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    TITANIUM-BASED HIGH-K DIELECTRIC FILMS
    32.
    发明申请
    TITANIUM-BASED HIGH-K DIELECTRIC FILMS 有权
    基于钛的高K电介质膜

    公开(公告)号：US20110203085A1

    公开(公告)日：2011-08-25

    申请号：US13100538

    申请日：2011-05-04

    申请人： Hanhong Chen ,  Pragati Kumar ,  Sunil Shanker ,  Edward Haywood ,  Sandra Malhotra ,  Imran Hashim ,  Nobi Fuchigami ,  Prashant Phatak ,  Monica Mathur

    发明人： Hanhong Chen ,  Pragati Kumar ,  Sunil Shanker ,  Edward Haywood ,  Sandra Malhotra ,  Imran Hashim ,  Nobi Fuchigami ,  Prashant Phatak ,  Monica Mathur

    IPC分类号： H01G7/00

    CPC分类号： H01G4/1218 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/3142 ,  H01L28/40

    摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.

    摘要翻译： 本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。 使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于含酰胺前体的TiO 2电介质。 在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。 进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。 该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

    Titanium-Based High-K Dielectric Films
    35.
    发明申请
    Titanium-Based High-K Dielectric Films 有权
    钛基高K介电薄膜

    公开(公告)号：US20100330269A1

    公开(公告)日：2010-12-30

    申请号：US12494702

    申请日：2009-06-30

    申请人： Hanhong Chen ,  Pragati Kumar ,  Sunil Shanker ,  Edward Haywood ,  Sandra Malhotra ,  Imran Hashim ,  Nobi Fuchigami ,  Prashant Phatak ,  Monica Mathur

    发明人： Hanhong Chen ,  Pragati Kumar ,  Sunil Shanker ,  Edward Haywood ,  Sandra Malhotra ,  Imran Hashim ,  Nobi Fuchigami ,  Prashant Phatak ,  Monica Mathur

    IPC分类号： B05D5/12

    CPC分类号： H01G4/1218 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/3142 ,  H01L28/40

    摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.

    摘要翻译： 本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。 使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于使用含酰胺的前体的TiO 2电介质。 在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。 进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。 该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

    Method for fabricating a DRAM capacitor
    36.
    发明授权
    Method for fabricating a DRAM capacitor 有权
    制造DRAM电容器的方法

    公开(公告)号：US08828836B2

    公开(公告)日：2014-09-09

    申请号：US13153626

    申请日：2011-06-06

    申请人： Karthik Ramani ,  Hiroyuki Ode ,  Sandra Malhotra

    发明人： Karthik Ramani ,  Hiroyuki Ode ,  Sandra Malhotra

    IPC分类号： H01L21/20 ,  H01L49/02 ,  H01L29/92

    CPC分类号： H01L28/40 ,  H01L28/60 ,  H01L28/65 ,  H01L29/92

    摘要： A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal. A dielectric layer is formed over the first electrode. The dielectric layer is subjected to a milliseconds anneal process that serves to crystallize the dielectric material and decrease the concentration of oxygen vacancies.

    摘要翻译： 公开了一种用于制造动态随机存取存储器（DRAM）电容器堆叠的方法，其中堆叠包括第一电极，电介质层和第二电极。 第一电极由导电二元金属形成。 在第一电极上形成电介质层。 对电介质层进行几毫秒的退火工艺，以使介电材料结晶并降低氧空位的浓度。

    METHOD OF FORMING AN ALD MATERIAL
    37.
    发明申请
    METHOD OF FORMING AN ALD MATERIAL 有权
    形成ALD材料的方法

    公开(公告)号：US20130143383A1

    公开(公告)日：2013-06-06

    申请号：US13310980

    申请日：2011-12-05

    申请人： Sandra Malhotra ,  Wim Deweerd ,  Edward Haywood ,  Hiroyuki Ode

    发明人： Sandra Malhotra ,  Wim Deweerd ,  Edward Haywood ,  Hiroyuki Ode

    IPC分类号： H01L21/02

    CPC分类号： C23C16/45534 ,  C23C16/405 ,  H01L21/28562 ,  H01L21/32051 ,  H01L28/60

    摘要： In some embodiments of the present invention, methods are developed wherein a gas flow of an electron donating compound (EDC) is introduced in sequence with a precursor pulse and alters the deposition of the precursor material. In some embodiments, the EDC pulse is introduced sequentially with the precursor pulse with a purge step used to remove the non-adsorbed EDC from the process chamber before the precursor is introduced. In some embodiments, the EDC pulse is introduced using a vapor draw technique or a bubbler technique. In some embodiments, the EDC pulse is introduced in the same gas distribution manifold as the precursor pulse. In some embodiments, the EDC pulse is introduced in a separate gas distribution manifold from the precursor pulse.

    摘要翻译： 在本发明的一些实施方案中，开发了方法，其中给电子化合物（EDC）的气流按前驱脉冲依次导入并改变前体材料的沉积。 在一些实施方案中，EDC脉冲依次与前体脉冲一起引入，其中吹扫步骤用于在引入前体之前从处理室去除未吸附的EDC。 在一些实施例中，使用蒸汽抽吸技术或起泡器技术引入EDC脉冲。 在一些实施例中，EDC脉冲被引入与前驱脉冲相同的气体分配歧管中。 在一些实施例中，EDC脉冲从前驱脉冲引入到单独的气体分配歧管中。

    Titanium-based high-K dielectric films
    38.
    发明授权
    Titanium-based high-K dielectric films 有权
    钛基高K电介质薄膜

    公开(公告)号：US08551851B2

    公开(公告)日：2013-10-08

    申请号：US13100538

    申请日：2011-05-04

    申请人： Hanhong Chen ,  Pragati Kumar ,  Sunil Shanker ,  Edward Haywood ,  Sandra Malhotra ,  Imran Hashim ,  Nobi Fuchigami ,  Prashant Phatak ,  Monica Mathur

    发明人： Hanhong Chen ,  Pragati Kumar ,  Sunil Shanker ,  Edward Haywood ,  Sandra Malhotra ,  Imran Hashim ,  Nobi Fuchigami ,  Prashant Phatak ,  Monica Mathur

    IPC分类号： H01L21/20

    CPC分类号： H01G4/1218 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/3142 ,  H01L28/40

    摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.

    摘要翻译： 本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。 使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于使用含酰胺的前体的TiO 2电介质。 在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。 进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。 该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

    FABRICATION OF SEMICONDUCTOR STACKS WITH RUTHENIUM-BASED MATERIALS
    39.
    发明申请
    FABRICATION OF SEMICONDUCTOR STACKS WITH RUTHENIUM-BASED MATERIALS 有权
    用基于金属的材料制造半导体堆叠

    公开(公告)号：US20120171839A1

    公开(公告)日：2012-07-05

    申请号：US13395071

    申请日：2009-09-18

    申请人： Hanhong Chen ,  Nobumichi Fuchigami ,  Imran Hashim ,  Pragati Kumar ,  Sandra Malhotra ,  Sunil Shanker

    发明人： Hanhong Chen ,  Nobumichi Fuchigami ,  Imran Hashim ,  Pragati Kumar ,  Sandra Malhotra ,  Sunil Shanker

    IPC分类号： H01L21/02

    CPC分类号： C23C16/45531 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/405 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02304 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/65 ,  H01L28/75

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device such as a capacitor and DRAM cell. In particular, a bottom electrode upon which a dielectric layer is to be grown may have a ruthenium-based surface. Lattice matching of the ruthenium surface with the dielectric layer (e.g., titanium oxide, strontium titanate or barium strontium titanate) helps promote the growth of rutile-phase titanium oxide, thereby leading to higher dielectric constant and lower effective oxide thickness. The ruthenium-based material also provides a high work function material, leading to lower leakage. To mitigate nucleation delay associated with the use of ruthenium, an adherence or glue layer based in titanium may be employed. A pretreatment process may be further employed so as to increase effective capacitor plate area, and thus promote even further improvements in dielectric constant and effective oxide thickness (“EOT”).

    摘要翻译： 本公开提供了制造半导体堆叠和相关设备（诸如电容器和DRAM单元）的方法。 特别地，要生长电介质层的底部电极可以具有钌基表面。 钌表面与电介质层的晶格匹配（例如氧化钛，钛酸锶钛酸钡或钛酸钡锶）​​有助于促进金红石相二氧化钛的生长，从而导致更高的介电常数和更低的有效氧化物厚度。 钌基材料还提供高功函数材料，导致较低的泄漏。 为了减轻与使用钌有关的成核延迟，可以采用基于钛的粘附层或胶层。 可以进一步采用预处理工艺，以增加有效的电容器板面积，从而进一步提高介电常数和有效的氧化物厚度（“EOT”）。