公开(公告)号：US20080017099A1

公开(公告)日：2008-01-24

申请号：US11782052

申请日：2007-07-24

申请人： Masaaki Onomura ,  Yoshiyuki Harada

发明人： Masaaki Onomura ,  Yoshiyuki Harada

IPC分类号： H01L21/205 ,  C30B23/00

CPC分类号： C30B29/40 ,  C23C16/45572 ,  C23C16/45576 ,  C23C16/4584 ,  C30B25/165 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T117/10 ,  Y10T117/1016

摘要： A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the substrate is located on a side nearer to the rotation axis than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.

摘要翻译： 一种用于形成半导体膜的晶体生长方法，所述方法包括：在围绕旋转轴线旋转一个或多个基板的同时，使基板平行于基板的旋转轴侧的原料气体和载气从基板平行。 与通过原料气体的热分解形成的半导体膜的生长速度最大的位置相比，基板的中心位于比旋转轴更靠近的一侧。

公开(公告)号：US20070086497A1

公开(公告)日：2007-04-19

申请号：US11374072

申请日：2006-03-14

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/0425 ,  H01S5/02461 ,  H01S5/22 ,  H01S5/32341

摘要： A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode ; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

摘要翻译： 半导体激光器件包括：有源层; 第一导电类型的包覆层; 绝缘膜; 第一电极; 以及设置在第一电极上的焊盘电极。 包覆层设置在有源层上方，并且具有构成条纹波导的脊部和与脊部的两侧相邻的非脊部。 绝缘膜覆盖脊部的侧面和非脊部的上表面。 第一电极具有设置在非脊部之上的间隙部分。 焊盘电极设置在第一电极上。

公开(公告)号：US20070009000A1

公开(公告)日：2007-01-11

申请号：US11484006

申请日：2006-07-11

申请人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

发明人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054

摘要： A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.

摘要翻译： 一种半导体激光装置，包括：第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。

公开(公告)号：US5274649A

公开(公告)日：1993-12-28

申请号：US795831

申请日：1991-11-21

申请人： Yuzo Hirayama ,  Masaaki Onomura

发明人： Yuzo Hirayama ,  Masaaki Onomura

IPC分类号： H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/10 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/06258 ,  H01S5/10 ,  H01S5/34313 ,  H01S5/06213 ,  H01S5/06255 ,  H01S5/106 ,  H01S5/12 ,  H01S5/3428 ,  H01S5/34306

摘要： An electronically wavelength-tunable distributed-feedback quantum well semiconductor laser includes a semiconductor substrate, an optical waveguide layer on the substrate, and a multiple quantum well structure section arranged on the optical waveguide layer and including first and second semiconductor layers which are alternately laminated on each other. The multiple quantum well structure section change regionally in the lamination number of the first and second layers, thereby defining a series of active regions with different gain versus carrier characteristics. A plurality of electrodes are formed on the upper portion of the multiple quantum well structure section positionally in association with the series of the activated regions.

公开(公告)号：US07602829B2

公开(公告)日：2009-10-13

申请号：US11545756

申请日：2006-10-11

申请人： Takayuki Matsuyama ,  Masaaki Onomura

发明人： Takayuki Matsuyama ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/02212 ,  H01S5/02224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/0422 ,  H01S5/34333 ,  H01S2301/18

摘要： According to an aspect of the embodiment, there is provided a semiconductor light emitting device including: a gallium nitride substrate; a multilayer film of nitride semiconductors provided on the gallium nitride substrate; a first film including a first silicon nitride layer; and a second film including a second silicon nitride layer and a laminated film provided on the second silicon nitride layer. The gallium nitride substrate and the multilayer film have a laser light emitting facet and a laser light reflecting facet. The first silicon nitride layer is provided on the laser light emitting facet. The multilayer film includes a light emitting layer, and the multilayer film has a laser light emitting facet and a laser light reflecting facet. The second silicon nitride layer is provided on the laser light reflecting facet, and the laminated film includes oxide layer and silicon nitride layer which are alternately laminated.

摘要翻译： 根据实施例的一个方面，提供了一种半导体发光器件，包括：氮化镓衬底; 设置在氮化镓衬底上的氮化物半导体的多层膜; 包括第一氮化硅层的第一膜; 以及包括第二氮化硅层和设置在第二氮化硅层上的层叠膜的第二膜。 氮化镓衬底和多层膜具有激光发射面和激光反射面。 第一氮化硅层设置在激光发射面上。 多层膜包括发光层，多层膜具有激光发射面和激光反射面。 第二氮化硅层设置在激光反射面上，层叠膜包括交替层叠的氧化物层和氮化硅层。

公开(公告)号：US07369592B2

公开(公告)日：2008-05-06

申请号：US11374072

申请日：2006-03-14

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01S3/04

CPC分类号： H01S5/0425 ,  H01S5/02461 ,  H01S5/22 ,  H01S5/32341

摘要： A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

摘要翻译： 半导体激光器件包括：有源层; 第一导电类型的覆层; 绝缘膜; 第一电极; 以及设置在第一电极上的焊盘电极。 包覆层设置在有源层上方，并且具有构成条纹波导的脊部和与脊部的两侧相邻的非脊部。 绝缘膜覆盖脊部的侧面和非脊部的上表面。 第一电极具有设置在非脊部之上的间隙部分。 焊盘电极设置在第一电极上。

公开(公告)号：US20070200143A1

公开(公告)日：2007-08-30

申请号：US11507598

申请日：2006-08-22

申请人： Wataru Saito ,  Masaaki Onomura

发明人： Wataru Saito ,  Masaaki Onomura

IPC分类号： H01L31/00

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404

摘要： A nitride semiconductor device comprises: a laminated body; a first and second main electrode provided in a second and third region, respectively, adjacent to either end of the first region on the major surface of the laminated body; and a third main electrode. The laminated body includes a first semiconductor layer of a nitride semiconductor and a second semiconductor layer of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer, the second semiconductor layer being provided on the first semiconductor layer. The third main electrode is provided on the major surface of the laminated body and opposite to the control electrode across the second main electrode.

摘要翻译： 氮化物半导体器件包括：层叠体; 第一和第二主电极分别设置在第二和第三区域中，邻近层压体的主表面上的第一区域的任一端; 和第三主电极。 层叠体包括氮化物半导体的第一半导体层和具有比第一半导体层更宽的带隙的非掺杂或n型氮化物半导体的第二半导体层，第二半导体层设置在第一半导体层上。 第三主电极设置在层叠体的主表面上，并与第二主电极相对的控制电极相对。

公开(公告)号：US20070051977A1

公开(公告)日：2007-03-08

申请号：US11507493

申请日：2006-08-22

申请人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

发明人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

IPC分类号： H01L31/00 ,  H01L21/336

CPC分类号： H01L29/7787 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316

摘要： A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.

摘要翻译： 一种氮化物半导体器件包括：衬底本体，包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。 第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。 第一主电极设置在导电部分的上方，第二主电极设置在高电阻部分的上方。

公开(公告)号：US20070023773A1

公开(公告)日：2007-02-01

申请号：US11542224

申请日：2006-10-04

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01L33/00

CPC分类号： H01L33/02

摘要： A first cladding layer of a first conductivity type formed above a crystal substrate, an active layer formed above the first cladding layer, a diffusion prevention layer formed on the active layer and preventing an impurity from diffusing into the active layer, an overflow prevention layer of a second conductivity type, the second conductivity type being different from the first conductivity type, which is formed on the diffusion prevention layer and prevents an overflow of carriers implanted into the active layer, and a second cladding layer of the second conductivity type formed above the overflow prevention layer are provided.

摘要翻译： 形成在晶体基板上方的第一导电类型的第一包层，形成在第一包层上方的有源层，形成在有源层上的防止扩散层并防止杂质扩散到有源层中的防溢出层， 第二导电类型，第二导电类型不同于形成在扩散防止层上的第一导电类型，并且防止注入有源层的载流子溢出，以及形成在第二导电类型上方的第二导电类型的第二包层 提供溢流防止层。

公开(公告)号：US20050218415A1

公开(公告)日：2005-10-06

申请号：US11061735

申请日：2005-02-22

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01S5/22 ,  H01L29/22 ,  H01S5/34

CPC分类号： H01L33/02

摘要： A first cladding layer of a first conductivity type formed above a crystal substrate, an active layer formed above the first cladding layer, a diffusion prevention layer formed on the active layer and preventing an impurity from diffusing into the active layer, an overflow prevention layer of a second conductivity type, the second conductivity type being different from the first conductivity type, which is formed on the diffusion prevention layer and prevents an overflow of carriers implanted into the active layer, and a second cladding layer of the second conductivity type formed above the overflow prevention layer are provided.

摘要翻译： 形成在晶体基板上方的第一导电类型的第一包层，形成在第一包层上方的有源层，形成在有源层上的防止扩散层并防止杂质扩散到有源层中的防溢出层， 第二导电类型，第二导电类型不同于形成在扩散防止层上的第一导电类型，并且防止注入有源层的载流子溢出，以及形成在第二导电类型上方的第二导电类型的第二包层 提供溢流防止层。