulse voltage is applied to the cell (S18), and a start-time internal resistance is obtained on the basis of the detection signal having changed as a result of application of the pulse voltage (S20). The start-time internal resistance is compared with a deterioration determination value set in advance (S21). A target resistance of the cell used in temperature control (energization control) for the heater is corrected in accordance with the result of the comparison (S28). Thus, the temperature of the cell can be stably maintained constant irrespective of deterioration of the cell.
摘要:
In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property.
摘要:
Whether one of a user's feet has touched the ground is detected on the basis of detection values from an acceleration sensor. In a single walking cycle, a period in which the user is standing on a first (the second) foot from a time when a detecting member detects that the first (second) foot has touched the ground to a time when the detecting member detects that a second (first) foot has touched the ground is defined as a first (second) stance period. A representative value for the detection values for each of the first and the second stance period is calculated on the basis of the detection values detected by the acceleration sensor. Whether or not a walking is an ascending (descending) walking is determined on the basis of a comparison result between the calculated representative values for the first and the second stance period.
摘要:
A semiconductor device including a metal frame having a penetrating opening; a semiconductor chip provided in the opening; an insulating layer provided on the upper surface of the metal frame such that the insulating layer covers the upper surface, which is the circuit-formed surface of the semiconductor chip; an interconnect layer provided only on the upper-surface side of the metal frame with intervention of the insulating material and electrically connected to a circuit of the semiconductor chip; a via conductor provided on the upper surface of said semiconductor chip to electrically connect the circuit of the semiconductor chip and the interconnect layer; and a resin layer provided on the lower surface of the metal frame.
摘要:
A gait change determination device includes a main body unit, an accelerometer that detects an acceleration of the main body unit, and a control unit, and determines a change in the gait of a user that wears the main body unit on a predetermined area. The control unit specifies a trajectory of a predetermined area on which the main body unit is worn during walking based on accelerations detected by the accelerometer, calculates the temporal change amount of the specified trajectory, and determines the degree of change, which is the degree of the temporal change, based on the calculated temporal change. The degree of change in the gait can be more accurately determined.