公开(公告)号：US07903709B2

公开(公告)日：2011-03-08

申请号：US12357282

申请日：2009-01-21

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20090185594A1

公开(公告)日：2009-07-23

申请号：US12357282

申请日：2009-01-21

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/026 ,  H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20090086783A1

公开(公告)日：2009-04-02

申请号：US12236616

申请日：2008-09-24

申请人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Shingo KAMEYAMA ,  Yasuhiko Nomura ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01S5/026

CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/0282

摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，其另一个面由（000

公开(公告)号：US20050141240A1

公开(公告)日：2005-06-30

申请号：US10953066

申请日：2004-09-30

申请人： Masayuki Hata ,  Ryoji Hiroyama ,  Tatsuya Kunisato ,  Keiichi Kuramoto ,  Hitoshi Hirano

发明人： Masayuki Hata ,  Ryoji Hiroyama ,  Tatsuya Kunisato ,  Keiichi Kuramoto ,  Hitoshi Hirano

IPC分类号： F21V7/00 ,  H01L33/22 ,  H01L33/32 ,  H01L33/48 ,  H01S5/00

CPC分类号： H01L33/58 ,  H01L33/44 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： A pre-curing viscous solution (precursor solution) is applied to the back surface of a substrate for forming an optically transparent layer principally composed of an inorganic material. The substrate is heated or irradiated with UV light while being pressed with unevenness of a mold. By removing the substrate from the mold, the optically transparent, inorganic material layer principally composed of the inorganic material is formed on the substrate. In this manner, the inorganic material layer with the unevenness is formed on the back surface of the substrate (a light extraction surface) by embossing.

摘要翻译： 将预固化粘性溶液（前体溶液）施加到用于形成主要由无机材料构成的光学透明层的基板的背面。 在用模具的不均匀性压制的同时，用UV光照射基板。 通过从模具中除去基材，在基材上形成主要由无机材料构成的光学透明的无机材料层。 以这种方式，通过压花在基板的背面（光提取面）上形成具有凹凸的无机材料层。

公开(公告)号：US20100189146A1

公开(公告)日：2010-07-29

申请号：US12693169

申请日：2010-01-25

申请人： Yasuyuki Bessho ,  Hiroki Ohbo ,  Kunio Takeuchi ,  Seiichi Tokunaga ,  Yasumitsu Kunoh ,  Masayuki Hata

发明人： Yasuyuki Bessho ,  Hiroki Ohbo ,  Kunio Takeuchi ,  Seiichi Tokunaga ,  Yasumitsu Kunoh ,  Masayuki Hata

IPC分类号： H01S5/02 ,  H01L33/00

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G11B7/1275 ,  G11B7/22 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/4087 ,  H04N9/3161 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：形成第一半导体激光器件衬底，其具有用于在其表面上切割的第一凹槽，将第二半导体激光器件衬底接合到具有第一沟槽的表面侧上，然后切割第一和第二 沿着至少第一凹槽的半导体激光器件衬底。

公开(公告)号：US08193016B2

公开(公告)日：2012-06-05

申请号：US12985632

申请日：2011-01-06

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20110210365A1

公开(公告)日：2011-09-01

申请号：US13105386

申请日：2011-05-11

申请人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata

发明人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata

IPC分类号： H01L33/58

CPC分类号： H01L33/025 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

摘要： A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在包括上表面，下表面和位错集中区域的基板的上表面上形成半导体器件层，以便将第一侧部分靠近上表面部分，以及 第二侧更靠近下表面，通过沿着位错集中区域的至少一部分去除第二侧的基板，在下表面上方露出位错集中区域不存在的部分，并且在第二侧上形成电极 一部分。

公开(公告)号：US20110104839A1

公开(公告)日：2011-05-05

申请号：US12985632

申请日：2011-01-06

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2201

摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。

公开(公告)号：US20100246624A1

公开(公告)日：2010-09-30

申请号：US12680412

申请日：2008-09-25

申请人： Ryoji Hiroyama ,  Yasuto Miyake ,  Yasumitsu Kuno ,  Yasuyuki Bessho ,  Masayuki Hata

发明人： Ryoji Hiroyama ,  Yasuto Miyake ,  Yasumitsu Kuno ,  Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/18 ,  H01L33/16 ,  H01L33/10 ,  H01L33/00 ,  H01L33/30 ,  H01S5/323 ,  H01S5/22

CPC分类号： H01S5/18 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/02208 ,  H01S5/0224 ,  H01S5/02252 ,  H01S5/02292 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/42

摘要： A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle θ1 (about) 62° with respect to the facet (50a).

摘要翻译： 可以获得能够抑制制造工序的复杂化和发光效率降低的氮化物系半导体发光装置。 该氮化物系半导体发光元件（50）具有形成在基板（（1）的（1-100）面的主面上的氮化物系半导体器件层，具有发光层 26），具有（1-100）面的主表面的小面（50a），形成在包括氮化物类半导体器件层（23）的发光层（26）的区域的一端的端部，由 （（1-100）面）的方向延伸的（000-1）面，以及形成在与该面相对的区域上的反射面（50c） 由所述氮化物基半导体器件层（23）的生长表面形成的所述（000-1）面的（50a），所述生长表面沿着相对于所述刻面以角度θ倾斜的方向（大约）62°延伸; （50a）。

公开(公告)号：US20090245310A1

公开(公告)日：2009-10-01

申请号：US12415647

申请日：2009-03-31

申请人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata ,  Yasumitsu Kuno

发明人： Yasuto Miyake ,  Ryoji Hiroyama ,  Masayuki Hata ,  Yasumitsu Kuno

IPC分类号： H01S5/323 ,  H01L21/18 ,  H01L21/50

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/185

摘要： A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.

摘要翻译： 氮化物系半导体激光装置包括形成在基板的主表面上并具有发光层的氮化物系半导体层，其中，所述氮化物系半导体层包括由（000-1）面形成的第一侧面和 相对于第一侧面倾斜的第二侧面，以及具有沿基板的主面的面内方向垂直于[0001]方向延伸的光波导的脊形成在保持在第一 侧表面和第二侧表面。