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公开(公告)号：US07897201B2
公开(公告)日：2011-03-01
申请号：US11703830
申请日：2007-02-08
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/303 , H01F41/325
摘要： A method is for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked. The method includes: forming at least a part of a magnetic layer that is to become either one of the magnetization fixed layer and the magnetization free layer; forming a function layer including at least one of an oxide, a nitride, and a fluoride on the part of the magnetic layer; and removing a part of the function layer by exposing the function layer to either one of an ion beam and plasma irradiation.
摘要翻译： 一种用于制造具有磁化固定层，非磁性中间层和顺序堆叠的无磁化层的磁阻效应元件的方法。 该方法包括：形成要成为磁化固定层和磁化自由层中的任一个的磁性层的至少一部分; 在所述磁性层的一部分上形成包括氧化物，氮化物和氟化物中的至少一种的功能层; 以及通过将功能层暴露于离子束和等离子体照射中的任一种来去除功能层的一部分。
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32.发明申请公开(公告)号：US20070223150A1
公开(公告)日：2007-09-27
申请号：US11546975
申请日：2006-10-13
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , G11B5/398 , G11B5/455 , G11C11/16 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.
摘要翻译： 磁阻效应元件包括：磁化固定层，包括具有大致沿一个方向固定的磁化方向的第一晶粒;布置在磁化固定层上并具有绝缘层和贯穿绝缘层的金属导体的间隔层; 以及包含第二晶粒的无磁化层，其布置在所述间隔层上以与所述金属导体相对并且具有对应于外部磁场变化的磁化方向。
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33.发明授权公开(公告)号：US08824108B2
公开(公告)日：2014-09-02
申请号：US13728281
申请日：2012-12-27
申请人： Yoshihiko Fuji , Michiko Hara , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Yoshihiko Fuji , Michiko Hara , Hideaki Fukuzawa , Hiromi Yuasa
CPC分类号： G11B5/1274 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3983 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.
摘要翻译： 根据一个实施例，磁阻效应元件包括：第一电极; 第二电极; 设置在第一和第二电极之间的第一磁性层; 设置在所述第一磁性层和所述第二电极之间的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的金属氧化物的氧化物层。 氧化物层包括具有含（111）面取向的方铁矿结构的方铁矿晶粒含铁。 方铁矿晶粒的（111）面的晶格间距不小于0.253纳米，不大于0.275纳米。
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34.发明授权公开(公告)号：US08130477B2
公开(公告)日：2012-03-06
申请号：US12879642
申请日：2010-09-10
IPC分类号： G11B5/36
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译： 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。
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公开(公告)号：US08111488B2
公开(公告)日：2012-02-07
申请号：US12155924
申请日：2008-06-11
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G11B5/39
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G01S7/032 , G01S13/34 , G01S2013/936 , G11B5/3903 , G11B5/398 , G11B5/66 , G11C11/16 , H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.
摘要翻译： 磁性多层膜电流元件包括：至少一个磁性层; 至少一个膜结构，其包含形成第一开口的第一绝缘层，形成第二开口的第二绝缘层和设置在第一绝缘层和第二绝缘层之间的导体，在距离“A” 在第一绝缘层和第二绝缘层的位于第二开口的位置处的第一绝缘层和第二绝缘层的一部分之间的距离设定为大于第一绝缘层和第二绝缘层之间的最近距离“B” 以及一对电极，用于沿着磁性多层膜的堆叠方向将电流流向含有至少一个磁性层和至少一个膜结构的磁性多层膜。
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公开(公告)号：US20100323104A1
公开(公告)日：2010-12-23
申请号：US12871593
申请日：2010-08-30
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
IPC分类号： B05D5/12
CPC分类号： G11B5/39 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An example method for manufacturing a magneto-resistance effect element involves irradiating inert gas ions to enhance an adhesive force between an area around an oxide layer and a metallic layer.
摘要翻译： 用于制造磁阻效应元件的示例性方法包括照射惰性气体离子以增强氧化物层和金属层周围的区域之间的粘合力。
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公开(公告)号：US07810228B2
公开(公告)日：2010-10-12
申请号：US11822435
申请日：2007-07-05
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
CPC分类号： G11B5/39 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An example method for manufacturing a magneto-resistance effect element involves irradiating inert gas ions to enhance an adhesive force between an area around an oxide layer and a metallic layer.
摘要翻译： 用于制造磁阻效应元件的示例性方法包括照射惰性气体离子以增强氧化物层和金属层周围的区域之间的粘合力。
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公开(公告)号：US09046549B2
公开(公告)日：2015-06-02
申请号：US13710718
申请日：2012-12-11
申请人： Yoshihiro Higashi , Michiko Hara , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Tomohiko Nagata
发明人： Yoshihiro Higashi , Michiko Hara , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Tomohiko Nagata
CPC分类号： G01R3/00 , A61B5/02141 , A61B2562/0247 , G01L1/125 , G01L9/0048 , G01L9/16 , Y10T29/49007
摘要： According to one embodiment, a method for manufacturing a pressure sensing device includes preparing a sensor unit and a mounting substrate. The sensor unit includes: a membrane body; and an element unit provided on the membrane body. The element unit includes: a first electrode; a second electrode; and a first magnetic layer provided between the first electrode and the second electrode and having magnetization in a first direction. The mounting substrate includes: a base; a first electrode pad provided on the base; and a second electrode pad provided on the base and provided apart from the first electrode pad. The method further includes joining the first electrode pad to the first electrode while heated, and joining the second electrode pad to the second electrode while heated, with an external magnetic field along the first direction applied to the sensor unit.
摘要翻译： 根据一个实施例，用于制造压力感测装置的方法包括制备传感器单元和安装基板。 传感器单元包括：膜体; 以及设置在膜体上的元件单元。 元件单元包括：第一电极; 第二电极; 以及设置在第一电极和第二电极之间并且在第一方向上具有磁化的第一磁性层。 安装基板包括：基座; 设置在基座上的第一电极焊盘; 以及设置在基座上并与第一电极焊盘分开设置的第二电极焊盘。 该方法还包括在加热时将第一电极焊盘接合到第一电极，并且在加热时将第二电极焊盘接合到第二电极，沿着施加到传感器单元的第一方向的外部磁场。
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公开(公告)号：US08973446B2
公开(公告)日：2015-03-10
申请号：US13730016
申请日：2012-12-28
申请人： Hideaki Fukuzawa , Akihiko Enamito , Osamu Nishimura , Michiko Hara , Hiromi Yuasa , Yoshihiko Fuji , Masayuki Kii , Eizo Fujisawa
发明人： Hideaki Fukuzawa , Akihiko Enamito , Osamu Nishimura , Michiko Hara , Hiromi Yuasa , Yoshihiko Fuji , Masayuki Kii , Eizo Fujisawa
摘要： According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.
摘要翻译： 根据一个实施例，压力传感器包括基座和第一传感器单元。 第一传感器单元包括第一换能器薄膜，第一应变感测装置和第二应变感测装置。 第一应变感测装置包括第一磁性层，第二磁性层和设置在第一和第二磁性层之间的第一中间层。 第二应变感测装置与第一膜表面上的第一应变感测装置分开设置，并且设置在与重心的位置不同的位置处，第二应变感测装置包括第三磁性层，第四磁性层和 第二中间层设置在第三和第四磁性层之间，第一和第二中间层是非磁性的。 第一和第二应变感测装置和重心处于直线。
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40.发明授权公开(公告)号：US08305716B2
公开(公告)日：2012-11-06
申请号：US13360143
申请日：2012-01-27
IPC分类号： G11B5/36
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： An example magneto-resistance effect element includes a magnetization layer and a free magnetization layer of which magnetization direction changes depending on an external magnetic field. A spacer layer is located between the magnetization layer and the free magnetization layer, and has an insulating layer and an electric conductor passing current therethrough in a layer direction of the insulating layer. A diffusive electron scattering layer is disposed on said free magnetization layer for scattering diffusive electrons. The scattering layer includes a first nonmagnetic layer and a second nonmagnetic layer containing a first element and a second element, respectively, and a mixing layer disposed at a boundary between the first and second nonmagnetic layers and containing the first and second elements. The mixing layer has a thickness of 0.5 nm or more and 1.5 nm or less.
摘要翻译： 示例性的磁阻效应元件包括磁化层和磁化方向根据外部磁场而变化的自由磁化层。 间隔层位于磁化层和自由磁化层之间，并且在绝缘层的层方向上具有绝缘层和导电体通过其中的电流。 漫射电子散射层设置在所述自由磁化层上用于散射漫射电子。 散射层包括分别包含第一元件和第二元件的第一非磁性层和第二非磁性层，以及设置在第一和第二非磁性层之间并且包含第一和第二元件的边界处的混合层。 混合层的厚度为0.5nm以上且1.5nm以下。
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