公开(公告)号：US09853210B2

公开(公告)日：2017-12-26

申请号：US14943247

申请日：2015-11-17

Applicant: International Business Machines Corporation

Inventor： Anthony J. Annunziata ,  Gen P. Lauer ,  Nathan P. Marchack ,  Stephen M. Rossnagel

IPC: H01L43/12

CPC classification number: H01L43/12

Abstract: A method of making a magnetic random access memory (MRAM) device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer positioned in contact with the electrode, a free layer, and a tunnel barrier layer arranged between the reference layer and the free layer; and depositing an encapsulating layer on and along sidewalls of the MTJ by physical sputtering or ablation of a target material onto the MTJ.

公开(公告)号：US20170222130A1

公开(公告)日：2017-08-03

申请号：US15487964

申请日：2017-04-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony J. Annunziata ,  Gen P. Lauer ,  Nathan P. Marchack

IPC: H01L43/02 ,  H01L43/12 ,  G11C11/16 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device includes a magnetic memory stack including a bottom electrode and having a hard mask formed thereon. An encapsulation layer is formed over sides of the magnetic memory stack and has a thickness adjacent to the sides formed on the bottom electrode. A dielectric material is formed over the encapsulation layer and is removed from over the hard mask and gapped apart from the encapsulation layer on the sides of the magnetic memory stack to form trenches between the dielectric material and the encapsulation layer at the sides of the magnetic memory stack. A top electrode is formed over the hard mask and in the trenches such that the top electrode is spaced apart from the bottom electrode by at least the thickness.

公开(公告)号：US09673386B2

公开(公告)日：2017-06-06

申请号：US15202821

申请日：2016-07-06

Applicant: International Business Machines Corporation

Inventor： Anthony J. Annunziata ,  Gen P. Lauer ,  Nathan P. Marchack

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of making a magnetic random access memory (MRAM) device includes depositing a spacer material on an electrode; forming a magnetic tunnel junction (MTJ) on the spacer material that includes a reference layer in contact with the spacer material, a free layer, and a tunnel barrier layer; patterning a hard mask on the free layer; etching the MTJ and the spacer material to transfer a pattern of the hard mask into the MTJ and the spacer material; forming an insulating layer along a sidewall of the hard mask, the MTJ, and the spacer material; disposing an interlayer dielectric (ILD) on and around the hard mask, MTJ, and spacer material; etching through the ILD to form a trench that extends to a surface and sidewall of the hard mask and a sidewall of a portion of the MTJ; and disposing a metal in the trench to form a contact electrode.

公开(公告)号：US20170062707A1

公开(公告)日：2017-03-02

申请号：US15184109

申请日：2016-06-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony J. Annunziata ,  Armand A. Galan ,  Steve Holmes ,  Eric A. Joseph ,  Gen P. Lauer ,  Qinghuang Lin ,  Nathan P. Marchack

IPC: H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/12 ,  G03F7/70325 ,  G03F7/70425 ,  G11C11/161 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

Abstract translation: 磁阻存储单元包括具有圆形横截面的磁隧道连接柱。 该柱具有钉扎磁性层，隧道势垒层和自由磁性层。 第一导电触点设置在磁隧道结柱的上方。 第二导电触点设置在磁隧道结柱的下方。

公开(公告)号：US09515252B1

公开(公告)日：2016-12-06

申请号：US14983015

申请日：2015-12-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Samsung Electronics Co., Ltd.

Inventor： Anthony J. Annunziata ,  Chandrasekaran Kothandaraman ,  Gen P. Lauer ,  JungHyuk Lee ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Eugene J. O'Sullivan ,  Jeong-Heon Park

IPC: H01L27/00 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1677 ,  H01L27/22 ,  H01L27/222 ,  H01L43/02 ,  H01L43/12

Abstract: A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed.

Abstract translation: 一种制造磁性随机存取存储器（MRAM）装置的方法，包括在电极上形成磁性隧道结，所述磁性隧道结包括第一参考层，自由层和第一隧道势垒层; 以及在所述磁性隧道结的侧壁上并沿着所述磁性隧道结的侧壁沉积封装的氮化硅膜; 其中氮化硅膜具有0.1:1的N:Si比率。还公开了通过上述方法制造的MRAM器件。

公开(公告)号：US12063867B2

公开(公告)日：2024-08-13

申请号：US17394752

申请日：2021-08-05

Applicant: International Business Machines Corporation

Inventor： Pouya Hashemi ,  Chandrasekharan Kothandaraman ,  Nathan P. Marchack

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85 ,  G11C11/161

Abstract: An approach to provide a structure of a double magnetic tunnel junction device with two spacers that includes a bottom magnetic tunnel junction stack, a spin conducting layer on the bottom magnetic tunnel junction stack, a top magnetic tunnel junction stack on the spin conduction layer, a first dielectric spacer on sides of the top magnetic tunnel junction stack and a portion of a top surface of the spin conduction layer, and a second dielectric spacer on the first spacer. The double magnetic tunnel device includes the top magnetic tunnel junction stack with a width that is less than the width of the bottom magnetic tunnel junction stack.

公开(公告)号：US11502243B2

公开(公告)日：2022-11-15

申请号：US17135277

申请日：2020-12-28

Applicant: International Business Machines Corporation

Inventor： Nathan P. Marchack ,  Bruce B. Doris

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  G11B5/39 ,  G01R33/09

Abstract: A magnetic tunnel junction (MTJ) containing device is provided that includes an undercut conductive pedestal structure having a concave sidewall positioned between a bottom electrode and a MTJ pillar. The geometric nature of such a conductive pedestal structure makes the pedestal structure unlikely to be resputtered and deposited on a sidewall of the MTJ pillar, especially the sidewall of the tunnel barrier of the MTJ pillar. Thus, electrical shorts caused by depositing resputtered conductive metal particles on the sidewall of the tunnel barrier of the MTJ pillar are substantially reduced.

公开(公告)号：US11270893B2

公开(公告)日：2022-03-08

申请号：US16378072

申请日：2019-04-08

Applicant: International Business Machines Corporation

Inventor： John M. Papalia ,  Hiroyuki Miyazoe ,  Nathan P. Marchack ,  Sebastian Ulrich Engelmann

IPC: H01L21/3213 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/67 ,  H01L29/40 ,  H01L21/768

Abstract: A method for etching a poly-granular metal-based film includes providing a flow of a background gas in a plasma etching chamber containing a semiconductor structure including the poly-granular metal-based film formed over a substrate with a mask patterned over the poly-granular metal-based film. The method also includes applying a source power to generate a background plasma from the background gas, and providing a flow of a modifying gas while maintaining the flow of the background gas to generate a modifying plasma that produces a surface modification region with a substantially uniform depth in the top surface of the poly-granular metal-based film exposed by the mask. The method further includes stopping the flow of the modifying gas while maintaining the flow of the background gas, and applying a biasing power to the substrate to remove the surface modification region.

公开(公告)号：US11013908B2

公开(公告)日：2021-05-25

申请号：US16691993

申请日：2019-11-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Steven J. Holmes ,  Qinghuang Lin ,  Emily R. Kinser ,  Nathan P. Marchack ,  Roy R. Yu

IPC: A61N1/04 ,  A61K38/18 ,  A61B5/00 ,  B82Y15/00 ,  A61N1/375 ,  A61N1/05 ,  A61N1/08

Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.

公开(公告)号：US20210151503A1

公开(公告)日：2021-05-20

申请号：US17136648

申请日：2020-12-29

Applicant: International Business Machines Corporation

Inventor： Pouya Hashemi ,  Bruce B.` Doris ,  Chandrasekharan Kothandaraman ,  Nathan P. Marchack

IPC: H01L27/22 ,  H01L43/12

Abstract: A semiconductor structure and fabrication method of forming a semiconductor structure. The structure is a MRAM element having a first conductive electrode embedded in a first interconnect dielectric material layer upon which a multi-layered magnetic tunnel junction (MTJ) memory element is formed in a magnetoresistive random access memory (MRAM) device area. The first conductive electrode includes a first end having a top surface of a first surface area and a second end having a bottom surface of a second surface area, the first surface area being smaller than the second surface area. The second end of the bottom electrode includes a barrier liner material including a metal fill material, and the first end of the bottom electrode is a pillar structure formed as a result of an etchback process in which the metal barrier liner is recessed relative to the metal fill material.