公开(公告)号：US20160141399A1

公开(公告)日：2016-05-19

申请号：US14935830

申请日：2015-11-09

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Schustereder

IPC: H01L29/739 ,  H01L21/66 ,  H01L21/265 ,  H01L21/324 ,  H01L29/36 ,  H01L29/10

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

Abstract: A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

Abstract translation: 一种用于形成半导体器件的方法包括将限定剂量的质子注入到半导体衬底中并根据定义的温度曲线回火半导体衬底。 取决于指示关于半导体衬底的至少一部分内的碳浓度的信息的碳相关参数来选择限定剂量的质子和限定的温度分布中的至少一个。

公开(公告)号：US09312120B2

公开(公告)日：2016-04-12

申请号：US14473890

申请日：2014-08-29

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Helmut Oefner

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/265 ,  H01L29/16 ,  H01L29/36 ,  H01L21/66

CPC classification number: H01L21/02008 ,  H01L21/0203 ,  H01L21/02436 ,  H01L21/26506 ,  H01L21/3225 ,  H01L21/324 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26 ,  H01L29/16 ,  H01L29/36

Abstract: A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment, creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer and forming oxygen precipitates in the second region by a second heat treatment.

Abstract translation: 公开了一种用于处理半导体本体的方法。 在一个实施例中，该方法包括通过第一热处理在与硅晶片的第一表面邻接的第一区域中减少硅晶片中的氧浓度，至少在邻近第二区域的第二区域中产生晶片的晶格中的空位 第一区域，通过经由第一表面将颗粒注入晶片中并通过第二热处理在第二区域中形成氧沉淀物。

公开(公告)号：US09245811B2

公开(公告)日：2016-01-26

申请号：US14454741

申请日：2014-08-08

Applicant: Infineon Technologies AG

Inventor： Reinhard Ploss ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC: H01L21/48 ,  H01L21/66 ,  H01L21/265 ,  H01L21/324 ,  H01L21/261 ,  H01L21/263 ,  H01L29/36 ,  H01L29/66

CPC classification number: H01L22/20 ,  H01L21/261 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/74 ,  H01L29/7813 ,  H01L29/8611 ,  H01L29/872

Abstract: A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors, and a neutron irradiation. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, a temperature of the thermal process, and an irradiation dose of the neutron irradiation.

Abstract translation: 公开了一种用于处理具有基本掺杂的半导体晶片的方法。 该方法包括确定基本掺杂的掺杂浓度，以及通过后掺杂来适应半导体晶片的基本掺杂。 后掺杂包括以下方法中的至少一种：用于产生氢诱导的供体的质子注入和随后的热处理以及中子照射。 在这种情况下，以下参数中的至少一个取决于所确定的碱性掺杂的掺杂浓度：质子注入的注入剂量，热处理的温度和中子照射的照射剂量。

公开(公告)号：US20220037165A1

公开(公告)日：2022-02-03

申请号：US17386699

申请日：2021-07-28

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Breymesser ,  Bernhard Goller ,  Matthias Kuenle ,  Helmut Oefner ,  Francisco Javier Santos Rodriguez ,  Stephan Voss

IPC: H01L21/324 ,  H01L21/265 ,  H01L21/78

Abstract: A method of forming a semiconductor device, including forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate, increasing the porosity of the first semiconductor layer, first annealing the first semiconductor layer at a temperature of at least 1050° C., forming a second semiconductor layer on the first semiconductor layer and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.

公开(公告)号：US10724149B2

公开(公告)日：2020-07-28

申请号：US16369419

申请日：2019-03-29

Applicant: Infineon Technologies AG

Inventor： Johannes Freund ,  Thomas Wuebben ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC: C30B15/04 ,  C30B15/02 ,  B28D5/00 ,  H01L29/739 ,  C30B15/10 ,  C30B29/06 ,  C30B33/00 ,  B28D5/04 ,  H01L21/66 ,  H01L29/66

Abstract: In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

公开(公告)号：US20190249330A1

公开(公告)日：2019-08-15

申请号：US16369419

申请日：2019-03-29

Applicant: Infineon Technologies AG

Inventor： Johannes Freund ,  Thomas Wuebben ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC: C30B15/04 ,  C30B15/02 ,  B28D5/00 ,  H01L29/739 ,  B28D5/04 ,  H01L29/66 ,  H01L21/66

Abstract: In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

公开(公告)号：US10319599B2

公开(公告)日：2019-06-11

申请号：US15609438

申请日：2017-05-31

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Helmut Oefner ,  Roland Rupp

IPC: H01L21/428 ,  H01L21/321 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L29/16 ,  B05D3/04 ,  C30B25/18 ,  C30B33/12 ,  C30B31/22 ,  H01L21/425

Abstract: A method of planarizing a roughened surface of a SiC substrate includes: forming a sacrificial material on the roughened surface of the SiC substrate, the sacrificial material having a density between 35% and 120% of the density of the SiC substrate; implanting ions through the sacrificial material and into the roughened surface of the SiC substrate to form an amorphous region in the SiC substrate; and removing the sacrificial material and the amorphous region of the SiC substrate by wet etching.

公开(公告)号：US10317338B2

公开(公告)日：2019-06-11

申请号：US15716598

申请日：2017-09-27

Applicant: Infineon Technologies AG

Inventor： Naveen Goud Ganagona ,  Moriz Jelinek ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: G01N21/3563 ,  G01N21/35

Abstract: A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. The method may further include: determining a quantity indicative of the content of the generated polyatomic complexes in the silicon sample, and determining the carbon content in the silicon sample from the determined quantity.

公开(公告)号：US10273597B2

公开(公告)日：2019-04-30

申请号：US15636926

申请日：2017-06-29

Applicant: Infineon Technologies AG

Inventor： Johannes Freund ,  Thomas Wuebben ,  Helmut Oefner ,  Hans-Joachim Schulze

IPC: C30B15/04 ,  H01L29/66 ,  B28D5/04 ,  B28D5/00 ,  C30B15/02 ,  H01L21/66 ,  H01L29/739

Abstract: In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

公开(公告)号：US10026816B2

公开(公告)日：2018-07-17

申请号：US14672783

申请日：2015-03-30

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Helmut Oefner

IPC: H01L29/36 ,  H01L21/223 ,  C30B33/00 ,  C30B29/06 ,  C30B31/06 ,  H01L21/02

Abstract: A semiconductor wafer includes first and second main surfaces opposite to each other along a vertical direction, and a side surface encircling the semiconductor wafer. A lateral distance perpendicular to the vertical direction between the side surface and a center of the semiconductor wafer includes first and second parts. The first part extends from the side surface to the second part and the second part extends from the first part to the center. An average concentration of at least one of nitrogen and oxygen in the first part is greater than 5×1014 cm−3 and exceeds an average concentration of the at least one of nitrogen and oxygen in the second part by more than 20% of the average concentration of the at least one of nitrogen and oxygen in the second part.