公开(公告)号：US20050070063A1

公开(公告)日：2005-03-31

申请号：US10793818

申请日：2004-03-08

申请人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

发明人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

IPC分类号： C23C16/40 ,  C23C16/455 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.

摘要翻译： 公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地HfO 2电介质层的方法，其中在下一个中间层之前形成一系列薄的中间层并用一种或多种氧化剂和氮化物进行处理 形成在基板上。 中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。 如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能 材料

公开(公告)号：US20130048954A1

公开(公告)日：2013-02-28

申请号：US13426838

申请日：2012-03-22

申请人： Seung-Hwan Lee

发明人： Seung-Hwan Lee

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3211 ,  H01L27/3244 ,  H01L51/5221 ,  H01L51/56

摘要： An organic electro-luminescence display panel and a method for fabricating the same is described which can prevent the display panel from degrading. The organic electro-luminescence display panel includes a drive thin film transistor formed on a substrate, a first electrode connected to the drive thin film transistor, a bank insulating film having a bank hole formed therein for exposing the first electrode, organic common layers having a plurality of common layers stacked in the bank hole, and a second electrode formed on the organic common layers, wherein the plurality of organic common layers are have stacked positions different from one another such that their side edges form a stair shape on both sides.

摘要翻译： 对有机电致发光显示面板及其制造方法进行说明，能够防止显示面板的劣化。 有机电致发光显示面板包括形成在基板上的驱动薄膜晶体管，连接到驱动薄膜晶体管的第一电极，具有形成在其中的用于暴露第一电极的堤孔的堤绝缘膜，具有 多个公共层堆叠在堤孔中，第二电极形成在有机共用层上，其中多个有机共用层具有彼此不同的堆叠位置，使得它们的侧边在两侧形成阶梯形状。

公开(公告)号：US20110183692A1

公开(公告)日：2011-07-28

申请号：US13057581

申请日：2009-08-04

申请人： Yong Hwan Lee ,  Seung-Hwan Lee

发明人： Yong Hwan Lee ,  Seung-Hwan Lee

IPC分类号： H04B15/00 ,  H04B7/26

CPC分类号： H04B17/345

摘要： The present invention relates to an apparatus for removing interference between neighbor cells in a radio communication system, and to a method for same. The apparatus according to the present invention includes a receiving unit which receives receiving power information and signal-to-noise ratio information of a neighbor cell base station from multiple receiving antennas, a first determination unit for determining the number of major neighbor cell interference signals by using the received receiving power information and the signal-to-noise ratio information, a second determination unit for determining a candidate signal vector of a target signal in accordance with the determined number of major neighbor cell interference signals, the received signal-to-noise ratio, and the number of the multiple receiving antennas, a third determination unit for determining a candidate signal matrix of the major neighbor cell interference signals on the basis of the determined candidate signal vector of the target signal, and an estimation unit for estimating signals transmitted from the target base station or the neighbor base station by applying the determined candidate signal matrix of the major neighbor cell interference signals to the method of maximum likelihood. Whereby, the present invention removes interference between neighbor cells in an efficient manner, maintains the performance thereof, and reduces complexity at the receiving end.

摘要翻译： 本发明涉及一种用于消除无线电通信系统中的相邻小区之间的干扰的装置及其方法。 根据本发明的装置包括：接收单元，其从多个接收天线接收相邻小区基站的接收功率信息和信噪比信息;第一确定单元，用于通过以下步骤确定主相邻小区干扰信号的数量： 使用接收到的接收功率信息和信噪比信息，第二确定单元，用于根据所确定的主要相邻小区干扰信号的数量确定目标信号的候选信号矢量，所接收的信号与噪声 比率和多个接收天线的数量，第三确定单元，用于基于所确定的目标信号的候选信号矢量来确定主相邻小区干扰信号的候选信号矩阵;以及估计单元，用于估计发送的信号 从目标基站或相邻基站通过应用 确定主要相邻小区干扰信号的候选信号矩阵为最大似然方法。 由此，本发明以有效的方式去除相邻小区之间的干扰，保持其性能，并降低接收端的复杂度。

公开(公告)号：US07927950B2

公开(公告)日：2011-04-19

申请号：US11672916

申请日：2007-02-08

申请人： Han-Mei Choi ,  Chang-Hyun Lee ,  Seung-Hwan Lee ,  Young-Geun Park ,  Sung-Jung Kim ,  Young-Sun Kim

发明人： Han-Mei Choi ,  Chang-Hyun Lee ,  Seung-Hwan Lee ,  Young-Geun Park ,  Sung-Jung Kim ,  Young-Sun Kim

IPC分类号： H01L21/336

CPC分类号： H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11568 ,  H01L27/11573

摘要： A method of fabricating a floating trap type nonvolatile memory device includes forming a cell gate insulating layer on a semiconductor substrate, the cell gate insulating layer being comprised of a lower insulating layer, a charge storage layer and an upper insulating layer sequentially stacked; thermally annealing the cell gate insulating Layer at a temperature of approximately 810° C. to approximately 1370° C.; and forming a gate electrode on the thermally annealed cell gate insulating layer.

摘要翻译： 一种制造浮动阱型非易失性存储器件的方法包括：在半导体衬底上形成单元栅极绝缘层，所述栅极绝缘层由下层绝缘层，电荷存储层和上部绝缘层构成; 在大约810℃至大约137​​0℃的温度下对单元栅极绝缘层进行热退火; 以及在所述热退火单元栅极绝缘层上形成栅电极。

公开(公告)号：US20100266056A1

公开(公告)日：2010-10-21

申请号：US12562231

申请日：2009-09-18

申请人： Seung-Hwan Lee ,  Jin Up Kim

发明人： Seung-Hwan Lee ,  Jin Up Kim

IPC分类号： H04L27/28

CPC分类号： H04B7/0452

摘要： A multi-user scheduling method and apparatus in a Multiple-Input Multiple-Output (MIMO) system are disclosed. The multi-user scheduling method includes calculating a valid channel norm based on statistical characteristics of a channel for every user terminal, selecting a user set that maximizes the sum of valid channel norms and that includes as many user terminals as data are transmittable to simultaneously, and precoding transmission signals for the user terminals included in the user set according to a predetermined scheme. According to the present invention, the volume of computation required for multi-user selection is reduced greatly, thus making real-time implementation possible.

摘要翻译： 公开了一种多输入多输出（MIMO）系统中的多用户调度方法和装置。 多用户调度方法包括基于每个用户终端的信道的统计特性来计算有效信道范数，选择使有效信道范数的和最大化的用户集合，并且包括尽可能多的用户终端同时传送数据， 以及根据预定方案对包括在用户组中的用户终端的发送信号进行预编码。 根据本发明，多用户选择所需的计算量大大降低，从而使得实时实现成为可能。

公开(公告)号：US20100225843A1

公开(公告)日：2010-09-09

申请号：US11640346

申请日：2006-12-18

申请人： Seung-Hwan Lee

发明人： Seung-Hwan Lee

IPC分类号： G02F1/1333

CPC分类号： G02F1/133608 ,  G02F2001/133314

摘要： A liquid crystal display (LCD) device includes an LCD panel to display images, a backlight unit to supply light to the LCD panel, a frame provided with an inverter to supply an alternating current of a high voltage to the lamp, and an inverter cover engaged with the frame to receive the inverter.

摘要翻译： 液晶显示器（LCD）装置包括用于显示图像的LCD面板，向LCD面板提供光的背光单元，设置有逆变器的框架，用于向灯提供高电压的交流电流，以及逆变器盖 与框架接合以接收变频器。

公开(公告)号：US07714394B2

公开(公告)日：2010-05-11

申请号：US11285978

申请日：2005-11-23

申请人： Dong-Suk Shin ,  Hwa-Sung Rhee ,  Tetsuji Ueno ,  Ho Lee ,  Seung-Hwan Lee

发明人： Dong-Suk Shin ,  Hwa-Sung Rhee ,  Tetsuji Ueno ,  Ho Lee ,  Seung-Hwan Lee

IPC分类号： H01L23/58

CPC分类号： H01L29/7834 ,  H01L21/265 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66628

摘要： A Complementary Metal Oxide Semiconductor (CMOS) device is provided. The CMOS device includes an isolation layer provided in a semiconductor substrate to define first and second active regions. First and second gate patterns are disposed to cross over the first and second active regions, respectively. A first elevated source region and a first elevated drain region are disposed at both sides of the first gate pattern respectively, and a second elevated source region and a second elevated drain region are disposed at both sides of the second gate pattern respectively. The first elevated source/drain regions are provided on the first active region, and the second elevated source/drain regions are provided on the second active region. A first gate spacer is provided between the first gate pattern and the first elevated source/drain regions. A second gate spacer is provided to cover edges of the second elevated source/drain regions adjacent to the second gate pattern and an upper sidewall of the second gate pattern. Methods of fabricating the CMOS device is also provided.

摘要翻译： 提供互补金属氧化物半导体（CMOS）器件。 CMOS器件包括设置在半导体衬底中以限定第一和第二有源区的隔离层。 第一和第二栅极图案分别设置成跨越第一和第二有源区域。 第一升高的源极区域和第一升高的漏极区域分别设置在第一栅极图案的两侧，并且第二升高的源极区域和第二升高的漏极区域分别设置在第二栅极图案的两侧。 第一升高的源极/漏极区域设置在第一有源区上，而第二升高的源极/漏极区域设置在第二有源区域上。 在第一栅极图案和第一升高的源极/漏极区域之间提供第一栅极间隔物。 设置第二栅极间隔物以覆盖与第二栅极图案相邻的第二升高的源极/漏极区域和第二栅极图案的上侧壁的边缘。 还提供了制造CMOS器件的方法。

公开(公告)号：US07646056B2

公开(公告)日：2010-01-12

申请号：US11375762

申请日：2006-03-15

申请人： Han-Mei Choi ,  Kyoung-Ryul Yoon ,  Seung-Hwan Lee ,  Ki-Yeon Park ,  Young-Sun Kim

发明人： Han-Mei Choi ,  Kyoung-Ryul Yoon ,  Seung-Hwan Lee ,  Ki-Yeon Park ,  Young-Sun Kim

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L29/513

摘要： In a gate structure of a non-volatile memory device is formed, a tunnel insulating layer and a charge trapping layer are formed on a substrate. A composite dielectric layer is formed on the charge trapping layer and has a laminate structure in which first material layers including aluminum oxide and second material layers including hafnium oxide or zirconium oxide are alternately stacked. A conductive layer is formed on the composite dielectric layer and then a gate structure is formed by patterning the conductive layer, the composite dielectric layer, the charge trapping layer, and the tunnel insulating layer.

摘要翻译： 在形成非易失性存储器件的栅极结构中，在衬底上形成隧道绝缘层和电荷俘获层。 在电荷捕获层上形成复合电介质层，并且具有层叠结构，其中包括氧化铝的第一材料层和包括氧化铪或氧化锆的第二材料层交替堆叠。 在复合电介质层上形成导电层，然后通过图案化导电层，复合介电层，电荷俘获层和隧道绝缘层形成栅极结构。

公开(公告)号：US07566608B2

公开(公告)日：2009-07-28

申请号：US11285555

申请日：2005-11-22

申请人： Dae-Sik Choi ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Seung-Hwan Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

发明人： Dae-Sik Choi ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Seung-Hwan Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

IPC分类号： H01L21/8238

CPC分类号： H01L21/02205 ,  C23C16/405 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/11521 ,  H01L29/4933 ,  H01L29/517 ,  H01L29/78

摘要： Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C2H5)(CH3)}4], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C2H5)(CH3)}4], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.

摘要翻译： 通过供应四（乙基甲基氨基）锆（[Zr（N（C 2 H 5）（CH 3）} 4]，TEMAZ）和四（乙基甲基氨基）铪（[Hf（N（C 2 H 5））的方式在半导体衬底上形成氧化锆铪薄膜 ）（CH 3）} 4]，TEMAH）。 TEMAZ和TEMAH可与氧化剂反应。 包括氧化铪的薄层可以用于栅极结构中的栅极绝缘层，电容器中的电介质层或闪存器件中的介电层。

公开(公告)号：US07561636B2

公开(公告)日：2009-07-14

申请号：US11126322

申请日：2005-05-11

申请人： Yoo-Seung Song ,  Jae-Hyok Lee ,  Seung-Hwan Lee ,  Ki-Hwan Hwang ,  Jae-Ho Jeon ,  Seung-Joo Maeng

发明人： Yoo-Seung Song ,  Jae-Hyok Lee ,  Seung-Hwan Lee ,  Ki-Hwan Hwang ,  Jae-Ho Jeon ,  Seung-Joo Maeng

IPC分类号： H04L25/49 ,  H04B1/04

CPC分类号： H03F1/3247

摘要： A digital predistortion apparatus is provided for predistorting a nonlinear characteristic caused by a wideband power amplifier that amplifies a input signal. The digital predistortion apparatus includes a predistorter, connected to the power amplifier via a digital-to-analog converter (DAC) and a frequency up-converter, for receiving the input signal and compensating for the nonlinear characteristic using a look-up table that depends upon a change in output power of the power amplifier. The digital predistortion apparatus further includes look-up table (LUT) updating block for adaptively updating the look-up table by comparing a feedback signal output from the power amplifier, connected thereto via an analog-to-digital converter (ADC), with the input signal output from the predistorter.

摘要翻译： 提供一种用于预失真由放大输入信号的宽带功率放大器引起的非线性特性的数字预失真装置。 数字预失真装置包括一个预失真器，它通过一个数/模转换器（DAC）和一个上变频器连接到功率放大器，用于接收输入信号，并使用一个查找表来补偿非线性特性 在功率放大器的输出功率变化时。 数字预失真装置还包括查找表（LUT）更新块，用于通过将经由模数转换器（ADC）连接到其的功率放大器输出的反馈信号与自动更新查找表与 来自预失真器的输入信号输出。