摘要:
The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of a control gate material, an interpoly dielectric film material, and a floating gate material, the difficulties accompanying a reduction in word line width. Further, the invention enables to avoid damage caused in the batch forming on a gate oxide film. Before forming floating gates of memory cells of a nonvolatile memory, a space enclosed by insulating layers is formed for each of the floating gates of the memory cells, so that the floating gate is buried in the space. This structure is realized by processing the floating gates in a self alignment manner after depositing the floating gate material. Therefore, it is unnecessary to perform the batch forming of the control gate material, the interpoly dielectric film material, and the floating gate material in the case of processing the control gates, thereby ensuring adequate interpoly dielectric film capacitance.
摘要:
To carry out frequency adjustment easily, accurately and efficiently and achieve low cost formation and promotion of maintenance performance without being influenced by a size of a piezoelectric vibrating piece, there is provided a method of fabricating a piezoelectric vibrating piece which is a method of fabricating a piezoelectric vibrating pieces having a piezoelectric plate 11, a pair of exciting electrodes 12, 13, and a pair of mount electrodes electrodes 15, 16 by utilizing a wafer S, the method including an outer shape forming step of forming a frame portion S1 at the wafer and forming a plurality of piezoelectric plates to be connected to the frame portion by way of a connecting portion 11a, an electrode forming step of respectively forming pairs of exciting electrodes and pairs of mount electrodes to the plurality of piezoelectric plates and forming a plurality of pairs of extended electrodes S2, S3 to be respectively electrically connected to the pairs of mount electrodes by way of the connecting portion, a frequency adjusting step of adjusting a frequency of the piezoelectric plate while applying a drive voltage between the pair of the extended electrodes, and a cutting step of fragmenting the plurality of piezoelectric plates.
摘要:
A work vehicle includes a traveling vehicle body and a hood provided at a front portion of the vehicle body for covering an engine room. The hood includes a front face having a plurality of first air vent holes and right and left side faces each having a plurality of second air vent holes. A radiator is mounted inside the hood, ambient air being drawn in through the first and second air vent holes toward the radiator. A vent hole area ratio of each side face of the hood determined by the second air vent holes is set smaller than a vent hole area ratio of the front face of the hood determined by the first air vent holes.
摘要:
A bobbin includes a reinforcing fiber bundle formed in a wound shape, and the reinforcing fiber bundle is formed of a plurality of filaments. The reinforcing fiber bundle includes a first twist having a first value T1 per unit length (turn/m) at a first distance r1 from a center axis of the bobbin, a second twist having a second value T2 per unit length (turn/m) at a second distance r2 from the center axis of the bobbin, and a third twist having a third value T3 per unit length (turn/m) at a third distance r3 from the center axis of the bobbin; said reinforcing fiber bundle is disposed so that the following relations are concurrently satisfied: |T1/2πr1|≧|T2/2πr2|≧|T3/2πr3| |T1/2πr1|>|T3/2πr3| |T1|≧|T2|≧|T3|≧0.5 where the first distance r1, the second distance r2, and the third distance r3 are different from each other (r1≠r2≠r3).
摘要:
A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.
摘要:
A plasma processing apparatus 100 of the RLSA type includes a planar antenna with a plurality of slots formed therein, by which microwaves are supplied into a process chamber to generate plasma. In this apparatus, poly-silicon oxidation is performed at a pressure of 67 to 667 Pa inside the chamber, a temperature of 300 to 600° C., and a microwave power of 1,000 to 3,500 W, while a process gas containing Ar gas at a rate of 100 to 2,000 mL/min and O2 gas at a rate of 1 to 500 mL/min is used with O2 gas/Ar gas ratio set to be 0.5 to 5%.
摘要:
An AC generator comprises a rotor and a stator having a three-phase winding. A three-phase inverter is connected to the three-phase winding. Here, the three-phase winding comprises at least two independent three-phase windings. Switching elements for respective phases of the three-phase inverter are connected in parallel by the number of the independent three-phase windings, and in-phase windings are individually connected to their parallel switching elements.
摘要:
Disclosed is a barrier film capable of maintaining a high water vapor barrier property when folded. The film is characterized in that it has a structure in which an easy adhesive layer, an organic layer and an inorganic layer are laminated in that order on one surface or both surfaces of a plastic film, wherein a center liner average roughness of the surface of the organic layer on the inorganic layer side is at least 0.5 nm, and the organic layer contains a resin which is obtained by curing an acrylic monomer having at least two acryloyl groups and at least two urethane groups in one molecule as a polymerizable component.
摘要:
A method of transporting precision equipment materials without absorption of thermal energy through the heat sensitive material or device such as flat panel displays. The transfer member has a carbon fiber reinforced composite material body with a layer of metal film on the top and bottom surfaces of the transfer member that provides a reflective surface. Flat panel displays, for example, release radiant thermal energy that is absorbed by the carbon fiber reinforced composite which is detrimental to the flat panel display. The reflective surface created by the metal film prevents the energy absorption by the carbon fiber reinforced composite. A glass fiber and epoxy layer on the metal film surface protects the metal film.
摘要:
The optically active compound (R)-2-amino-1,4-dihydro-6-methyl-4-(3-nitrophenyl)-3,5-pyridinedicarboxylic acid 3-(1-diphenylmethylazetidin-3-yl) ester 5-isopropyl ester or a pharmacologically acceptable salt thereof, and a method using the compound or its salt to treat circulatory diseases.